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Mg Doping of N-Polar, In-Rich InAlN

Materials, 2023-03, Vol.16 (6), p.2250

2023

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Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2666-2669

2018

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GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Materials, 2021-06, Vol.14 (13), p.3461

2021

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Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs

Physica status solidi. A, Applications and materials science, 2017-11, Vol.214 (11), p.n/a

2017

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Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs

Journal of circuits, systems, and computers, 2019-12, Vol.28 (supp01), p.1940009

2019

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Reducing the Impact of Uncertainties in Networked Control Systems Using Type-2 Fuzzy Logic

Journal of Electrical Engineering, 2015-01, Vol.65 (6), p.364-370

2015

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Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire

Materials science in semiconductor processing, 2023-03, Vol.156, p.107290, Article 107290

2023

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Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

IEEE electron device letters, 2013-03, Vol.34 (3), p.432-434

2013

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InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD21

2019

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Resistive switching in nonplanar HfO2-based structures with variable series resistance

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-01, Vol.33 (1)

2015

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Real-Time Communication Subsystem for CAN Bus

International journal on communications antenna and propagation, 2014-08, Vol.4 (4), p.108

2014

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Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

Microelectronic engineering, 2013-12, Vol.112, p.204-207

2013

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Performance of HfOx- and TaOx-based Resistive Switching Structures for Realization of Minimum and Maximum Functions

MRS advances, 2018-01, Vol.3 (59), p.3427-3432

2018

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ZrO 2 /InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8S), p.8

2013

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ZrO sub(2)/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8S), p.08JN07-08JN07

2013

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Ni/Au―Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs : Emerging materials and processes for nanoelectronics and sensors

Microelectronic engineering, 2013, Vol.112, p.204-207

2013

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ZrO2/InAlN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Jpn J Appl Phys, 2013-08, Vol.52 (8), p.08JN07-08JN07-4

2013

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Invited: Polarization engineering in GaN-based normally-off transistors

2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK), 2021, p.1-4

2021

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Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell

2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2018, p.1-6

2018

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Performance analysis of monolithically integrated depletion-/enhancement-mode InAlN/GaN heterostructure HEMT transistors

2017 International Conference on Applied Electronics (AE), 2017, p.1-4

2017

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The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, 2012, p.107-110

2012

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A robust MRAC modification and performance improvement in the presence of uncertainties

IFAC Proceedings Volumes, 2010, Vol.43 (10), p.186-190

2010

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Impairment of endothelial function in Parkinson’s disease

BMC research notes, 2022-09, Vol.15 (1), p.1-284, Article 284

2022

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Causes of Exocrine Pancreatic Insufficiency Other Than Chronic Pancreatitis

Journal of clinical medicine, 2021-12, Vol.10 (24), p.5779

2021

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Mg Doping of N-Polar, In-Rich InAlN

Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions

Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations

GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs

Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs

Reducing the Impact of Uncertainties in Networked Control Systems Using Type-2 Fuzzy Logic

Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region

Resistive switching in nonplanar HfO2-based structures with variable series resistance

Real-Time Communication Subsystem for CAN Bus

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

Performance of HfOx- and TaOx-based Resistive Switching Structures for Realization of Minimum and Maximum Functions

ZrO 2 /InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

ZrO sub(2)/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Ni/Au―Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs : Emerging materials and processes for nanoelectronics and sensors

ZrO2/InAlN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Invited: Polarization engineering in GaN-based normally-off transistors

Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell

Performance analysis of monolithically integrated depletion-/enhancement-mode InAlN/GaN heterostructure HEMT transistors

The influence of an AlOx film in-situ deposited on the GaAs-based HFETs properties

A robust MRAC modification and performance improvement in the presence of uncertainties

Impairment of endothelial function in Parkinson’s disease

Causes of Exocrine Pancreatic Insufficiency Other Than Chronic Pancreatitis

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