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β-Gallium oxide power electronics

APL materials, 2022-02, Vol.10 (2), p.029201-029201-40

2022

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beta -Ga2O3 MOSFETs for Radio Frequency Operation

IEEE electron device letters, 2017-06, Vol.38 (6), p.790-793

2017

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Donors and deep acceptors in β-Ga2O3

Applied physics letters, 2018-08, Vol.113 (6)

2018

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs

IEEE electron device letters, 2018-01, Vol.39 (1), p.67-70

2018

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Transient Thermal Management of a β-Ga₂O₃ MOSFET Using a Double-Side Diamond Cooling Approach

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1628-1635

2023

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Toward high voltage radio frequency devices in β-Ga2O3

Applied physics letters, 2020-12, Vol.117 (24)

2020

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A review of III-V planar nanowire arrays: selective lateral VLS epitaxy and 3D transistors

Journal of physics. D, Applied physics, 2017-10, Vol.50 (39), p.393001

2017

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Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

Scientific reports, 2017-10, Vol.7 (1), p.1-7, Article 13218

2017

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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

Applied physics letters, 2017-07, Vol.111 (1)

2017

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High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

Semiconductor science and technology, 2023-03, Vol.38 (3), p.35011

2023

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β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Applied physics letters, 2022-08, Vol.121 (5)

2022

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Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

Applied physics letters, 2018-11, Vol.113 (22)

2018

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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

IEEE electron device letters, 2020-08, Vol.41 (8), p.1181-1184

2020

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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Applied physics letters, 2017-04, Vol.110 (14)

2017

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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

IEEE electron device letters, 2020-07, Vol.41 (7), p.989-992

2020

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Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5305-5312

2024

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Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5656-5663

2022

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Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

IEEE electron device letters, 2022-08, Vol.43 (8), p.1307-1310

2022

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Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1251-1257

2022

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III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications

IEEE electron device letters, 2014-03, Vol.35 (3), p.324-326, Article 324

2014

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1805-1811

2024

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Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.435-442

2023

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Characteristics of grafted monocrystalline Si/β-Ga2O3 p–n heterojunction

Applied physics letters, 2024-06, Vol.124 (26)

2024

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500 °C operation of β-Ga2O3 field-effect transistors

Applied physics letters, 2022-12, Vol.121 (24)

2022

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β-Gallium oxide power electronics

beta -Ga2O3 MOSFETs for Radio Frequency Operation

Donors and deep acceptors in β-Ga2O3

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs

Transient Thermal Management of a β-Ga₂O₃ MOSFET Using a Double-Side Diamond Cooling Approach

Toward high voltage radio frequency devices in β-Ga2O3

A review of III-V planar nanowire arrays: selective lateral VLS epitaxy and 3D transistors

Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching

Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation

Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals

Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs

III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport

Characteristics of grafted monocrystalline Si/β-Ga2O3 p–n heterojunction

500 °C operation of β-Ga2O3 field-effect transistors

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