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Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

Applied physics letters, 2018-10, Vol.113 (17)

2018

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Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Journal of applied physics, 2024-02, Vol.135 (8)

2024

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Correlating Interface and Border Traps With Distinctive Features of C-V Curves in Vertical Al2O3/GaN MOS Capacitors

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1561-1566

2024

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Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3354-3359

2008

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IEEE_Xplore

High-voltage normally OFF GaN power transistors on SiC and Si substrates

MRS bulletin, 2015-05, Vol.40 (5), p.418-424

2015

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AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1208-1216

2010

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IEEE_Xplore

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2427-2429

2011

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Lateral and vertical power transistors in GaN and Ga2O3

IET power electronics, 2019-12, Vol.12 (15), p.3919-3927

2019

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On the fringing-field effect in liquid-crystal beam-steering devices

Applied Optics, 2004-01, Vol.43 (1), p.11-19

2004

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Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF1010

2023

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Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement

Physica status solidi. C, 2009-06, Vol.6 (6), p.1373-1377

2009

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GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (8), p.n/a

2018

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On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.215-228

2021

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Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.345-348

2012

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IEEE_Xplore

Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

Physica status solidi. C, 2009-06, Vol.6 (6), p.1378-1381

2009

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Breakdown and dynamic effects in GaN power switching devices

Physica status solidi. C, 2013-11, Vol.10 (11), p.1393-1396

2013

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AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

Physica status solidi. C, 2010-10, Vol.7 (10), p.2408-2411

2010

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Experimental study of phase-step broadening by fringing fields in a three-electrode liquid-crystal cell

Applied Optics, 2005-05, Vol.44 (15), p.2989-2995

2005

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Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2334-2339

2016

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IEEE_Xplore

Influence of GaN cap on robustness of AlGaN/GaN HEMTs

2009 IEEE International Reliability Physics Symposium, 2009, p.71-75

2009

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IEEE_Xplore

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.3050-3058

2010

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Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs

IEEE transactions on industry applications, 2016-11, Vol.52 (6), p.4955-4964

2016

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IEEE_Xplore

AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

IEEE electron device letters, 2009-09, Vol.30 (9), p.901-903

2009

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IEEE_Xplore

Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.361-364

2009

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IEEE_Xplore

Lateral 1.8 kV $\beta$ -Ga 2 O 3 MOSFET With 155 MW/cm 2 Power Figure of Merit

IEEE electron device letters, 2019-09, Vol.40 (9), p.1503-1506

2019

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Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Correlating Interface and Border Traps With Distinctive Features of C-V Curves in Vertical Al2O3/GaN MOS Capacitors

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

High-voltage normally OFF GaN power transistors on SiC and Si substrates

AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Lateral and vertical power transistors in GaN and Ga2O3

On the fringing-field effect in liquid-crystal beam-steering devices

Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1

Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement

GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

Breakdown and dynamic effects in GaN power switching devices

AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

Experimental study of phase-step broadening by fringing fields in a three-electrode liquid-crystal cell

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Influence of GaN cap on robustness of AlGaN/GaN HEMTs

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs

AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

Lateral 1.8 kV $\beta$ -Ga 2 O 3 MOSFET With 155 MW/cm 2 Power Figure of Merit

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