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Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging

New journal of physics, 2016-06, Vol.18 (6), p.63021

2016

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Individual GaAs nanorods imaged by coherent X-ray diffraction

Journal of synchrotron radiation, 2009-11, Vol.16 (6), p.796-802

2009

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Role of Liquid Indium in the Structural Purity of Wurtzite InAs Nanowires That Grow on Si(111)

Nano letters, 2014-12, Vol.14 (12), p.6878-6883

2014

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Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire X-ray diffraction

Journal of applied crystallography, 2012-04, Vol.45 (2), p.239-244

2012

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Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in situ x-ray diffraction

Physical review letters, 2015-02, Vol.114 (5), p.055504-055504, Article 055504

2015

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Random arrangement of the phase domains in single nanowires

Acta crystallographica. Section A, Foundations and advances, 2015-08, Vol.71 (a1), p.s157-s157

2015

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Axial strain in GaAs/InAs core-shell nanowires

Applied physics letters, 2013-01, Vol.102 (4)

2013

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Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates

Nano letters, 2015-02, Vol.15 (2), p.981-989

2015

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In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

Nanoscale research letters, 2012-02, Vol.7 (1), p.109-109, Article 109

2012

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Deposition of diamond/β-SiC composite gradient films by HFCVD: A competitive growth process

Diamond and related materials, 2014-02, Vol.42, p.41-48

2014

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Structural evolution of self-assisted GaAs nanowires grown on Si(111)

Physica status solidi. PSS-RRL. Rapid research letters, 2011-04, Vol.5 (4), p.156-158

2011

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Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Journal of applied crystallography, 2013-08, Vol.46 (4), p.893-897

2013

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Strain relaxation in GaAs/InGaAs core-shell nanowire heterostructures grown by MBE onto Si(111)

Acta crystallographica. Section A, Foundations and advances, 2015-08, Vol.71 (a1), p.s381-s381

2015

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Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

Journal of applied crystallography, 2013-08, Vol.46 (4), p.887-892

2013

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X-ray investigation of polytype distribution in InAs nanowires during MBE growth

Acta crystallographica. Section A, Foundations and advances, 2014-08, Vol.70 (a1), p.C748-C748

2014

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Individual GaAs nanorods imaged by coherent X‐ray diffraction

Journal of synchrotron radiation, 2009-11, Vol.16 (6), p.796-802

2009

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X-ray scattering and diffraction from ion beam induced ripples in crystalline silicon

Journal of applied physics, 2008-08, Vol.104 (4)

2008

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Xe ion beam induced rippled structures on differently oriented single-crystalline Si surfaces

Journal of physics. D, Applied physics, 2010-03, Vol.43 (11), p.112001-112001

2010

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Tuning the shape and damage in ion-beam induced ripples on silicon

Physica status solidi. A, Applications and materials science, 2011-11, Vol.208 (11), p.2608-2611

2011

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Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction

Physica status solidi. PSS-RRL. Rapid research letters, 2013-10, Vol.7 (10), p.860-863

2013

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X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs [111]B

Applied physics. A, Materials science & processing, 2009-09, Vol.96 (4), p.851-859

2009

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Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures

Physica status solidi. PSS-RRL. Rapid research letters, 2014-12, Vol.8 (12), p.1007-1010

2014

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X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs

Applied physics. A, Materials science & processing, 2009-09, Vol.96 (4), p.851-859

2009

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Tuning the shape and damage in ion-beam induced ripples on silicon : High-resolution X-ray Diffraction and Imaging

Physica status solidi. A, Applications and materials science, 2011, Vol.208 (11), p.2608-2611

2011

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Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging

Individual GaAs nanorods imaged by coherent X-ray diffraction

Role of Liquid Indium in the Structural Purity of Wurtzite InAs Nanowires That Grow on Si(111)

Structural polytypism and residual strain in GaAs nanowires grown on Si(111) probed by single-nanowire X-ray diffraction

Evolution of polytypism in GaAs nanowires during growth revealed by time-resolved in situ x-ray diffraction

Random arrangement of the phase domains in single nanowires

Axial strain in GaAs/InAs core-shell nanowires

Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates

In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

Deposition of diamond/β-SiC composite gradient films by HFCVD: A competitive growth process

Structural evolution of self-assisted GaAs nanowires grown on Si(111)

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Strain relaxation in GaAs/InGaAs core-shell nanowire heterostructures grown by MBE onto Si(111)

Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

X-ray investigation of polytype distribution in InAs nanowires during MBE growth

Individual GaAs nanorods imaged by coherent X‐ray diffraction

X-ray scattering and diffraction from ion beam induced ripples in crystalline silicon

Xe ion beam induced rippled structures on differently oriented single-crystalline Si surfaces

Tuning the shape and damage in ion-beam induced ripples on silicon

Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction

X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs [111]B

Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures

X-ray investigation of the interface structure of free standing InAs nanowires grown on GaAs

Tuning the shape and damage in ion-beam induced ripples on silicon : High-resolution X-ray Diffraction and Imaging

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