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Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

Journal of applied physics, 2019-06, Vol.125 (23)

2019

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Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers

Applied physics letters, 2019-06, Vol.114 (25)

2019

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Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors

Journal of crystal growth, 2020-03, Vol.534, p.125511, Article 125511

2020

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Three-Phase Motor Inverter and Current Sensing GaN Power IC

Sensors (Basel, Switzerland), 2023-07, Vol.23 (14), p.6512

2023

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Influence of Different Surface Morphologies on the Performance of High-Voltage, Low-Resistance Diamond Schottky Diodes

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2471-2477

2020

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IEEE_Xplore

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Electronics (Basel), 2024-04, Vol.13 (7), p.1351

2024

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Building Blocks for GaN Power Integration

IEEE access, 2021, Vol.9, p.163122-163137

2021

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3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond

AIP advances, 2019-12, Vol.9 (12), p.125106-125106-6

2019

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Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

Journal of applied physics, 2015-03, Vol.117 (10)

2015

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GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

e-Prime, 2023-06, Vol.4, p.100171, Article 100171

2023

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Publisher’s Note: “3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond” [AIP Adv. 9, 125106 (2019)]

AIP advances, 2020-02, Vol.10 (2), p.029902-029902-1

2020

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Pseudovertical Schottky Diodes on Heteroepitaxially Grown Diamond

Crystals (Basel), 2022-11, Vol.12 (11), p.1626

2022

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Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy

Journal of applied physics, 2012-06, Vol.111 (11)

2012

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Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

International journal of microwave and wireless technologies, 2018-06, Vol.10 (5-6), p.666-673

2018

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First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

Semiconductor science and technology, 2012-05, Vol.27 (5), p.55004

2012

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Suppression of Iron Memory Effect in GaN Epitaxial Layers

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors

IEEE transactions on power electronics, 2021-01, Vol.36 (1), p.83-86

2021

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Control of the Mechanical Adhesion of III–V Materials Grown on Layered h‑BN

ACS applied materials & interfaces, 2020-12, Vol.12 (49), p.55460-55466

2020

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Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.538-545

2015

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IEEE_Xplore

Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-07, Vol.31 (4)

2013

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GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm

Japanese Journal of Applied Physics, 2013-09, Vol.52 (9), p.090204-090204-4

2013

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Valence band offsets at oxide/InN interfaces determined by X-ray photoelectron spectroscopy

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.685-688

2012

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MMICs and Mixed-Signal ICs Based on III/V Technology for Highest Frequencies and Data Rates

Frequenz, 2009, Vol.63 (5-6), p.86-92

2009

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Etude de l'oxyde d'etain dope d'indium et du borate de lithium en vue d'application dans des disposities electrochromes

Benkhelifa, Fouad

1992

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ProQuest

Using Siamese Neural Networks for Efficient and Accurate IoT Device Identification

2022 Seventh International Conference on Fog and Mobile Edge Computing (FMEC), 2022, p.1-7

2022

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Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

Adaptive low-temperature covalent bonding of III-nitride thin films by extremely thin water interlayers

Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors

Three-Phase Motor Inverter and Current Sensing GaN Power IC

Influence of Different Surface Morphologies on the Performance of High-Voltage, Low-Resistance Diamond Schottky Diodes

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Building Blocks for GaN Power Integration

3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond

Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors

GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

Publisher’s Note: “3 GHz RF measurements of AlGaN/GaN transistors transferred from silicon substrates onto single crystalline diamond” [AIP Adv. 9, 125106 (2019)]

Pseudovertical Schottky Diodes on Heteroepitaxially Grown Diamond

Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy

Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

Suppression of Iron Memory Effect in GaN Epitaxial Layers

PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors

Control of the Mechanical Adhesion of III–V Materials Grown on Layered h‑BN

Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V

Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si

GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm

Valence band offsets at oxide/InN interfaces determined by X-ray photoelectron spectroscopy

MMICs and Mixed-Signal ICs Based on III/V Technology for Highest Frequencies and Data Rates

Etude de l'oxyde d'etain dope d'indium et du borate de lithium en vue d'application dans des disposities electrochromes

Using Siamese Neural Networks for Efficient and Accurate IoT Device Identification

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