UB Paderborn / Katalog / Suche / in CDI

Spatially resolved catalysis in microstructured reactors by IR spectroscopy: CO oxidation over mono- and bifunctional Pt catalysts

Journal of catalysis, 2010-05, Vol.272 (1), p.55-64

2010

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Imaging capabilities of synchrotron infrared microspectroscopy

Faraday discussions, 2004-01, Vol.126, p.289-302; discussion 303-11

2004

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In Situ Analysis of a Mercaptoundecanoic Acid Layer on Gold in Liquid Phase, by PM-IRAS. Evidence for Chemical Changes with the Solvent

Langmuir, 2003-10, Vol.19 (21), p.8807-8812

2003

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Influences of external parameters on low pressure MOVPE growth results of InP based materials

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM), 1994, p.126-129

1994

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Classification of Bacteria Using FT-IR

Spectroscopy, 2007-09, p.20

2007

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Influence of temperature on FTIR spectra of various organic compounds analyzed by on-line carbon dioxide SFC/FTIR

Journal of high resolution chromatography, 1988-10, Vol.11 (10), p.697-705

1988

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Kinetic and spectroscopic characterization of the diarylphosphonyl radical, (2,4,6-But3C6H2)2P=O

Journal of physical chemistry (1952), 1986, Vol.90 (26), p.6479-6750

1986

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Spatial Filtering of Electroencephalography Reduces Artifacts and Enhances Signals Related to Spinal Cord Stimulation (SCS)

Neuromodulation (Malden, Mass.), 2021-12, Vol.24 (8), p.1317-1326

2021

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Classification of bacteria using FT-IR

Food engineering & ingredients, 2007-10, p.22-24

2007

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ChemInform Abstract: Kinetic and Spectroscopic Characterization of the Diarylphosphonyl Radical, (2,4,6‐tBu3C6H2)2P·=O

ChemInform, 1987-05, Vol.18 (18), p.no-no

1987

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The 22q11.2 region regulates presynaptic gene-products linked to schizophrenia

Nature communications, 2022-06, Vol.13 (1), p.3690-3690, Article 3690

2022

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Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

Journal of applied physics, 1998-11, Vol.84 (10), p.5828-5830

1998

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Compensation effects in Mg-doped GaN epilayers

Journal of crystal growth, 1998-06, Vol.189-190, p.523-527

1998

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Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN

Journal of crystal growth, 1998-06, Vol.189-190, p.335-339

1998

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Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers

Journal of applied physics, 2000-11, Vol.88 (10), p.5729-5732

2000

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Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates

Journal of applied physics, 2001-12, Vol.90 (12), p.6011-6016

2001

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Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.50-53

2001

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Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

Journal of electronic materials, 1998-04, Vol.27 (4), p.222-228

1998

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Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.35-38

2001

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Erratum: “Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates” [J. Appl. Phys. 90 , 6011 (2001)]

Journal of applied physics, 2002-05, Vol.91 (10), p.6778-6778

2002

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Efficient and uniform production of III-nitride films by multiwafer MOVPE

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.1-7

1997

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Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE

Journal of crystal growth, 1998-06, Vol.189-190, p.798-802

1998

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Erratum: Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates (Journal of Applied Physics (2001) 90 (6011))

Journal of applied physics, 2002-05, Vol.91 (10 I)

2002

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Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structures

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-02, Vol.51 (1), p.39-43

1998

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Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization

Journal of electronic materials, 1997-10, Vol.26 (10), p.1123-1126

1997

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Spatially resolved catalysis in microstructured reactors by IR spectroscopy: CO oxidation over mono- and bifunctional Pt catalysts

Imaging capabilities of synchrotron infrared microspectroscopy

In Situ Analysis of a Mercaptoundecanoic Acid Layer on Gold in Liquid Phase, by PM-IRAS. Evidence for Chemical Changes with the Solvent

Influences of external parameters on low pressure MOVPE growth results of InP based materials

Classification of Bacteria Using FT-IR

Influence of temperature on FTIR spectra of various organic compounds analyzed by on-line carbon dioxide SFC/FTIR

Kinetic and spectroscopic characterization of the diarylphosphonyl radical, (2,4,6-But3C6H2)2P=O

Spatial Filtering of Electroencephalography Reduces Artifacts and Enhances Signals Related to Spinal Cord Stimulation (SCS)

Classification of bacteria using FT-IR

ChemInform Abstract: Kinetic and Spectroscopic Characterization of the Diarylphosphonyl Radical, (2,4,6‐tBu3C6H2)2P·=O

The 22q11.2 region regulates presynaptic gene-products linked to schizophrenia

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

Compensation effects in Mg-doped GaN epilayers

Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN

Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers

Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates

Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors

Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

Erratum: “Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates” [J. Appl. Phys. 90 , 6011 (2001)]

Efficient and uniform production of III-nitride films by multiwafer MOVPE

Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE

Erratum: Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates (Journal of Applied Physics (2001) 90 (6011))

Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structures

Al-Ga-In-Nitride heterostructures: MOVPE growth in production reactors and characterization

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