UB Paderborn / Katalog / Suche / in CDI

Hole Mobility Model With Silicon Inversion Layer Symmetry and Stress-Dependent Piezoconductance Coefficients

IEEE electron device letters, 2009-09, Vol.30 (9), p.996-998

2009

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Monte Carlo simulation and measurement of nanoscale n-MOSFETs

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.418-424

2003

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Monte Carlo Stress Engineering of Scaled (110) and (100) Bulk pMOSFETs

IEEE electron device letters, 2008-04, Vol.29 (4), p.369-371

2008

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Scaling of Bulk pMOSFETs: (110) Surface Orientation Versus Uniaxial Compressive Stress

IEEE electron device letters, 2006-12, Vol.27 (12), p.992-994

2006

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Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects

IEEE transactions on electron devices, 2003-02, Vol.50 (2), p.278-284

2003

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Efficient Monte Carlo device modeling

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1891-1897

2000

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Scaling and strain dependence of nanoscale strained-Si p-MOSFET performance

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2461-2466

2003

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Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.81-84

2003

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3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability

2018 IEEE Symposium on VLSI Technology, 2018, p.69-70

2018

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Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x

IEEE electron device letters, 1997-06, Vol.18 (6), p.264-266

1997

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Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation

2009 International Conference on Simulation of Semiconductor Processes and Devices, 2009, p.1-4

2009

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FinFET stress engineering using 3D mechanical stress and 2D Monte Carlo device simulation

ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008, p.166-169

2008

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Monte Carlo Simulation of the Performance Dependence on Surface and Channel Orientation in Scaled pFinFETs

2006 European Solid-State Device Research Conference, 2006, p.174-177

2006

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Proof of a simple time-step propagation scheme for Monte Carlo simulation

Mathematics and computers in simulation, 2003-03, Vol.62 (3), p.323-326

2003

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On the Tunneling Energy within the Full-Band Structure Approach

2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.155-158

2005

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Hole Transport in Orthorhombically Strained Silicon

Journal of computational electronics, 2002-07, Vol.1 (1-2), p.175-177

2002

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Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1μm n-MOSFET

VLSI Design, 2002-12, Vol.2002

2002

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Exploring the limit of strain-induced performance gain in p- and n-SSDOI-MOSFETs

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.601-604

Bufler, F.M.

2004

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Hydrodynamic transport parameters for holes in strained silicon

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116), 1998, p.242-245

1998

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Strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2000, p.64-65

2000

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Simple phase-space trajectory calculation for Monte Carlo device simulation including screened impurity scattering

1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387), 1999, p.31-34

1999

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Full Band Monte-Carlo Device Simulation of an 0.1 um N-Channel MOSFET in Strained Silicon Material

27th European Solid-State Device Research Conference, 1997, p.200-203

1997

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Self-consistent single-particle simulation

International Conference on Simulation of Semiconductor Processes and Devices, 2002, p.159-162

2002

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Efficient Monte Carlo device simulation with automatic error control

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502), 2000, p.27-30

2000

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A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs

International Electron Devices Meeting. IEDM Technical Digest, 1997, p.881-884

1997

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Hole Mobility Model With Silicon Inversion Layer Symmetry and Stress-Dependent Piezoconductance Coefficients

Monte Carlo simulation and measurement of nanoscale n-MOSFETs

Monte Carlo Stress Engineering of Scaled (110) and (100) Bulk pMOSFETs

Scaling of Bulk pMOSFETs: (110) Surface Orientation Versus Uniaxial Compressive Stress

Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects

Efficient Monte Carlo device modeling

Scaling and strain dependence of nanoscale strained-Si p-MOSFET performance

Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs

3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability

Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x

Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation

FinFET stress engineering using 3D mechanical stress and 2D Monte Carlo device simulation

Monte Carlo Simulation of the Performance Dependence on Surface and Channel Orientation in Scaled pFinFETs

Proof of a simple time-step propagation scheme for Monte Carlo simulation

On the Tunneling Energy within the Full-Band Structure Approach

Hole Transport in Orthorhombically Strained Silicon

Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1μm n-MOSFET

Exploring the limit of strain-induced performance gain in p- and n-SSDOI-MOSFETs

Hydrodynamic transport parameters for holes in strained silicon

Strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs

Simple phase-space trajectory calculation for Monte Carlo device simulation including screened impurity scattering

Full Band Monte-Carlo Device Simulation of an 0.1 um N-Channel MOSFET in Strained Silicon Material

Self-consistent single-particle simulation

Efficient Monte Carlo device simulation with automatic error control

A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs

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