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InN Nanowires: Growth and Optoelectronic Properties

Materials, 2012-11, Vol.5 (11), p.2137-2150

Calarco, Raffaella

2012

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Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb₂Te₃ superlattices

Nanoscale, 2015-12, Vol.7 (45), p.19136-19143

2015

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InN and GaN/InN monolayers grown on ZnO( 000 1 ¯) and ZnO(0001)

Journal of applied physics, 2018-09, Vol.124 (11)

2018

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Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2Te3 based superlattices

Nanoscale, 2017-07, Vol.9 (25), p.8774-8780

2017

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Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111)

Advanced materials (Weinheim), 2016-01, Vol.28 (3), p.560-565

2016

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Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering

Journal of applied physics, 2018-06, Vol.123 (21)

2018

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Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices

Crystal growth & design, 2016-07, Vol.16 (7), p.3596-3601

2016

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Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

Scientific reports, 2016-04, Vol.6 (1), p.23843-23843, Article 23843

2016

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Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

Nano letters, 2012-12, Vol.12 (12), p.6119-6125

2012

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Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys

Advanced functional materials, 2019-01, Vol.29 (2), p.n/a

2019

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Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory

Physica status solidi. PSS-RRL. Rapid research letters, 2019-04, Vol.13 (4), p.n/a

2019

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Laser induced structural transformation in chalcogenide based superlattices

Applied physics letters, 2016-05, Vol.108 (22)

2016

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Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation

Scientific reports, 2024-07, Vol.14 (1), p.15713-8, Article 15713

2024

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Atomic stacking and van-der-Waals bonding in GeTe–Sb2Te3 superlattices

Journal of materials research, 2016-10, Vol.31 (20), p.3115-3124

2016

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Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Journal of applied physics, 2016-09, Vol.120 (12)

2016

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Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy

Nano letters, 2007-08, Vol.7 (8), p.2248-2251

2007

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Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate

Nano letters, 2014-06, Vol.14 (6), p.3534-3538

2014

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Toward Truly Single Crystalline GeTe Films: The Relevance of the Substrate Surface

Journal of physical chemistry. C, 2014-12, Vol.118 (51), p.29724-29730

2014

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Evidence for topological band inversion of the phase change material Ge2Sb2Te5

Applied physics letters, 2013-12, Vol.103 (24)

2013

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Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

Applied physics letters, 2015-01, Vol.106 (2)

2015

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Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

Scientific reports, 2017-05, Vol.7 (1), p.1466-7, Article 1466

2017

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Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

AIP advances, 2017-08, Vol.7 (8), p.085113-085113-7

2017

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Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Scientific reports, 2016-03, Vol.6 (1), p.22353-22353, Article 22353

2016

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Growth of crystalline phase change materials by physical deposition methods

Advances in physics: X, 2017-05, Vol.2 (3), p.675-694

2017

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Keep it simple and switch to pure tellurium

Science (American Association for the Advancement of Science), 2021-12, Vol.374 (6573), p.1321-1322

2021

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InN Nanowires: Growth and Optoelectronic Properties

Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb₂Te₃ superlattices

InN and GaN/InN monolayers grown on ZnO( 000 1 ¯) and ZnO(0001)

Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2Te3 based superlattices

Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111)

Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering

Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys

Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory

Laser induced structural transformation in chalcogenide based superlattices

Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation

Atomic stacking and van-der-Waals bonding in GeTe–Sb2Te3 superlattices

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Nucleation and Growth of GaN Nanowires on Si(111) Performed by Molecular Beam Epitaxy

Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate

Toward Truly Single Crystalline GeTe Films: The Relevance of the Substrate Surface

Evidence for topological band inversion of the phase change material Ge2Sb2Te5

Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

Growth of crystalline phase change materials by physical deposition methods

Keep it simple and switch to pure tellurium

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