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30-W/mm GaN HEMTs by field plate optimization

IEEE electron device letters, 2004-03, Vol.25 (3), p.117-119

2004

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IEEE_Xplore

Cholesterolosis of ovary associated with benign serous cystadenoma

Indian journal of pathology & microbiology, 2022-04, Vol.65 (2), p.496-498

2022

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Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s

Electronics letters, 2006-07, Vol.42 (13), p.771-773

2006

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Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6Tbit/s

Electronics letters, 2006-06, Vol.42 (13), p.771-773

2006

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Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs

IEEE electron device letters, 2003-03, Vol.24 (3), p.141-143

2003

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IEEE_Xplore

Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

IEEE electron device letters, 2002-03, Vol.23 (3), p.118-120

2002

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IEEE_Xplore

40-channel transmitter and receiver photonic integrated circuits operating at per channel data rate 12.5Gbit/s

Electronics letters, 2007-04, Vol.43 (8), p.468-469

2007

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Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

IEEE electron device letters, 2002-03, Vol.23 (3), p.118-120

2002

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Strain relaxation of InxGa1−xAs during lateral oxidation of underlying AlAs layers

Applied physics letters, 1999-10, Vol.75 (15), p.2253-2255

1999

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Effect of Sb composition on lateral oxidation rates in AlAs1−xSbx

Applied physics letters, 2000-03, Vol.76 (10), p.1291-1293

2000

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Indirect optical control of microwave circuits using monolithic optically variable capacitors

IEEE transactions on microwave theory and techniques, 1999-07, Vol.47 (7), p.1365-1372

1999

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IEEE_Xplore

Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation

Applied physics letters, 2000-08, Vol.77 (6), p.845-847

2000

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GaAs MESFET's on a truly insulating buffer layer: demonstration of the GaAs on insulator technology

IEEE electron device letters, 1997-03, Vol.18 (3), p.111-113

1997

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IEEE_Xplore

Linearity performance of GaN HEMTs with field plates

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, 2004, p.35-36 vol.1

2004

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IEEE_Xplore

Bias free optical control of microwave circuits and antennas using improved optically variable capacitors

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.2, p.687-690 vol.2

2000

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IEEE_Xplore

Strain relaxation in InGaAs lattice engineered substrates

Journal of electronic materials, 2000-07, Vol.29 (7), p.944-949

2000

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A new FET-based integrated circuit technology: the SASSFET

IEEE electron device letters, 1996-07, Vol.17 (7), p.375-377

1996

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IEEE_Xplore

InP-based devices and their applications for merged FET-HBT technologies

Microwave and optical technology letters, 1996-02, Vol.11 (3), p.121-125

1996

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40-channel transmitter and receiver photonic integrated circuits operating at per channel data rate 12.5 Gbit/s

Electronics letters, 2007-04, Vol.43 (8), p.468

2007

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Progress in gallium nitride-based bipolar transistors

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001, p.125-130

2001

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IEEE_Xplore

Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

Solid State Electronics, 1996-10, Vol.39 (10), p.1449-1455

1996

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40-channel transmitter and receiver photonic integrated circuits operating at per channel data rate 12.5 Gbit/s

Electronics letters, 2007-04, Vol.43 (8), p.1-1

2007

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Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s

Electronics letters, 2006-06, Vol.42 (13), p.1-1

2006

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First demonstration of AlInAs/GaInAs HEMTs on AlAsSb and oxidized AlAsSb buffers

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.189-192

1997

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IEEE_Xplore

Systematic characterization of Cl sub(2) reactive ion etching for gate recessing in AlGaN/GaN HEMTs

IEEE electron device letters, 2002-03, Vol.23 (3), p.118-120

2002

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30-W/mm GaN HEMTs by field plate optimization

Cholesterolosis of ovary associated with benign serous cystadenoma

Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s

Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6Tbit/s

Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs

Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

40-channel transmitter and receiver photonic integrated circuits operating at per channel data rate 12.5Gbit/s

Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

Strain relaxation of InxGa1−xAs during lateral oxidation of underlying AlAs layers

Effect of Sb composition on lateral oxidation rates in AlAs1−xSbx

Indirect optical control of microwave circuits using monolithic optically variable capacitors

Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation

GaAs MESFET's on a truly insulating buffer layer: demonstration of the GaAs on insulator technology

Linearity performance of GaN HEMTs with field plates

Bias free optical control of microwave circuits and antennas using improved optically variable capacitors

Strain relaxation in InGaAs lattice engineered substrates

A new FET-based integrated circuit technology: the SASSFET

InP-based devices and their applications for merged FET-HBT technologies

40-channel transmitter and receiver photonic integrated circuits operating at per channel data rate 12.5 Gbit/s

Progress in gallium nitride-based bipolar transistors

Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

40-channel transmitter and receiver photonic integrated circuits operating at per channel data rate 12.5 Gbit/s

Single-chip 40-channel InP transmitter photonic integrated circuit capable of aggregate data rate of 1.6 Tbit/s

First demonstration of AlInAs/GaInAs HEMTs on AlAsSb and oxidized AlAsSb buffers

Systematic characterization of Cl sub(2) reactive ion etching for gate recessing in AlGaN/GaN HEMTs

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