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Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Nature communications, 2020-05, Vol.11 (1), p.2651-2651, Article 2651

2020

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Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Nature communications, 2021-06, Vol.12 (1), p.3631-3631, Article 3631

2021

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Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS2‑Gap-Mode Metasurfaces

ACS photonics, 2019-07, Vol.6 (7), p.1594-1601

2019

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Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

Scientific reports, 2020-11, Vol.10 (1), p.18919-18919, Article 18919

2020

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Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Applied physics express, 2019-04, Vol.12 (4), p.45007

2019

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Metasurface orbital angular momentum holography

Nature communications, 2019-07, Vol.10 (1), p.2986-8, Article 2986

2019

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Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas

Nanophotonics (Berlin, Germany), 2023-04, Vol.12 (8), p.1405-1419

2023

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Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1096-1103

2015

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Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density

Journal of crystal growth, 2019-11, Vol.526, p.125235, Article 125235

2019

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Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Analysis of low-threshold optically pumped III-nitride microdisk lasers

Applied physics letters, 2020-09, Vol.117 (12)

2020

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An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

Advanced optical materials, 2019-07, Vol.7 (14), p.n/a

2019

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Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

Applied physics express, 2016-01, Vol.9 (1), p.15502

2016

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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Journal of applied physics, 2019-11, Vol.126 (20)

2019

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Bio-inspired flat optics for directional 3D light detection and ranging

npj Nanophotonics, 2024-08, Vol.1 (1), Article 18

2024

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Printing polarization and phase at the optical diffraction limit: near- and far-field optical encryption

Nanophotonics (Berlin, Germany), 2020-07, Vol.10 (1), p.697-704

2020

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Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

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Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

Physica status solidi. A, Applications and materials science, 2014-07, Vol.211 (7), p.1655-1659

2014

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Gallium nitride MEMS resonators: how residual stress impacts design and performances

Microsystem technologies : sensors, actuators, systems integration, 2018, Vol.24 (1), p.371-377

2018

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Gate-Tunable Emission of Exciton−Plasmon Polaritons in Hybrid MoS 2 -Gap-Mode Metasurfaces Downloaded via UNIV OF SOUTHERN INDIANA on

ACS photonics, 2019, Vol.6, p.1594-1601

2019

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On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Journal of applied physics, 2022-10, Vol.132 (16)

2022

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Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS 2 -Gap-Mode Metasurfaces

ACS photonics, 2019-07, Vol.6 (7), p.1594-1601

2019

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Vectorial Hologram Based on Pixelated Metasurface

2020 Conference on Lasers and Electro-Optics (CLEO), 2020, p.1-2

2020

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Gallium nitride MEMS resonators: How residual stress impacts design and performances

2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2016, p.1-4

2016

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GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS) Proceedings, 2011, p.1-5

2011

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Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces

Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS2‑Gap-Mode Metasurfaces

Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate

Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation

Metasurface orbital angular momentum holography

Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas

Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties

Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Analysis of low-threshold optically pumped III-nitride microdisk lasers

An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces

Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Bio-inspired flat optics for directional 3D light detection and ranging

Printing polarization and phase at the optical diffraction limit: near- and far-field optical encryption

Searching for THz Gunn oscillations in GaN planar nanodiodes

Young's modulus extraction of epitaxial heterostructure AlGaN/GaN for MEMS application

Gallium nitride MEMS resonators: how residual stress impacts design and performances

Gate-Tunable Emission of Exciton−Plasmon Polaritons in Hybrid MoS 2 -Gap-Mode Metasurfaces Downloaded via UNIV OF SOUTHERN INDIANA on

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Gate-Tunable Emission of Exciton–Plasmon Polaritons in Hybrid MoS 2 -Gap-Mode Metasurfaces

Vectorial Hologram Based on Pixelated Metasurface

Gallium nitride MEMS resonators: How residual stress impacts design and performances

GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection

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