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Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs

Journal of luminescence, 2023-05, Vol.257, p.119732, Article 119732

2023

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Evaluation of ambipolar diffusion coefficient in AlxGa1−xN semiconductor

Journal of alloys and compounds, 2023-12, Vol.969, p.172475, Article 172475

2023

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Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Journal of physics. D, Applied physics, 2016-04, Vol.49 (14), p.145110-145115

2016

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Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs

Vacuum, 2021-01, Vol.183, p.109871, Article 109871

2021

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Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

Journal of crystal growth, 2017-02, Vol.459, p.173-177

2017

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Anisotropy of Thermal Diffusivity in Lead Halide Perovskite Layers Revealed by Thermal Grating Technique

Journal of physical chemistry. C, 2019-06, Vol.123 (24), p.14914-14920

2019

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Carrier dynamics in blue and green emitting InGaN MQWs

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.977-982

2015

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Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

Journal of applied physics, 2013-03, Vol.113 (10)

2013

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Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

Journal of luminescence, 2017-08, Vol.188, p.301-306

2017

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Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers

Applied physics letters, 2003-08, Vol.83 (6), p.1157-1159

2003

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All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Journal of crystal growth, 2007-03, Vol.300 (1), p.223-227

2007

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Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content

Journal of electronic materials, 2015-12, Vol.44 (12), p.4706-4709

2015

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Dynamics of free carrier absorption in InN layers

Applied physics letters, 2009-10, Vol.95 (16), p.162103-162103-3

2009

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The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Semiconductor science and technology, 2006-07, Vol.21 (7), p.952-958

2006

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Impact of doping on carrier recombination and stimulated emission in highly excited GaN:Mg

Physica. B, Condensed matter, 2011-08, Vol.406 (15), p.2990-2993

2011

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Impact of a superlattice on electrical properties of AlGaN GaN sapphire 2DEG structures

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12055

2015

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Lifetime of nonequilibrium carriers in high-Al-content AlGaN epilayers

Physica status solidi. A, Applications and materials science, 2005-01, Vol.202 (1), p.126-130

2005

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Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers

Review of scientific instruments, 2007-03, Vol.78 (3), p.033901-033901-4

2007

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Optical and electron beam studies of carrier transport in quasibulk GaN

Applied physics letters, 2009-08, Vol.95 (9), p.092101-092101-3

2009

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Photoluminescence features and carrier dynamics in InGaN heterostructures with wide staircase interlayers and differently shaped quantum wells

Lithuanian journal of physics, 2014-01, Vol.54 (3)

2014

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Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers

Applied physics letters, 2005-01, Vol.86 (4), p.41910

2005

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Contribution of dislocations to carrier recombination and transport in highly excited ELO and HYPE GaN layers

Physica status solidi. B, Basic research, 2006-06, Vol.243 (7), p.1426

2006

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Optical nonlinearities and carrier dynamics in semi-insulating crystals

Physica status solidi. C, 2009-12, Vol.6 (12), p.2846-2848

2009

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Study of excess carrier dynamics in polar, semi-polar, and non-polar (In,Ga)N epilayers and QWs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2154-2156

2011

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Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs

Evaluation of ambipolar diffusion coefficient in AlxGa1−xN semiconductor

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures

Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs

Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

Anisotropy of Thermal Diffusivity in Lead Halide Perovskite Layers Revealed by Thermal Grating Technique

Carrier dynamics in blue and green emitting InGaN MQWs

Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures

Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content

Dynamics of free carrier absorption in InN layers

The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Impact of doping on carrier recombination and stimulated emission in highly excited GaN:Mg

Impact of a superlattice on electrical properties of AlGaN GaN sapphire 2DEG structures

Lifetime of nonequilibrium carriers in high-Al-content AlGaN epilayers

Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers

Optical and electron beam studies of carrier transport in quasibulk GaN

Photoluminescence features and carrier dynamics in InGaN heterostructures with wide staircase interlayers and differently shaped quantum wells

Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers

Contribution of dislocations to carrier recombination and transport in highly excited ELO and HYPE GaN layers

Optical nonlinearities and carrier dynamics in semi-insulating crystals

Study of excess carrier dynamics in polar, semi-polar, and non-polar (In,Ga)N epilayers and QWs

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