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Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2023-04, Vol.70 (4), p.291-301

2023

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A GaN–SiC hybrid material for high-frequency and power electronics

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

IEEE electron device letters, 2020-06, Vol.41 (6), p.828-831

2020

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High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a "Buffer-Free" Heterostructure

IEEE electron device letters, 2022-05, Vol.43 (5), p.781-784

2022

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Polarity Control by Inversion Domain Suppression in N‑Polar III-Nitride Heterostructures

Crystal growth & design, 2023-02, Vol.23 (2), p.1049-1056

2023

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Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8)

2023

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Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Applied physics letters, 2019-11, Vol.115 (22)

2019

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Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2162-2169

2015

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Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2024, Vol.71 (6), p.3596-3602

2024

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Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-6

2023

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Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.2910-2915

2019

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Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Materials, 2024-07, Vol.17 (13), p.3343

2024

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N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

Physica. B, Condensed matter, 2020-03, Vol.580, p.411819, Article 411819

2020

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Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

Journal of applied physics, 2015-02, Vol.117 (8)

2015

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Observations of very fast electron traps at SiC/high-κ dielectric interfaces

APL materials, 2023-11, Vol.11 (11), p.111121-111121-7

2023

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Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Applied physics letters, 2012-11, Vol.101 (19)

2012

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Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect

Physica status solidi. C, 2016-05, Vol.13 (5-6), p.369-373

2016

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Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2446-2453

2018

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High-quality N-polar GaN optimization by multi-step temperature growth process

Journal of crystal growth, 2023-02, Vol.603, p.127002, Article 127002

2023

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Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Semiconductor science and technology, 2023-10, Vol.38 (10), p.105006

2023

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On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

Journal of applied physics, 2022-02, Vol.131 (5)

2022

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Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Applied physics letters, 2015-06, Vol.106 (25)

2015

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A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95019

2018

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Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform

A GaN–SiC hybrid material for high-frequency and power electronics

Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a "Buffer-Free" Heterostructure

Polarity Control by Inversion Domain Suppression in N‑Polar III-Nitride Heterostructures

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers

High-quality N-polar GaN optimization by multi-step temperature growth process

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

Room-temperature mobility above 2200 cm{sup 2}/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

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