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Conjugated Polymer Synthesis via Catalyst-Transfer Polycondensation (CTP): Mechanism, Scope, and Applications

Macromolecules, 2013-11, Vol.46 (21), p.8395-8405

2013

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High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Journal of crystal growth, 2016-03, Vol.438, p.81-89

2016

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Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied physics letters, 2018-02, Vol.112 (6)

2018

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On compensation in Si-doped AlN

Applied physics letters, 2018-04, Vol.112 (15)

2018

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The role of surface kinetics on composition and quality of AlGaN

Journal of crystal growth, 2016-10, Vol.451, p.65-71

2016

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Chain-Growth Polymerization of Aryl Grignards Initiated by a Stabilized NHC-Pd Precatalyst

Macromolecular rapid communications., 2012-05, Vol.33 (9), p.842-847

2012

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The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Journal of applied physics, 2014-09, Vol.116 (12)

2014

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Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Applied physics letters, 2015-06, Vol.106 (23)

2015

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Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Electronic Biosensors Based on III-Nitride Semiconductors

Annual review of analytical chemistry (Palo Alto, Calif.), 2015-07, Vol.8 (1), p.149-169

2015

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On the origin of the 265 nm absorption band in AlN bulk crystals

Applied physics letters, 2012-05, Vol.100 (19)

2012

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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Effect of Solvent on Surface Ordering of Poly(3-hexylthiophene) Thin Films

Langmuir, 2015-05, Vol.31 (18), p.5050-5056

2015

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied physics letters, 2013-10, Vol.103 (16)

2013

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Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Journal of applied physics, 2014-03, Vol.115 (10)

2014

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High free carrier concentration in p-GaN grown on AlN substrates

Applied physics letters, 2017-07, Vol.111 (3)

2017

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Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied physics letters, 2014-12, Vol.105 (22), p.222101

2014

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Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition

Journal of applied physics, 2014-10, Vol.116 (13)

2014

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Polarity control and growth of lateral polarity structures in AlN

Applied physics letters, 2013-05, Vol.102 (18)

2013

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Schottky contact formation on polar and non-polar AlN

Journal of applied physics, 2014-11, Vol.116 (19)

2014

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Structural characteristics of m-plane AlN substrates and homoepitaxial films

Journal of crystal growth, 2019-02, Vol.507 (C), p.389-394

2019

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HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

Journal of crystal growth, 2014-05, Vol.394, p.55-60

2014

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Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10), p.100302

2017

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Conjugated Polymer Synthesis via Catalyst-Transfer Polycondensation (CTP): Mechanism, Scope, and Applications

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

On compensation in Si-doped AlN

The role of surface kinetics on composition and quality of AlGaN

Chain-Growth Polymerization of Aryl Grignards Initiated by a Stabilized NHC-Pd Precatalyst

The effect of polarity and surface states on the Fermi level at III-nitride surfaces

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Electronic Biosensors Based on III-Nitride Semiconductors

On the origin of the 265 nm absorption band in AlN bulk crystals

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Effect of Solvent on Surface Ordering of Poly(3-hexylthiophene) Thin Films

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

High free carrier concentration in p-GaN grown on AlN substrates

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Homoepitaxial AlN thin films deposited on m-plane (11¯00) AlN substrates by metalorganic chemical vapor deposition

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Polarity control and growth of lateral polarity structures in AlN

Schottky contact formation on polar and non-polar AlN

Structural characteristics of m-plane AlN substrates and homoepitaxial films

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

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