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Electron Spin Resonance Scanning Probe Spectroscopy for Ultrasensitive Biochemical Studies

Analytical chemistry (Washington), 2015-05, Vol.87 (9), p.4910-4916

2015

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Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source

Micromachines (Basel), 2020-03, Vol.11 (4), p.364

2020

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Ultrafast ID-VG Technique for Reliable Cryogenic Device Characterization

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3605-3613

2016

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Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection

Analytical chemistry (Washington), 2019-09, Vol.91 (17), p.11108-11115

2019

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Local Field Effect on Charge-Capture/Emission Dynamics

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.5099-5106

2017

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Ferroelectricity in Polar Polymer‐Based FETs: A Hysteresis Analysis

Advanced functional materials, 2018-03, Vol.28 (10), p.n/a

2018

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Analysis and Control of RRAM Overshoot Current

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.108-114

2018

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Observation of strong reflection of electron waves exiting a ballistic channel at low energy

AIP advances, 2016-06, Vol.6 (6), p.065212-065212-9

2016

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Ultrafast I D – V G Technique for Reliable Cryogenic Device Characterization

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.190-197

2023

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Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub‐Glass Transition Temperature

Advanced functional materials, 2018-02, Vol.28 (8), p.n/a

2018

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Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

Review of scientific instruments, 2019-01, Vol.90 (1)

2019

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Impact of RRAM Read Fluctuations on the Program-Verify Approach

IEEE electron device letters, 2017-06, Vol.38 (6), p.736-739

2017

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Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

Materials Science Forum, 2016-05, Vol.858, p.615-618

2016

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Rapid and Accurate C - V Measurements

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3851-3856

2016

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Non-resonant phase sensitive approach for time resolved microwave conductivity in photoactive thin films

Materials today advances, 2024-03, Vol.21, p.100471, Article 100471

2024

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Toward reliable RRAM performance: macro- and micro-analysis of operation processes

Journal of computational electronics, 2017-12, Vol.16 (4), p.1085-1094

2017

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On the Contribution of Bulk Defects on Charge Pumping Current

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2943-2949

2012

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Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET

Materials science forum, 2014-02, Vol.778-780, p.529-532

2014

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Resolving Complex Photoconductivity of Perovskite and Organic Semiconductor Films Using Phase-Sensitive Microwave Interferometry

Journal of physical chemistry. C, 2023-03, Vol.127 (8), p.4203-4209

2023

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Channel Hot-Carrier Effect of 4H-SiC MOSFET

Materials science forum, 2009-01, Vol.615-617, p.813-816

2009

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Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020, p.7-8

2020

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Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

IEEE electron device letters, 2017-03, Vol.38 (3), p.326-329

2017

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First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs

2018 IEEE Symposium on VLSI Technology, 2018, p.89-90

2018

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Non-tunneling origin of the 1/f noise in SiC MOSFET

2018 International Conference on IC Design & Technology (ICICDT), 2018, p.165-168

2018

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Electron Spin Resonance Scanning Probe Spectroscopy for Ultrasensitive Biochemical Studies

Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source

Ultrafast ID-VG Technique for Reliable Cryogenic Device Characterization

Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs

Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection

Local Field Effect on Charge-Capture/Emission Dynamics

Ferroelectricity in Polar Polymer‐Based FETs: A Hysteresis Analysis

Analysis and Control of RRAM Overshoot Current

Observation of strong reflection of electron waves exiting a ballistic channel at low energy

Ultrafast I D – V G Technique for Reliable Cryogenic Device Characterization

Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub‐Glass Transition Temperature

Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

Impact of RRAM Read Fluctuations on the Program-Verify Approach

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

Rapid and Accurate C - V Measurements

Non-resonant phase sensitive approach for time resolved microwave conductivity in photoactive thin films

Toward reliable RRAM performance: macro- and micro-analysis of operation processes

On the Contribution of Bulk Defects on Charge Pumping Current

Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET

Resolving Complex Photoconductivity of Perovskite and Organic Semiconductor Films Using Phase-Sensitive Microwave Interferometry

Channel Hot-Carrier Effect of 4H-SiC MOSFET

Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs

Non-tunneling origin of the 1/f noise in SiC MOSFET

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