UB Paderborn / Katalog / Suche / in CDI

Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

Journal of alloys and compounds, 2021-12, Vol.885, p.160951, Article 160951

2021

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Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

Journal of applied physics, 2007-06, Vol.101 (11), p.113101-113101-6

2007

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On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates

Journal of applied physics, 2012-12, Vol.112 (11)

2012

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Probing technique for localized thermal conductivity measurement

Measurement science & technology, 2015-08, Vol.26 (8), p.87003-8

2015

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Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy

Applied physics letters, 2006-09, Vol.89 (11)

2006

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Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

Journal of applied physics, 2014-07, Vol.116 (4)

2014

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Magnesium diffusion profile in GaN grown by MOVPE

Journal of crystal growth, 2008-07, Vol.310 (14), p.3274-3277

2008

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Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films

Materials chemistry and physics, 2023-10, Vol.307, p.128182, Article 128182

2023

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Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Journal of crystal growth, 2007-12, Vol.309 (2), p.113-120

2007

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Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.536-544

2005

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Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Journal of applied physics, 2009-04, Vol.105 (7), p.073703-073703-6

2009

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Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

Journal of crystal growth, 2007-02, Vol.299 (1), p.103-108

2007

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Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films

Materials chemistry and physics, 2023-10, Vol.307

2023

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Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-05, Vol.176 (9), p.723-726

2011

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Reduction of stacking faults in (11$ bar 2 $0) and (11$ bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.282-289

2007

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Electrical conductivity improvement of Fe doped ZnO nanopowders

Materials research bulletin, 2020-09, Vol.129, p.110884, Article 110884

2020

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Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures

Journal of applied physics, 2005-01, Vol.97 (2)

2005

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Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy

Journal of applied physics, 2007-09, Vol.102 (5)

2007

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Characterization of structural defects in (11$ bar 2 $0) GaN films grown on (1$ bar 1 $02) sapphire substrates

Physica status solidi. C, 2006-06, Vol.3 (6), p.1658-1661

2006

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Electrical behaviour of lateral Al/n-GaN/Al structures

Applied surface science, 2010-07, Vol.256 (18), p.5614-5617

2010

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The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen

Microelectronic engineering, 2012-02, Vol.90 (Feb), p.118-120

2012

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Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Journal of crystal growth, 2008-03, Vol.310 (5), p.948-954

2008

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Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)

Applied physics letters, 1997-07, Vol.71 (4), p.527-529

1997

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Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

Applied physics letters, 2003-06, Vol.82 (26), p.4827-4829

2003

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Detailed interpretation of electron transport in n-GaN

Journal of applied physics, 2003-06, Vol.93 (11), p.9095-9103

2003

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Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates

Probing technique for localized thermal conductivity measurement

Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

Magnesium diffusion profile in GaN grown by MOVPE

Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films

Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films

Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

Reduction of stacking faults in (11$ bar 2 $0) and (11$ bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Electrical conductivity improvement of Fe doped ZnO nanopowders

Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures

Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy

Characterization of structural defects in (11$ bar 2 $0) GaN films grown on (1$ bar 1 $02) sapphire substrates

Electrical behaviour of lateral Al/n-GaN/Al structures

The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)

Improved AlGaN/GaN high electron mobility transistor using AlN interlayers

Detailed interpretation of electron transport in n-GaN

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