UB Paderborn / Katalog / Suche / in CDI

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

Solid-state electronics, 2013-02, Vol.80, p.23-27

2013

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Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion devices

Diamond and related materials, 2006-11, Vol.15 (11), p.2082-2085

2006

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In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and wavelets

IEEE transactions on semiconductor manufacturing, 2005-02, Vol.18 (1), p.112-121

2005

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Yield optimization using a GaAs process simulator coupled to a physical device model

IEEE transactions on microwave theory and techniques, 1992-07, Vol.40 (7), p.1353-1363

1992

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RF knee walkout and source access region of unpassivated HFETs

Electronics letters, 2006-11, Vol.42 (24), p.1425-1427

2006

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The effect of Schottky barrier lowering and nonplanar emitter geometry on the performance of a thermionic energy converter

Diamond and related materials, 2006-04, Vol.15 (4), p.870-874

2006

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Sample-sort simulated annealing

IEEE transactions on systems, man and cybernetics. Part B, Cybernetics, 2005-06, Vol.35 (3), p.625-632

2005

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A new physics-based compact model for AlGaN/GaN HFETs

2007 IEEE/MTT-S International Microwave Symposium, 2007, p.787-790

2007

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Focused local learning with wavelet neural networks

IEEE transactions on neural networks, 2002-03, Vol.13 (2), p.304-319

2002

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The Physics of Reliability for High Voltage AlGaN/GaN HFET's

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, p.103-106

2006

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RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's

2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.643-646

2006

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Vacuum Thermionic Energy Conversion Based on Nanocrystalline Diamond Films

Advances in Science and Technology, 2006-10, Vol.48, p.83-92

2006

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DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K

IEEE transactions on electron devices, 1998-09, Vol.45 (9), p.2072-2074, Article 2072

1998

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Mean field annealing: a formalism for constructing GNC-like algorithms

IEEE transactions on neural networks, 1992-01, Vol.3 (1), p.131-138

1992

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Optimal signal processing of frequency-stepped CW radar data

IEEE transactions on microwave theory and techniques, 1995-01, Vol.43 (1), p.94-105

1995

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High temperature DC and RF performance of p-type diamond MESFET: comparison with n-type GaAs MESFET

IEEE electron device letters, 1994-08, Vol.15 (8), p.292-294

1994

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Extraction of the parameters of equivalent circuits of microwave transistors using tree annealing

IEEE transactions on microwave theory and techniques, 1990-11, Vol.38 (11), p.1711-1718

1990

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Microwave AlGaN/GaN HFETs

IEEE microwave magazine, 2005-03, Vol.6 (1), p.56-66

2005

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Time-dependent RF performance degradation modeling of AlGaN/GaN HFETs

MIKON 2008 - 17th International Conference on Microwaves, Radar and Wireless Communications, 2008, p.1-4

2008

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Widebandgap Semiconductor HFET Models for Microwave CAD

2008 European Microwave Integrated Circuit Conference, 2008, p.286-289

2008

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Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs: modelling and experiment

Journal of materials science. Materials in electronics, 1995-04, Vol.6 (2), p.111-114

1995

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Modeling and simulation of AlxGa/sub 1-x/N negative electron affinity cathodes

Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382), 1998, p.289-290

1998

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Thermionic and field electron emission devices from diamond and carbon nanostructures

2010 3rd International Nanoelectronics Conference (INEC), 2010, p.56-57

2010

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Linearity Limitations of AlGaN/GaN HFET's

2006 IEEE Annual Wireless and Microwave Technology Conference, 2006, p.1-4

2006

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Implementation of Artificial Neural Network for Real Time Applications Using Field Programmable Analog Arrays

The 2006 IEEE International Joint Conference on Neural Network Proceedings, 2006, p.1518-1524

2006

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Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

Using negative electron affinity diamond emitters to mitigate space charge in vacuum thermionic energy conversion devices

In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and wavelets

Yield optimization using a GaAs process simulator coupled to a physical device model

RF knee walkout and source access region of unpassivated HFETs

The effect of Schottky barrier lowering and nonplanar emitter geometry on the performance of a thermionic energy converter

Sample-sort simulated annealing

A new physics-based compact model for AlGaN/GaN HFETs

Focused local learning with wavelet neural networks

The Physics of Reliability for High Voltage AlGaN/GaN HFET's

RF Breakdown and Large-Signal Modeling of AlGaN/GaN HFET's

Vacuum Thermionic Energy Conversion Based on Nanocrystalline Diamond Films

DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K

Mean field annealing: a formalism for constructing GNC-like algorithms

Optimal signal processing of frequency-stepped CW radar data

High temperature DC and RF performance of p-type diamond MESFET: comparison with n-type GaAs MESFET

Extraction of the parameters of equivalent circuits of microwave transistors using tree annealing

Microwave AlGaN/GaN HFETs

Time-dependent RF performance degradation modeling of AlGaN/GaN HFETs

Widebandgap Semiconductor HFET Models for Microwave CAD

Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs: modelling and experiment

Modeling and simulation of AlxGa/sub 1-x/N negative electron affinity cathodes

Thermionic and field electron emission devices from diamond and carbon nanostructures

Linearity Limitations of AlGaN/GaN HFET's

Implementation of Artificial Neural Network for Real Time Applications Using Field Programmable Analog Arrays

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