UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 232

Sortiert nach

Electrical modulation of the optical properties of mid-infrared metamaterials

Applied physics letters, 2012-12, Vol.101 (25)

2012

Link zum Volltext

Verfügbarkeit prüfen

Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors

Journal of physics. D, Applied physics, 2002-04, Vol.35 (7), p.595-598

2002

Link zum Volltext

Verfügbarkeit prüfen

Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

Semiconductor Science and Technology, 2012-01, Vol.27 (1), p.015018

2012

Link zum Volltext

Verfügbarkeit prüfen

Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments

Journal of materials science. Materials in electronics, 2007-07, Vol.18 (7), p.689-694

2007

Link zum Volltext

Verfügbarkeit prüfen

Intersubband spectroscopy of quantum cascade lasers under operating conditions

Applied physics letters, 2006-03, Vol.88 (13), p.131105-131105-3

2006

Link zum Volltext

Verfügbarkeit prüfen

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Journal of electronic materials, 2004-05, Vol.33 (5), p.400-407

2004

Link zum Volltext

Verfügbarkeit prüfen

Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements

Thin solid films, 2012-01, Vol.520 (7), p.3064-3070

2012

Link zum Volltext

Verfügbarkeit prüfen

The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes

Physica status solidi. B. Basic research, 2010-07, Vol.247 (7), p.1761-1763

2010

Link zum Volltext

Verfügbarkeit prüfen

Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes

Journal of crystal growth, 2009-05, Vol.311 (10), p.2857-2859

2009

Link zum Volltext

Verfügbarkeit prüfen

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

Applied physics letters, 2002-05, Vol.80 (20), p.3769-3771

2002

Link zum Volltext

Verfügbarkeit prüfen

Using randomly distributed charges to create quantum dots

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (3), Article 035323

2010

Link zum Volltext

Verfügbarkeit prüfen

Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

Journal of electronic materials, 2003-05, Vol.32 (5), p.350-354

2003

Link zum Volltext

Verfügbarkeit prüfen

Fock-Darwin-like quantum dot states formed by charged Mn interstitial ions

Physical review letters, 2008-11, Vol.101 (22), p.226807-226807, Article 226807

2008

Link zum Volltext

Verfügbarkeit prüfen

InGaAs ∕ AlAsSb quantum cascade lasers

Applied physics letters, 2004-11, Vol.85 (18), p.3992-3994

2004

Link zum Volltext

Verfügbarkeit prüfen

Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer

Journal of physics. D, Applied physics, 2008-05, Vol.41 (9), p.094004-094004 (4)

2008

Link zum Volltext

Verfügbarkeit prüfen

The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

Journal of physics. D, Applied physics, 2008-05, Vol.41 (9), p.094003-094003 (5)

2008

Link zum Volltext

Verfügbarkeit prüfen

Quantum cascade lasers grown by metalorganic vapor phase epitaxy

Applied physics letters, 2003-06, Vol.82 (24), p.4221-4223

2003

Link zum Volltext

Verfügbarkeit prüfen

Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer

Applied physics letters, 2006-08, Vol.89 (8)

2006

Link zum Volltext

Verfügbarkeit prüfen

Alternative positions for the baby at birth before clamping the umbilical cord

Cochrane database of systematic reviews, 2010-10 (10), p.CD007555

2010

Link zum Volltext

Verfügbarkeit prüfen

INFLUENCE OF DUAL-FREQUENCY PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION Si3N4 PASSIVATION ON THE ELECTRICAL CHARACTERISTICS OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

Journal of electronic materials, 2004-05, Vol.33 (5), p.400-407

2004

Link zum Volltext

Verfügbarkeit prüfen

Demonstration of Photon Coupling in Dual Multiple-Quantum-Well Solar Cells

IEEE journal of photovoltaics, 2012-01, Vol.2 (1), p.68-74

2012

Link zum Volltext
IEEE_Xplore

Gated spin relaxation in (1 1 0)-oriented quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2004-07, Vol.23 (3), p.309-314

2004

Link zum Volltext

Verfügbarkeit prüfen

Multiplication and excess noise in AlxGa1−xAs/GaAs multilayer avalanche photodiodes

Journal of applied physics, 2003-08, Vol.94 (4), p.2631-2637

2003

Link zum Volltext

Verfügbarkeit prüfen

Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding

Electronics letters, 2002-11, Vol.38 (24), p.1539

2002

Link zum Volltext

Verfügbarkeit prüfen

Tuning the photoresponse of quantum dot infrared photodetectors across the 8 - 12 μ m atmospheric window via rapid thermal annealing

Applied physics letters, 2007-10, Vol.91 (14), p.143502-143502-3

2007

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 232

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(180)
Mit Volltextzugriff
(194)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(141)
Physical Sciences
(77)
Physics
(74)
Physics, Applied
(51)
Life Sciences & Biomedicine
(46)
Technology
(44)
Materials Science
(34)
Exact Sciences And Technology
(27)
Animals
(26)
Humans
(26)
Engineering
(24)
Materials Science, Multidisciplinary
(24)
Physics, Condensed Matter
(18)
Applied Sciences
(17)
Biological And Medical Sciences
(15)
Engineering, Electrical & Electronic
(14)
Male
(12)
Biochemistry & Molecular Biology
(11)
Chemistry
(10)
Electronics
(10)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Electrical modulation of the optical properties of mid-infrared metamaterials

Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors

Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments

Intersubband spectroscopy of quantum cascade lasers under operating conditions

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements

The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes

Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

Using randomly distributed charges to create quantum dots

Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

Fock-Darwin-like quantum dot states formed by charged Mn interstitial ions

InGaAs ∕ AlAsSb quantum cascade lasers

Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer

The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

Quantum cascade lasers grown by metalorganic vapor phase epitaxy

Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer

Alternative positions for the baby at birth before clamping the umbilical cord

INFLUENCE OF DUAL-FREQUENCY PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION Si3N4 PASSIVATION ON THE ELECTRICAL CHARACTERISTICS OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

Demonstration of Photon Coupling in Dual Multiple-Quantum-Well Solar Cells

Gated spin relaxation in (1 1 0)-oriented quantum wells

Multiplication and excess noise in AlxGa1−xAs/GaAs multilayer avalanche photodiodes

Room temperature GaAs-based quantum cascade laser with GaInP waveguide cladding

Tuning the photoresponse of quantum dot infrared photodetectors across the 8 - 12 μ m atmospheric window via rapid thermal annealing

Suchergebnisse filtern