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Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogen

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1-3), p.65-67

2001

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Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-10, Vol.552 (1), p.82-87

2005

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Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen

Journal of crystal growth, 2001, Vol.222 (3), p.538-548

2001

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Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy

Journal of crystal growth, 2001-09, Vol.230 (3), p.372-376

2001

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Thickness Influence on Optical and Morphological Properties of HVPE GaN Layers Grown on MOCVD GaN Layers

Physica status solidi. A, Applied research, 2002-03, Vol.190 (1), p.53-58

2002

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Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method

Physica status solidi. A, Applied research, 2001-01, Vol.183 (1), p.5-9

2001

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Experimental and Theoretical Study of the Growth of GaN on Sapphire by HVPE

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.425-428

1999

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High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

Japanese Journal of Applied Physics, 2005-03, Vol.44 (3R), p.1181

2005

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Femtosecond time-resolved interferences of resonantly excited excitons in bulk GaN

Superlattices and microstructures, 2004-10, Vol.36 (4), p.607-614

2004

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Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain

Superlattices and microstructures, 2006-09, Vol.40 (3), p.166-173

2006

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Influence of the partial pressure of GaCl 3 in the growth process of GaN by HVPE under nitrogen

Materials science & engineering. B, Solid-state materials for advanced technology, 2001, Vol.82 (1), p.65-67

2001

Volltextzugriff (PDF)

Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN

Physical review. B, Condensed matter and materials physics, 2008-01, Vol.77 (4), Article 045206

2008

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A new mechanism in the growth process of GaN by HVPE

MRS proceedings, 2000, Vol.639, Article G3.2

2000

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Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain

Superlattices and microstructures, 2005, Vol.40

2005

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Femtosecond time-resolved interferences of resonantly excited excitons in GaN

Superlattices and microstructures, 2004

2004

Volltextzugriff (PDF)

Handbook of Mathematical Models and Algorithms in Computer Vision and Imaging: Mathematical Imaging and Vision

1st ed. 2023., 2023

Volltextzugriff (PDF)

Guest Editorial: JMIV Special Issue Mathematics and Image Analysis

Journal of mathematical imaging and vision, 2014, Vol.48 (2), p.203-204

2014

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Data-Driven Sub-Riemannian Geodesics in SE(2)

Scale Space and Variational Methods in Computer Vision, p.613-625

Volltextzugriff (PDF)

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Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogen

Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen

Hydrogen and nitrogen ambient effects on epitaxial growth of GaN by hydride vapour phase epitaxy

Thickness Influence on Optical and Morphological Properties of HVPE GaN Layers Grown on MOCVD GaN Layers

Computed Growth Rates of (001) GaN Substrates in the Hydride Vapour Phase Method

Experimental and Theoretical Study of the Growth of GaN on Sapphire by HVPE

High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

Femtosecond time-resolved interferences of resonantly excited excitons in bulk GaN

Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain

Influence of the partial pressure of GaCl 3 in the growth process of GaN by HVPE under nitrogen

Continuous-wave and ultrafast coherent reflectivity studies of excitons in bulk GaN

A new mechanism in the growth process of GaN by HVPE

Continuous wave and ultra-fast reflectivity studies for the determination of GaN excitonic oscillator strengths as a function of the in-plane biaxial strain

Femtosecond time-resolved interferences of resonantly excited excitons in GaN

Handbook of Mathematical Models and Algorithms in Computer Vision and Imaging: Mathematical Imaging and Vision

Guest Editorial: JMIV Special Issue Mathematics and Image Analysis

Data-Driven Sub-Riemannian Geodesics in SE(2)

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