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Intercomparison of Ionizing Doses From Space Shielding Analyses Using MCNP, Geant4, FASTRAD, and NOVICE

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1629-1636

2020

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The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2100-2105

2007

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A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2238-2244

2007

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Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1791-1796

2003

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The Radiation Tolerance of Strained Si/SiGe n-MODFETs

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2251-2256

2007

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An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3166-3174

2006

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Carrier-removal rate and mobility degradation in heterojunction field-effect transistor structures

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3222-3229

2002

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The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3175-3181

2006

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A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2358-2365

2005

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The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2245-2250

2007

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The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary (npn + pnp) SiGe:C HBT Technology

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2190-2195

2007

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Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3203-3209

2006

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Total dose effects on double gate fully depleted SOI MOSFETs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3767-3772

2004

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Charge trapping in irradiated SOI wafers measured by second harmonic generation

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3231-3237

2004

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Neutron irradiation effects in high electron mobility transistors

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2250-2261

2001

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Final qualification test results of XTJ triple junction space solar cell to AIAA - S-111 - 2005 and Spectrolab test standards

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.002554-002559

2010

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Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN cap Layers

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3801

2004

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Back-Channel, Depletion-Assisted, Gate-Induced Floating Body Effects in Cryogenically-Operated, 90 nm Strained Si SOI MOSFETs

2006 IEEE international SOI Conferencee Proceedings, 2006, p.59-60

2006

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The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices

2006 IEEE Radiation Effects Data Workshop, 2006, p.62-65

2006

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CMOS reliability issues for emerging cryogenic Lunar electronics applications

Solid-state electronics, 2006-06, Vol.50 (6), p.959-963

2006

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Production ready 30% efficient triple junction space solar cells

2008 33rd IEEE Photovoltaic Specialists Conference, 2008, p.1-4

2008

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Reliability testing of large area 3J space solar cells

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.003707-003712

2011

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Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3801-3806

2004

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Qualification status of 30% efficient next triple junction (XTJ) GaInP2/GaAs/Ge solar cells to AIAA S-111-2005 standard

2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.002252-002255

2009

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Radiation effects on III-V heterostructure devices

Jun, Bongim

2003

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Intercomparison of Ionizing Doses From Space Shielding Analyses Using MCNP, Geant4, FASTRAD, and NOVICE

The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments

A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

The Radiation Tolerance of Strained Si/SiGe n-MODFETs

An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

Carrier-removal rate and mobility degradation in heterojunction field-effect transistor structures

The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs

A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs

The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI

The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary (npn + pnp) SiGe:C HBT Technology

Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices

Total dose effects on double gate fully depleted SOI MOSFETs

Charge trapping in irradiated SOI wafers measured by second harmonic generation

Neutron irradiation effects in high electron mobility transistors

Final qualification test results of XTJ triple junction space solar cell to AIAA - S-111 - 2005 and Spectrolab test standards

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN cap Layers

Back-Channel, Depletion-Assisted, Gate-Induced Floating Body Effects in Cryogenically-Operated, 90 nm Strained Si SOI MOSFETs

The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices

CMOS reliability issues for emerging cryogenic Lunar electronics applications

Production ready 30% efficient triple junction space solar cells

Reliability testing of large area 3J space solar cells

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

Qualification status of 30% efficient next triple junction (XTJ) GaInP2/GaAs/Ge solar cells to AIAA S-111-2005 standard

Radiation effects on III-V heterostructure devices

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