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Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers

Optics express, 2011-05, Vol.19 (11), p.10317

2011

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Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers

Optics express, 2011-05, Vol.19 (11), p.10317-10325

2011

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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Physical review letters, 2012-09, Vol.109 (10), p.106603-106603, Article 106603

2012

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"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1675-1682

2003

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Electrical spin injection and detection at Al2O3/ n -type germanium interface using three terminal geometry

Applied physics letters, 2011-10, Vol.99 (16)

2011

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Efficient coupler between silicon photonic and metal-insulator-silicon-metal plasmonic waveguides

Applied physics letters, 2012-12, Vol.101 (25)

2012

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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2690-2698

2007

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Electrical and thermal spin accumulation in germanium

Applied physics letters, 2012-07, Vol.101 (2)

2012

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Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction

Solid-state electronics, 2010-02, Vol.54 (2), p.205-212

2010

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Groups III and V impurity solubilities in silicon due to laser, flash,and solid-phase-epitaxial-regrowth anneals

Applied physics letters, 2006-08, Vol.89 (7), p.071915-071915-3

2006

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Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs

Solid-state electronics, 2011-05, Vol.59 (1), p.25-33

2011

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Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3240-3244

2009

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Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075010-075010

2010

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Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates

Applied physics letters, 2008-07, Vol.93 (2), p.22109

2008

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Improved GeOI substrates for pMOSFET off-state leakage control

Microelectronic engineering, 2009-07, Vol.86 (7), p.1585-1588

2009

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High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

Solid-state electronics, 2009-07, Vol.53 (7), p.723-729

2009

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Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise

Solid-state electronics, 2011-05, Vol.59 (1), p.34-38

2011

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Investigation of 1/ f noise in germanium-on-insulator 0.12 μm PMOS transistors from weak to strong inversion

Solid-state electronics, 2009-12, Vol.53 (12), p.1268-1272

2009

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UTBB FDSOI scaling enablers for the 10nm node

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013, p.1-2

2013

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A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

Microelectronic engineering, 2011-07, Vol.88 (7), p.1298-1300

2011

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Enhanced Fiber Grating Coupler Integrated by Wafer-to-Wafer Bonding

Journal of lightwave technology, 2011-06, Vol.29 (12), p.1847-1851

2011

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Advanced CMOS device technologies for 45 nm node and below

Science and technology of advanced materials, 2007-01, Vol.8 (3), p.214-218

2007

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Spin pumping and inverse spin Hall effect in germanium

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (6), Article 064403

2013

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RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing

2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2023, p.25-27

2023

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Schottky-Barrier Height Lowering by an Increase of the Substrate Doping in PtSi Schottky Barrier Source/Drain FETs

IEEE electron device letters, 2007-02, Vol.28 (2), p.123-125

2007

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Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS

Electrical spin injection and detection at Al2O3/ n -type germanium interface using three terminal geometry

Efficient coupler between silicon photonic and metal-insulator-silicon-metal plasmonic waveguides

A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

Electrical and thermal spin accumulation in germanium

Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction

Groups III and V impurity solubilities in silicon due to laser, flash,and solid-phase-epitaxial-regrowth anneals

Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs

Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substrates

Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates

Improved GeOI substrates for pMOSFET off-state leakage control

High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise

Investigation of 1/ f noise in germanium-on-insulator 0.12 μm PMOS transistors from weak to strong inversion

UTBB FDSOI scaling enablers for the 10nm node

A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

Enhanced Fiber Grating Coupler Integrated by Wafer-to-Wafer Bonding

Advanced CMOS device technologies for 45 nm node and below

Spin pumping and inverse spin Hall effect in germanium

RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing

Schottky-Barrier Height Lowering by an Increase of the Substrate Doping in PtSi Schottky Barrier Source/Drain FETs

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