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β-Gallium oxide power electronics

APL materials, 2022-02, Vol.10 (2), p.029201-029201-40

2022

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Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs

Materials science forum, 2023-05, Vol.1090, p.171-178

2023

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Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Materials science forum, 2022-05, Vol.1062, p.498-503

2022

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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Journal of applied physics, 2010-07, Vol.108 (1), p.014508

2010

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SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth

Materials science forum, 2022-05, Vol.1062, p.549-553

2022

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High Channel Mobility 4H-SiC MOSFETs

Materials science forum, 2006-01, Vol.527-529, p.961-966

2006

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H3TRB Test on 650 V SiC JBS Diodes

Materials science forum, 2018-06, Vol.924, p.581-584

2018

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Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET

Materials science forum, 2020-07, Vol.1004, p.554-558

2020

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Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors

Materials Science Forum, 2016-05, Vol.858, p.611-614

2016

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Analysis of interface trap density and channel mobility in 4H-SiC NMOS capacitors and lateral MOSFETs

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Evaluation of the Effect of Ultraviolet Light Excitation during Characterization of Silicon Carbide Epitaxial Layers

Materials science forum, 2018-06, Vol.924, p.261-264

2018

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Critical temperature and failure mechanism of SiC Schottky rectifiers in Unclamped Inductive Switching (UIS)

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.158-161

2020

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Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness

Materials Science Forum, 2016-05, Vol.858, p.777-781

2016

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A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation

Journal of applied physics, 2007-06, Vol.101 (12), p.124502

2007

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Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.162-169

2009

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IEEE_Xplore

1200-V 5.2-m Omega center dot cm(2) 4H-SiC BJTs with a high common-emitter current gain

IEEE electron device letters, 2007-11, Vol.28 (11), p.1007

2007

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Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO sub(2)/4H-SiC Interface

Materials science forum, 2013-01, Vol.740-742, p.749-752

2013

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A physically based scalable SPICE model for silicon carbide power MOSFETs

2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 2017, p.2678-2684

2017

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IEEE_Xplore

Stability of Current Gain in SiC BJTs

Materials science forum, 2014-02, Vol.778-780, p.1017-1020

2014

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Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.729-732

2010

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IEEE_Xplore

A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

Materials Science Forum, 2009, Vol.600-603, p.755

2009

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A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

Materials science forum, 2009, Vol.600-603, p.755-758

2009

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Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interface

9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russia, 2013, Vol.740-742, p.749-752

2013

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Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1875-1879

2008

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IEEE_Xplore

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Semiconductor science and technology, 2007-04, Vol.22 (4), p.307-311

2007

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β-Gallium oxide power electronics

Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth

High Channel Mobility 4H-SiC MOSFETs

H3TRB Test on 650 V SiC JBS Diodes

Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors

Analysis of interface trap density and channel mobility in 4H-SiC NMOS capacitors and lateral MOSFETs

Evaluation of the Effect of Ultraviolet Light Excitation during Characterization of Silicon Carbide Epitaxial Layers

Critical temperature and failure mechanism of SiC Schottky rectifiers in Unclamped Inductive Switching (UIS)

Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness

A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

1200-V 5.2-m Omega center dot cm(2) 4H-SiC BJTs with a high common-emitter current gain

Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO sub(2)/4H-SiC Interface

A physically based scalable SPICE model for silicon carbide power MOSFETs

Stability of Current Gain in SiC BJTs

Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

Sodium Enhanced Oxidation: Absence of Shallow Interface Traps after Removal of Sodium Ions from the SiO2/4H-SiC Interface

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

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