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Optimal DC-Segmentation for Multi-Infeed HVDC Systems Based on Stability Performance

IEEE transactions on power systems, 2016-05, Vol.31 (3), p.2445-2454

2016

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Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions

IEEE electron device letters, 2012-03, Vol.33 (3), p.315-317

2012

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A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology

IEEE electron device letters, 2016-08, Vol.37 (8), p.962-965

2016

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Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1547-1554

2013

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Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs

IEEE transactions on electron devices, 2013-08, Vol.60 (8), p.2485-2492

2013

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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4486-4491

2017

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Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2106-2112

2015

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Impact of NBTI/PBTI on SRAM Stability Degradation

IEEE electron device letters, 2011-06, Vol.32 (6), p.740-742

2011

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Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1739-1745

2015

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Predictive Simulation and Benchmarking of Si and Ge pMOS FinFETs for Future CMOS Technology

IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2271-2277

2014

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Hierarchical Simulation of Statistical Variability: From 3-D MC With " ab initio" Ionized Impurity Scattering to Statistical Compact Models

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2418-2426

2010

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Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs

IEEE transactions on computer-aided design of integrated circuits and systems, 2013-12, Vol.32 (12), p.2004-2008

2013

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Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.739-745

2013

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Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3372-3378

2014

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New Assessment Methodology Based on Energy-Delay-Yield Cooptimization for Nanoscale CMOS Technology

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.1746-1753

2015

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FET as Capacitor-Less eDRAM Cell For High-Density Integration

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.4904-4909

2017

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A Brief Analysis on the Protection and Development of Daci Temple Area in Chengdu

OAlib (Online), 2021, Vol.8 (7), p.1-9

Cheng, Binjie

2021

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Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET

Solid-state electronics, 2013-12, Vol.90, p.51-55

2013

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Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs

Solid-state electronics, 2014-08, Vol.98, p.99-105

2014

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Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET

Solid-state electronics, 2013-12, Vol.90, p.51-55

2013

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Optimal DC-segmentation for multi-infeed HVDC systems based on stability performance

2016 IEEE Power and Energy Society General Meeting (PESGM), 2016, p.1-1

2016

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Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.349-352

2014

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Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.234-237

2013

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Circuit-level modeling of FinFet sub-threshold slope and DIBL mismatch beyond 22nm

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.204-207

2013

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Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques

Journal of computational electronics, 2009-10, Vol.8 (3-4), p.349-373

2009

Volltextzugriff (PDF)

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Optimal DC-Segmentation for Multi-Infeed HVDC Systems Based on Stability Performance

Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions

A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology

Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis

Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs

Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs

Impact of NBTI/PBTI on SRAM Stability Degradation

Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization

Predictive Simulation and Benchmarking of Si and Ge pMOS FinFETs for Future CMOS Technology

Hierarchical Simulation of Statistical Variability: From 3-D MC With " ab initio" Ionized Impurity Scattering to Statistical Compact Models

Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs

Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX

Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS

New Assessment Methodology Based on Energy-Delay-Yield Cooptimization for Nanoscale CMOS Technology

FET as Capacitor-Less eDRAM Cell For High-Density Integration

A Brief Analysis on the Protection and Development of Daci Temple Area in Chengdu

Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET

Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs

Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET

Optimal DC-segmentation for multi-infeed HVDC systems based on stability performance

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability

Circuit-level modeling of FinFet sub-threshold slope and DIBL mismatch beyond 22nm

Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques

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