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Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires

Applied physics letters, 2022-03, Vol.120 (10)

2022

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Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits

Journal of applied physics, 2022-08, Vol.132 (8)

2022

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Strain relaxation from annealing of SiGe heterostructures for qubits

Journal of applied physics, 2023-07, Vol.134 (3)

2023

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Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics

Beilstein journal of nanotechnology, 2018-12, Vol.9 (1), p.3025-3038

2018

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Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

Beilstein journal of nanotechnology, 2020-09, Vol.11 (1), p.1371-1380

2020

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Bismuth Hexagons: Facile Mass Synthesis, Stability and Applications

Chemphyschem, 2012-06, Vol.13 (8), p.2162-2169

2012

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28Silicon-on-insulator for optically interfaced quantum emitters

Journal of crystal growth, 2022-09, Vol.593, Article 126733

2022

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Pit-formation in germanium homoepitaxial layers

Surface science, 2024-09, Vol.747, p.122505, Article 122505

2024

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Investigation of Au droplet formation and growth of Si x Ge 1−x nanowires by molecular beam epitaxy

CrystEngComm, 2020-10, Vol.22 (38), p.6322-6329

2020

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28 Silicon-on-insulator for optically interfaced quantum emitters

Journal of crystal growth, 2022-09, Vol.593, p.126733, Article 126733

2022

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Leveraging dewetting models rather than nucleation models: current crystallographic challenges in interfacial and nanomaterials research: Contemporary and prospective opportunities to exploit dewetting theory for energy conversion devices and quantum computing

Zeitschrift für Kristallographie. Crystalline materials, 2022-05, Vol.237 (4-5), p.191-200

2022

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Morphogenesis of Liquid Indium Microdroplets on Solid Molybdenum Surfaces during Solidification at Normal Pressure and under Vacuum Conditions

Langmuir, 2022-01, Vol.38 (2), p.762-768

2022

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Investigation of Au droplet formation and growth of SixGe1−x nanowires by molecular beam epitaxy

CrystEngComm, 2020-10, Vol.22 (38), p.6322-6329

2020

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Fast Raman mapping and in situ TEM observation of metal induced crystallization of amorphous silicon

CrystEngComm, 2020-12, Vol.22 (45), p.7983-7991

2020

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Strain Relaxation of Si/SiGe Heterostructures by a Geometric Monte Carlo Approach

Physica status solidi. PSS-RRL. Rapid research letters, 2023-06, Vol.17 (6), p.n/a

2023

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MBE growth of germanium nanowires along <1 1 0>

Journal of crystal growth, 2014-11, Vol.406, p.36-40

2014

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In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth

CrystEngComm, 2018-11, Vol.2 (44), p.717-7177

2018

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Production of precursors for micro-concentrator solar cells by femtosecond laser-induced forward transfer

Applied physics. A, Materials science & processing, 2017-10, Vol.123 (10), p.1-8, Article 670

2017

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Investigation of Au droplet formation and growth of SiGe nanowires by molecular beam epitaxy

CrystEngComm, 2020-10, Vol.22 (38), p.6322-6329

2020

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Viewing SiGe Heterostructure for Qubits with Dislocation Theory

ECS transactions, 2022-09, Vol.109 (4), p.189-196

2022

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Growth of 28 Si Quantum Well Layers for Qubits by a Hybrid MBE/CVD Technique

ECS journal of solid state science and technology, 2023-02, Vol.12 (2), p.24006

2023

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Nucleation Chronology and Electronic Properties of InAs 1– x – y Sb x P y Graded Composition Quantum Dots Grown on an InAs(100) Substrate

ACS applied electronic materials, 2020-03, Vol.2 (3), p.646-650

2020

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Crystalline silicon on glass by steady-state solution growth using indium as solvent

Applied physics. A, Materials science & processing, 2015-06, Vol.119 (4), p.1577-1586

2015

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MBE growth of germanium nanowires along 〈110

Journal of crystal growth, 2014-11, Vol.406, p.36-40

2014

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Ge in-plane nanowires grown by MBE: influence of surface treatment

CrystEngComm, 2013-01, Vol.15 (17), p.3478-3483

2013

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Scanning x-ray microscopy: A sub-100 nm probe toward strain and composition in seeded horizontal Ge(110) nanowires

Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits

Strain relaxation from annealing of SiGe heterostructures for qubits

Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

Bismuth Hexagons: Facile Mass Synthesis, Stability and Applications

28Silicon-on-insulator for optically interfaced quantum emitters

Pit-formation in germanium homoepitaxial layers

Investigation of Au droplet formation and growth of Si x Ge 1−x nanowires by molecular beam epitaxy

28 Silicon-on-insulator for optically interfaced quantum emitters

Leveraging dewetting models rather than nucleation models: current crystallographic challenges in interfacial and nanomaterials research: Contemporary and prospective opportunities to exploit dewetting theory for energy conversion devices and quantum computing

Morphogenesis of Liquid Indium Microdroplets on Solid Molybdenum Surfaces during Solidification at Normal Pressure and under Vacuum Conditions

Investigation of Au droplet formation and growth of SixGe1−x nanowires by molecular beam epitaxy

Fast Raman mapping and in situ TEM observation of metal induced crystallization of amorphous silicon

Strain Relaxation of Si/SiGe Heterostructures by a Geometric Monte Carlo Approach

MBE growth of germanium nanowires along <1 1 0>

In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth

Production of precursors for micro-concentrator solar cells by femtosecond laser-induced forward transfer

Investigation of Au droplet formation and growth of SiGe nanowires by molecular beam epitaxy

Viewing SiGe Heterostructure for Qubits with Dislocation Theory

Growth of 28 Si Quantum Well Layers for Qubits by a Hybrid MBE/CVD Technique

Nucleation Chronology and Electronic Properties of InAs 1– x – y Sb x P y Graded Composition Quantum Dots Grown on an InAs(100) Substrate

Crystalline silicon on glass by steady-state solution growth using indium as solvent

MBE growth of germanium nanowires along 〈110

Ge in-plane nanowires grown by MBE: influence of surface treatment

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