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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Journal of crystal growth, 2012-06, Vol.349 (1), p.27-35

2012

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Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6264-6277

2007

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Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps

Applied physics letters, 2009-02, Vol.94 (6)

2009

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Optical properties of as-grown and process-induced stacking faults in 4H-SiC

Physica Status Solidi (b), 2008-07, Vol.245 (7), p.1337-1355

2008

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From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

Applied physics letters, 2000-06, Vol.76 (23), p.3439-3441

2000

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Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

Applied physics letters, 2012-01, Vol.100 (5), p.052102-052102-4

2012

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Effect of initial substrate conditions on growth of cubic silicon carbide

Journal of crystal growth, 2011-06, Vol.324 (1), p.7-14

2011

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Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC

Physical review. B, Condensed matter and materials physics, 2011, Vol.83 (19), p.195201, Article 195201

2011

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Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.981-986

2007

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Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.5-8

2009

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Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

Thin solid films, 2012-11, Vol.522, p.33-35

2012

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Neutron irradiation effects in SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-08, Vol.267 (16), p.2716-2718

2009

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Interfacial Properties of Oxides Grown on 3C-SiC by Rapid Thermal Processing

Journal of the Electrochemical Society, 2011, Vol.158 (1), p.G13

2011

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Prospects for 3C-SiC bulk crystal growth

Journal of crystal growth, 2008-03, Vol.310 (5), p.976-981

2008

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Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

Applied physics letters, 1995-10, Vol.67 (17), p.2524-2526

1995

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High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-11, Vol.165 (1), p.1-4

2009

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Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism

Journal of crystal growth, 2010-11, Vol.312 (23), p.3443-3450

2010

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Activation of aluminum implanted at high doses in 4H–SiC

Journal of applied physics, 2000-08, Vol.88 (4), p.1971-1977

2000

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Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

Physical review. B, Condensed matter and materials physics, 2009, Vol.80 (24), p.241406

2009

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Free electron density and mobility in high-quality 4H–SiC

Applied physics letters, 2000-12, Vol.77 (26), p.4359-4361

2000

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Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC

Journal of luminescence, 2012, Vol.132 (1), p.122-127

2012

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Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

Materials science forum, 2010, Vol.645-648, p.171-174

2010

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Determination of the effective mass of GaN from infrared reflectivity and Hall effect

Applied physics letters, 1996-02, Vol.68 (8), p.1114-1116

1996

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6H-type zigzag faults in low-doped 4H-SiC expitaxial layers

Materials science forum, 2010, Vol.645-648, p.347-350

2010

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Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC

Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps

Optical properties of as-grown and process-induced stacking faults in 4H-SiC

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

Quantum Hall effect in bottom-gated epitaxial graphene grown on the C-face of SiC

Effect of initial substrate conditions on growth of cubic silicon carbide

Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC

Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes

Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

Neutron irradiation effects in SiC

Interfacial Properties of Oxides Grown on 3C-SiC by Rapid Thermal Processing

Prospects for 3C-SiC bulk crystal growth

Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN

High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors

Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism

Activation of aluminum implanted at high doses in 4H–SiC

Electrical properties of the graphene/4H-SiC (0001) interface probed by scanning current spectroscopy

Free electron density and mobility in high-quality 4H–SiC

Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

Determination of the effective mass of GaN from infrared reflectivity and Hall effect

6H-type zigzag faults in low-doped 4H-SiC expitaxial layers

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