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Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

IEEE electron device letters, 2001-04, Vol.22 (4), p.176-178

2001

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IEEE_Xplore

Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Applied physics letters, 2000-10, Vol.77 (16), p.2560-2562

2000

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Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Applied physics letters, 2000-11, Vol.77 (22), p.3601-3603

2000

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Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Applied surface science, 2001-12, Vol.184 (1), p.399-403

2001

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Effect of annealing and plasma precleaning on the electrical properties of N2O/SiH4 PECVD oxide as gate material in MOSFETs and CCDs

Solid-state electronics, 1993-07, Vol.36 (7), p.1021-1026

1993

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Silicon wafer cleaning with CF4/H2 plasma and its effect on the properties of dry thermally grown oxide

Solid-state electronics, 1992-10, Vol.35 (10), p.1417-1421

1992

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Study of electrical properties of SiO2 grown over plasma-cleaned silicon surfaces

Solid-state electronics, 1991-12, Vol.34 (12), p.1463-1465

1991

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Effect of low and high temperature annealing on the electrical properties of pure N2O/SiH4 PECVD SiO2 deposited at a high rate

International journal of electronics, 1996-04, Vol.80 (4), p.525-532

1996

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Fowler-Nordheim emission and electron trapping in pure N2O/SiH4 PECVD oxide deposited on N2, H2 and O2 plasma precleaned Si wafers

Solid-state electronics, 1994-09, Vol.37 (9), p.1671-1672

1994

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Electrical properties of 6.3 nm RF oxygen plasma oxide grown near room temperature with in situ dry cleaning of Si surface

Solid-state electronics, 1995-05, Vol.38 (5), p.1075-1080

1995

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Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Materials science forum, 2002-04, Vol.389-393, p.967-972

2002

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Passivation of the 4H-SiC/SiO sub 2 interface with nitric oxide

Materials science forum, 2001-10, Vol.389-393 (2), p.967-972

2001

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Dry cleaning by atomic F of a Si surface placed vertical and floating in a high pressure plasma created in a barrel reactor

IEEE Conference Record - Abstracts. 1996 IEEE International Conference on Plasma Science, 1996, p.282

1996

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IEEE_Xplore

Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

MRS proceedings, 2000, Vol.640, Article H3.5

2000

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Bonding, Defects, And Defect Dynamics In The Sic-SiO 2 System

MRS proceedings, 2000, Vol.640, Article H3.3

2000

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Bonding, Defects, And Defect Dynamics In The Sic-SiO2 System

MRS proceedings, 2000, Vol.640

2000

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Electrical properties of 6.3 nm RF oxygen plasma oxide grown near room temperature with in situ cleaning of Si surface

Solid-state electronics, 1995, Vol.38 (5), p.1075-1080

1995

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Effect of low and high temperature annealing on the electrical properties of pure N 2 O/SiH 4 PECVD SiO 2 deposited at a high rate

International journal of electronics, 1996-04, Vol.80 (4), p.525-532

1996

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Silicon wafer cleaning with CF sub(4)/H sub(2) plasma and its effect on the properties of dry thermally grown oxide

Solid-state electronics, 1992-01, Vol.35 (10), p.1417-1421

1992

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Effect of different surfaces on plasma stripping of photoresist

Microelectronics, 1991, Vol.22 (3), p.53-57

1991

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Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells

Applied physics letters, 2017-08, Vol.111 (7)

2017

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Outcomes of gemcitabine-docetaxel as second-line chemotherapy in patients of advanced soft tissue sarcoma: A retrospective analysis

Annals of oncology, 2018-11, Vol.29, p.ix128-ix128

2018

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Efficacy and Safety of Ivabradine Once-Daily Prolonged-Release versus Twice-Daily Immediate-Release Formulation in Patients with Stable Chronic Heart Failure with Systolic Dysfunction: A Randomized, Double-Blind, Phase 3 Non-Inferiority (PROFICIENT) Study

Cardiology and Therapy, 2020-12, Vol.9 (2), p.505-521

Mullasari, Ajit

2020

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Ayurgenomics for stratified medicine: TRISUTRA consortium initiative across ethnically and geographically diverse Indian populations

Journal of ethnopharmacology, 2017-02, Vol.197, p.274-293

2017

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QOL analysis of a phase II randomized controlled clinical trial comparing efficacy of cabazitaxel versus docetaxel as second line or above therapy in recurrent head and neck cancer

Annals of oncology, 2017-11, Vol.28, p.x102-x102

2017

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Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Effect of annealing and plasma precleaning on the electrical properties of N2O/SiH4 PECVD oxide as gate material in MOSFETs and CCDs

Silicon wafer cleaning with CF4/H2 plasma and its effect on the properties of dry thermally grown oxide

Study of electrical properties of SiO2 grown over plasma-cleaned silicon surfaces

Effect of low and high temperature annealing on the electrical properties of pure N2O/SiH4 PECVD SiO2 deposited at a high rate

Fowler-Nordheim emission and electron trapping in pure N2O/SiH4 PECVD oxide deposited on N2, H2 and O2 plasma precleaned Si wafers

Electrical properties of 6.3 nm RF oxygen plasma oxide grown near room temperature with in situ dry cleaning of Si surface

Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Passivation of the 4H-SiC/SiO sub 2 interface with nitric oxide

Dry cleaning by atomic F of a Si surface placed vertical and floating in a high pressure plasma created in a barrel reactor

Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

Bonding, Defects, And Defect Dynamics In The Sic-SiO 2 System

Bonding, Defects, And Defect Dynamics In The Sic-SiO2 System

Electrical properties of 6.3 nm RF oxygen plasma oxide grown near room temperature with in situ cleaning of Si surface

Effect of low and high temperature annealing on the electrical properties of pure N 2 O/SiH 4 PECVD SiO 2 deposited at a high rate

Silicon wafer cleaning with CF sub(4)/H sub(2) plasma and its effect on the properties of dry thermally grown oxide

Effect of different surfaces on plasma stripping of photoresist

Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells

Outcomes of gemcitabine-docetaxel as second-line chemotherapy in patients of advanced soft tissue sarcoma: A retrospective analysis

Efficacy and Safety of Ivabradine Once-Daily Prolonged-Release versus Twice-Daily Immediate-Release Formulation in Patients with Stable Chronic Heart Failure with Systolic Dysfunction: A Randomized, Double-Blind, Phase 3 Non-Inferiority (PROFICIENT) Study

Ayurgenomics for stratified medicine: TRISUTRA consortium initiative across ethnically and geographically diverse Indian populations

QOL analysis of a phase II randomized controlled clinical trial comparing efficacy of cabazitaxel versus docetaxel as second line or above therapy in recurrent head and neck cancer

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