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Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

Solar energy materials and solar cells, 2009-08, Vol.93 (8), p.1281-1289

2009

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Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films

Diamond and related materials, 2010-05, Vol.19 (5), p.630-636

2010

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Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

Thin solid films, 2010-12, Vol.519 (4), p.1325-1333

2010

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Effect of anodic and cathodic treatments on the charge transfer of boron doped diamond electrodes

Diamond and related materials, 2007-02, Vol.16 (2), p.316-325

2007

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Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation

Thin solid films, 2008-08, Vol.516 (20), p.6954-6958

2008

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Photoelectron spectroscopy of hydrogen at the polycrystalline diamond surface

Diamond and related materials, 2006-04, Vol.15 (4), p.716-719

2006

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Sp/sp character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Diamond and related materials, 2008-04, Vol.17 (4-5), p.451-456

2008

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Growth of multiwalled carbon nanotubes during the initial stages of aerosol-assisted CCVD

Carbon (New York), 2005-11, Vol.43 (14), p.2968-2976

2005

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Influence of boron concentration on the XPS spectra of the (100) surface of homoepitaxial boron-doped diamond films

Physica status solidi. A, Applications and materials science, 2006-09, Vol.203 (12), p.3147-3151

2006

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Semiconducting and magnetic properties of Zn1−xMnxO films grown by metalorganic chemical vapor deposition

Journal of applied physics, 2005-05, Vol.97 (10)

2005

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Nitrogenation of boron doped diamond: Comparison of an electrochemical treatment in liquid ammonia and a NH3/N2 plasma

Diamond and related materials, 2009-05, Vol.18 (5-8), p.890-894

2009

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Comparative study of the structure of a-CNx and a-CNx:H films using NEXAFS, XPS and FT-IR analysis

Thin solid films, 2005-06, Vol.482 (1-2), p.156-166

2005

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Structural properties of nitrogenated amorphous carbon films: Influence of deposition temperature and radiofrequency discharge power

Journal of applied physics, 2008-10, Vol.104 (7), p.073534-073534-14

2008

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Spectroscopic study using FTIR, Raman, XPS and NEXAFS of carbon nitride thin films deposited by RF magnetron sputtering

Thin solid films, 2005-06, Vol.482 (1), p.167-171

2005

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Hydrogen incorporation, bonding and stability in nanocrystalline diamond films

Diamond and related materials, 2008-07, Vol.17 (7), p.1127-1131

2008

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Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes

Diamond and related materials, 2005-03, Vol.14 (3), p.1179-1182

2005

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Influence on the sp/sp character of the carbon on the insertion of nitrogen in RFMS carbon nitride films

Diamond and related materials, 2008-04, Vol.17 (4-5), p.700-704

2008

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Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon

Solar energy materials and solar cells, 2007-01, Vol.91 (2), p.195-200

2007

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Effects of controlled anodic treatments on electrochemical behaviour of boron doped diamond

Diamond and related materials, 2007-04, Vol.16 (4), p.888-891

2007

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Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAIO3/SrTiO3 interface as a function of LaAIO3 growth conditions

Europhysics letters, 2008-04, Vol.82 (1), p.17003

2008

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Silicon incorporation in CVD diamond layers

Physica status solidi. A, Applications and materials science, 2005-09, Vol.202 (11), p.2177-2181

2005

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Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon

Thin solid films, 2009-10, Vol.517 (23), p.6358-6363

2009

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Effect of vacuum annealing on charge transport and trapping in a-Si1−xCx:H/c-Si heterostructures

Journal of non-crystalline solids, 2012-01, Vol.358 (2), p.168-173

2012

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Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing

Diamond and related materials, 2008-07, Vol.17 (7), p.1371-1375

2008

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n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

Physica status solidi. A, Applications and materials science, 2006-09, Vol.203 (12), p.3136-3141

2006

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Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films

Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

Effect of anodic and cathodic treatments on the charge transfer of boron doped diamond electrodes

Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation

Photoelectron spectroscopy of hydrogen at the polycrystalline diamond surface

Sp/sp character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Growth of multiwalled carbon nanotubes during the initial stages of aerosol-assisted CCVD

Influence of boron concentration on the XPS spectra of the (100) surface of homoepitaxial boron-doped diamond films

Semiconducting and magnetic properties of Zn1−xMnxO films grown by metalorganic chemical vapor deposition

Nitrogenation of boron doped diamond: Comparison of an electrochemical treatment in liquid ammonia and a NH3/N2 plasma

Comparative study of the structure of a-CNx and a-CNx:H films using NEXAFS, XPS and FT-IR analysis

Structural properties of nitrogenated amorphous carbon films: Influence of deposition temperature and radiofrequency discharge power

Spectroscopic study using FTIR, Raman, XPS and NEXAFS of carbon nitride thin films deposited by RF magnetron sputtering

Hydrogen incorporation, bonding and stability in nanocrystalline diamond films

Effect of H and O termination on the charge transfer of moderately boron doped diamond electrodes

Influence on the sp/sp character of the carbon on the insertion of nitrogen in RFMS carbon nitride films

Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon

Effects of controlled anodic treatments on electrochemical behaviour of boron doped diamond

Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAIO3/SrTiO3 interface as a function of LaAIO3 growth conditions

Silicon incorporation in CVD diamond layers

Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon

Effect of vacuum annealing on charge transport and trapping in a-Si1−xCx:H/c-Si heterostructures

Electrochemical preconditioning of moderately boron doped diamond electrodes: Effect of annealing

n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

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