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InSe as a case between 3D and 2D layered crystals for excitons

Nature communications, 2019-08, Vol.10 (1), p.3479-8, Article 3479

2019

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Analysis of the gallium gradient in Cu(In1-xGax)Se2 absorbers by X-ray diffraction

Solar energy materials and solar cells, 2021-01, Vol.220, p.110847, Article 110847

2021

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Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Journal of crystal growth, 2009-05, Vol.311 (10), p.2795-2797

2009

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Selectively excited photoluminescence from Eu-implanted GaN

Applied physics letters, 2005-09, Vol.87 (11), p.112107-112107-3

2005

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Indium nitride quantum dots grown by metalorganic vapor phase epitaxy

Applied physics letters, 2003-10, Vol.83 (14), p.2919-2921

2003

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The determination of the bulk residual doping in indium nitride films using photoluminescence

Applied physics letters, 2009-07, Vol.95 (3)

2009

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Phonon signature of the high-pressure rocksalt phase of InN

Physica Status Solidi. B: Basic Solid State Physics, 2015-09, Vol.252 (9), p.2104-2110

2015

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Study and optimization of Al-doped ZnO thin films deposited on PEN substrates by RF-magnetron sputtering from nanopowders targets

Journal of materials science. Materials in electronics, 2016-02, Vol.27 (2), p.1730-1737

2016

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UV transparent single-crystalline bulk AlN substrates

Physica status solidi. C, 2010-01, Vol.7 (1), p.21-24

2010

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High-temperature annealing and optical activation of Eu-implanted GaN

Applied physics letters, 2004-10, Vol.85 (14), p.2712-2714

2004

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Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy

Applied physics letters, 2009-07, Vol.95 (4), p.042102-042102-3

2009

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Superconducting Ga/GaSe layers grown by van der Waals epitaxy

Materials research express, 2018-04, Vol.5 (4), p.45901

2018

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Misfit relaxation of InN quantum dots: Effect of the GaN capping layer

Applied physics letters, 2006-04, Vol.88 (15), p.151913-151913-3

2006

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Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms

Physical review. B, Condensed matter and materials physics, 2005-03, Vol.71 (10), p.104305.1-104305.6, Article 104305

2005

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Optical investigations and strain effect in AlGaN/GaN epitaxial layers

Journal of physics. Conference series, 2017, Vol.864 (1), p.12021

2017

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Raman scattering study of wurtzite and rocksalt InN under high pressure

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (11), Article 115211

2006

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Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy

Applied physics letters, 2006-07, Vol.89 (1)

2006

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Growth of InN films and nanostructures by MOVPE

Journal of crystal growth, 2009-05, Vol.311 (10), p.2761-2766

2009

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Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

Physica status solidi. A, Applications and materials science, 2012-01, Vol.209 (1), p.91-94

2012

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Free electron properties and hydrogen in InN grown by MOVPE

Physica Status Solidi A (applications and materials science), 2011-05, Vol.208 (5), p.1179-1182

2011

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Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition

Applied physics letters, 2005-04, Vol.86 (14)

2005

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Managing gas purity in epitaxial growth

Crystal research and technology (1979), 2011-08, Vol.46 (8), p.809-812

2011

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Alternative precursors for MOVPE growth of InN and GaN at low temperature

Journal of crystal growth, 2009-05, Vol.311 (10), p.2791-2794

2009

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Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction

Solar energy materials and solar cells, 2021-01, Vol.220

2021

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Synthesis and characterization of aluminum doped zinc oxide nanoparticles via a novel and low cost aqueous chemical process

Materials letters, 2023-12, Vol.353, p.135230, Article 135230

2023

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InSe as a case between 3D and 2D layered crystals for excitons

Analysis of the gallium gradient in Cu(In1-xGax)Se2 absorbers by X-ray diffraction

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

Selectively excited photoluminescence from Eu-implanted GaN

Indium nitride quantum dots grown by metalorganic vapor phase epitaxy

The determination of the bulk residual doping in indium nitride films using photoluminescence

Phonon signature of the high-pressure rocksalt phase of InN

Study and optimization of Al-doped ZnO thin films deposited on PEN substrates by RF-magnetron sputtering from nanopowders targets

UV transparent single-crystalline bulk AlN substrates

High-temperature annealing and optical activation of Eu-implanted GaN

Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy

Superconducting Ga/GaSe layers grown by van der Waals epitaxy

Misfit relaxation of InN quantum dots: Effect of the GaN capping layer

Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms

Optical investigations and strain effect in AlGaN/GaN epitaxial layers

Raman scattering study of wurtzite and rocksalt InN under high pressure

Influence of V/III molar ratio on the formation of In vacancies in InN grown by metal-organic vapor-phase epitaxy

Growth of InN films and nanostructures by MOVPE

Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

Free electron properties and hydrogen in InN grown by MOVPE

Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition

Managing gas purity in epitaxial growth

Alternative precursors for MOVPE growth of InN and GaN at low temperature

Analysis of the gallium gradient in Cu(In1-xGax)Se-2 absorbers by X-ray diffraction

Synthesis and characterization of aluminum doped zinc oxide nanoparticles via a novel and low cost aqueous chemical process

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