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Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

Applied physics letters, 2018-10, Vol.113 (17)

2018

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Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Journal of applied physics, 2024-02, Vol.135 (8)

2024

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GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Physica status solidi. PSS-RRL. Rapid research letters, 2024-11, Vol.18 (11), p.n/a

2024

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Correlating Interface and Border Traps With Distinctive Features of C-V Curves in Vertical Al2O3/GaN MOS Capacitors

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1561-1566

2024

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AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1208-1216

2010

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Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3354-3359

2008

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High-voltage normally OFF GaN power transistors on SiC and Si substrates

MRS bulletin, 2015-05, Vol.40 (5), p.418-424

2015

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Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2427-2429

2011

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Lateral and vertical power transistors in GaN and Ga2O3

IET power electronics, 2019-12, Vol.12 (15), p.3919-3927

2019

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On the fringing-field effect in liquid-crystal beam-steering devices

Applied Optics, 2004-01, Vol.43 (1), p.11

2004

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10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.374-377

2023

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Trapping in \text\mathrm/\text MOScaps investigated by fast capacitive techniques

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-5

2023

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Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF1010

2023

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Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement

Physica status solidi. C, 2009-06, Vol.6 (6), p.1373-1377

2009

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GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (8), p.n/a

2018

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On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.215-228

2021

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Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.345-348

2012

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Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

Physica status solidi. C, 2009-06, Vol.6 (6), p.1378-1381

2009

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GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

ECS transactions, 2013-08, Vol.58 (4), p.187-198

2013

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Fringing-field effect in liquid-crystal beam-steering devices: an approximate analytical model

Journal of the Optical Society of America. A, Optics, image science, and vision, 2004-10, Vol.21 (10), p.1996

2004

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Breakdown and dynamic effects in GaN power switching devices

Physica status solidi. C, 2013-11, Vol.10 (11), p.1393-1396

2013

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(Invited) Technological Approaches Towards High Voltage, Fast Switching GaN Power Transistors

ECS transactions, 2013, Vol.52 (1), p.979-989

2013

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AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

Physica status solidi. C, 2010-10, Vol.7 (10), p.2408-2411

2010

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Experimental study of phase-step broadening by fringing fields in a three-electrode liquid-crystal cell

Applied Optics, 2005-05, Vol.44 (15), p.2989

2005

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Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2334-2339

2016

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Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices

Correlating Interface and Border Traps With Distinctive Features of C-V Curves in Vertical Al2O3/GaN MOS Capacitors

AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Lateral and vertical power transistors in GaN and Ga2O3

On the fringing-field effect in liquid-crystal beam-steering devices

10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer

Trapping in \text\mathrm/\text MOScaps investigated by fast capacitive techniques

Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1

Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement

GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

Fringing-field effect in liquid-crystal beam-steering devices: an approximate analytical model

Breakdown and dynamic effects in GaN power switching devices

(Invited) Technological Approaches Towards High Voltage, Fast Switching GaN Power Transistors

AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

Experimental study of phase-step broadening by fringing fields in a three-electrode liquid-crystal cell

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

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