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InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Journal of applied physics, 2016-03, Vol.119 (9)

2016

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Strain-balanced InGaN/GaN multiple quantum wells

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Quantum Well Solar Cells: Principles, Recent Progress, and Potential

IEEE journal of photovoltaics, 2019-03, Vol.9 (2), p.402-423

2019

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Room temperature ferromagnetic properties of (Ga, Mn)N

Applied physics letters, 2001-11, Vol.79 (21), p.3473-3475

2001

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Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells

Applied physics letters, 2013-09, Vol.103 (10)

2013

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Improved LED output power and external quantum efficiency using InGaN templates

Applied physics letters, 2022-02, Vol.120 (8)

2022

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The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results

Semiconductor science and technology, 2021-03, Vol.36 (3), p.35018

2021

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Device quality templates of InxGa1−xN (x < 0.1) with defect densities comparable to GaN

Applied physics letters, 2020-08, Vol.117 (5)

2020

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Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

Applied physics letters, 2022-08, Vol.121 (5)

2022

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Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Applied physics letters, 2013-10, Vol.103 (18), p.181106

2013

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Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Journal of crystal growth, 2013-03, Vol.367, p.88-93

2013

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P-type InxGa1−xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-1019 cm−3 and device quality surface morphology

Applied physics letters, 2021-09, Vol.119 (12)

2021

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Observing relaxation in device quality InGaN templates by TEM techniques

Applied physics letters, 2020-03, Vol.116 (10)

2020

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Overgrowth of GaN on GaN nanowires produced by mask-less etching

Journal of crystal growth, 2012-08, Vol.352 (1), p.203-208

2012

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Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si

Solar energy materials and solar cells, 2020-09, Vol.215, p.110653, Article 110653

2020

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Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

Semiconductor science and technology, 2022-07, Vol.37 (7), p.75003

2022

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Effect of doping on the magnetic properties of GaMnN:Fermi level engineering

Applied physics letters, 2005-03, Vol.86 (10), p.102504-102504-3

2005

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Phase separation in InGaN grown by metalorganic chemical vapor deposition

Applied physics letters, 1998-01, Vol.72 (1), p.40-42

1998

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100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80

Applied physics letters, 2017-08, Vol.111 (8)

2017

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High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Violet/blue emission from epitaxial cerium oxide films on silicon substrates

Applied physics letters, 1997-03, Vol.70 (13), p.1647-1649

1997

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Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW

Journal of crystal growth, 2019-08, Vol.520, p.18-26

2019

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High optical quality AlInGaN by metalorganic chemical vapor deposition

Applied physics letters, 1999-11, Vol.75 (21), p.3315-3317

1999

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Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied physics letters, 2017-08, Vol.111 (8)

2017

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Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

Applied physics letters, 2000-08, Vol.77 (6), p.821-823

2000

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InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

Strain-balanced InGaN/GaN multiple quantum wells

Quantum Well Solar Cells: Principles, Recent Progress, and Potential

Room temperature ferromagnetic properties of (Ga, Mn)N

Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells

Improved LED output power and external quantum efficiency using InGaN templates

The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results

Device quality templates of InxGa1−xN (x < 0.1) with defect densities comparable to GaN

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

P-type InxGa1−xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-1019 cm−3 and device quality surface morphology

Observing relaxation in device quality InGaN templates by TEM techniques

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si

Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

Effect of doping on the magnetic properties of GaMnN:Fermi level engineering

Phase separation in InGaN grown by metalorganic chemical vapor deposition

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Violet/blue emission from epitaxial cerium oxide films on silicon substrates

Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW

High optical quality AlInGaN by metalorganic chemical vapor deposition

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

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