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GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Applied physics letters, 2018-09, Vol.113 (11)

2018

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Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Applied physics letters, 2017-12, Vol.111 (26)

2017

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Room-temperature polariton lasing in semiconductor microcavities

Physical review letters, 2007-03, Vol.98 (12), p.126405-126405, Article 126405

2007

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Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN

Physical review. X, 2019-08, Vol.9 (3), p.031030, Article 031030

2019

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Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature

Nature communications, 2021-06, Vol.12 (1), p.3504-3504, Article 3504

2021

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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Journal of physics. D, Applied physics, 2007-10, Vol.40 (20), p.6328-6344

2007

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Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Applied physics letters, 2020-06, Vol.116 (22)

2020

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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Journal of applied physics, 2019-09, Vol.126 (12)

2019

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Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN

Ultramicroscopy, 2024-10, Vol.264, p.114006, Article 114006

2024

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Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N

Journal of applied physics, 2016-03, Vol.119 (10)

2016

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Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

Journal of applied physics, 2021-02, Vol.129 (5)

2021

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Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Journal of applied physics, 2020-11, Vol.128 (18)

2020

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Spontaneous polarization buildup in a room-temperature polariton laser

Physical review letters, 2008-09, Vol.101 (13), p.136409-136409, Article 136409

2008

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Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Physical review. B, 2017-03, Vol.95 (12), p.125314, Article 125314

2017

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Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Journal of physics. D, Applied physics, 2020-10, Vol.53 (44), p.445111

2020

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Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Journal of alloys and compounds, 2020-12, Vol.845, p.156269, Article 156269

2020

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Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

Physical review. B, 2016-11, Vol.94 (19), Article 195411

2016

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Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Physical review. B, Condensed matter and materials physics, 2008-02, Vol.77 (7), Article 075306

2008

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Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

Semiconductor science and technology, 2016-09, Vol.31 (9), p.95009

2016

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High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Applied physics letters, 2008-04, Vol.92 (17), p.171102-171102-3

2008

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Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Vectorial near-field imaging of a GaN based photonic crystal cavity

Applied physics letters, 2015-09, Vol.107 (10)

2015

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Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Physical review. B, 2020-10, Vol.102 (15), p.1, Article 155304

2020

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Impact of disorder on high quality factor III-V nitride microcavities

Applied physics letters, 2006-12, Vol.89 (26), p.261101-261101-3

2006

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Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Physical review. B, 2020-12, Vol.102 (24), Article 245304

2020

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GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Room-temperature polariton lasing in semiconductor microcavities

Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN

Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN

Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Spontaneous polarization buildup in a room-temperature polariton laser

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

Vectorial near-field imaging of a GaN based photonic crystal cavity

Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides

Impact of disorder on high quality factor III-V nitride microcavities

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

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