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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Advanced materials (Weinheim), 2007-11, Vol.19 (22), p.3919-3923

2007

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Effects of metal electrodes on the resistive memory switching property of NiO thin films

Applied physics letters, 2008-07, Vol.93 (4)

2008

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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

Advanced materials (Weinheim), 2008-03, Vol.20 (5), p.924-928

2008

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A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

Advanced materials (Weinheim), 2007-01, Vol.19 (1), p.73-76

2007

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A phantom model study to identify the most effective manual aspiration thrombectomy for acute deep-vein thrombosis of the lower extremity

Clinical radiology, 2016-04, Vol.71 (4), p.321-327

2016

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Fetal blood‐gas values during fetoscopic myelomeningocele repair performed under carbon dioxide insufflation

Ultrasound in obstetrics & gynecology, 2018-09, Vol.52 (3), p.400-402

2018

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Bipolar resistance switching of NiO/indium tin oxide heterojunction

Current applied physics, 2011-05, Vol.11 (3), p.S349-S351

2011

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Ultrafast Brain MRI Can Be Used for Indications beyond Shunted Hydrocephalus in Pediatric Patients

American journal of neuroradiology : AJNR, 2018-08, Vol.39 (8), p.1515-1518

2018

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Electrode dependence of resistance switching in polycrystalline NiO films

Applied physics letters, 2005-12, Vol.87 (26), p.263507-263507-3

2005

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Ultrasound‐based three‐dimensional printed medical model for multispecialty team surgical rehearsal prior to fetoscopic myelomeningocele repair

Ultrasound in obstetrics & gynecology, 2018-06, Vol.51 (6), p.836-837

2018

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Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Applied physics letters, 2006-05, Vol.88 (20), p.202102-202102-3

2006

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Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnOx/Pt and the effect of TiN layer on the improved resistance switching characteristics

Thin solid films, 2012, Vol.520 (6), p.2272-2277

2012

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Defect-induced degradation of rectification properties of aged Pt∕n-InxZn1−xOy Schottky diodes

Applied physics letters, 2008-06, Vol.92 (23)

2008

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Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels

Journal of physics. D, Applied physics, 2009-01, Vol.42 (1), p.015506-015506 (5)

2009

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Extension of Shelf Life by Treatment with Allyl Isothiocyanate in Combination with Acetic Acid on Cooked Rice

Journal of food science, 2002-01, Vol.67 (1), p.274-279

2002

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Determining the optimal maintenance action for a deteriorating repairable system

Probabilistic engineering mechanics, 2008, Vol.23 (1), p.95-101

2008

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Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films

Applied physics letters, 2007-08, Vol.91 (8), p.082104-082104-3

2007

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Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnO x/Pt and the effect of TiN layer on the improved resistance switching characteristics

Thin solid films, 2012, Vol.520 (6), p.2272-2277

2012

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A multiple replenishment contract with ARIMA demand processes

The Journal of the Operational Research Society, 2003-11, Vol.54 (11), p.1189-1197

2003

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Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

Journal of applied physics, 2008-01, Vol.103 (1), p.013706-013706-4

2008

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The Effect of Zirconia Reinforcing Agents on the Microstructure and Mechanical Properties of Hydroxyapatite-Based Nanocomposites

Journal of the American Ceramic Society, 2005-12, Vol.88 (12), p.3374-3379

2005

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Is autism due to brain desynchronization?

International journal of developmental neuroscience, 2005-04, Vol.23 (2-3), p.253-263

2005

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Hazard rate estimation of a mixture model with censored lifetimes

Stochastic environmental research and risk assessment, 2007-11, Vol.21 (6), p.711-716

2007

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Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

Advanced functional materials, 2009-05, Vol.19 (10), p.1587-1593

2009

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Nanostructured Biomaterials for Tissue Engineering Bone

Advances in biochemical engineering, biotechnology, 2007-01, Vol.103, p.275-308

2007

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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

Effects of metal electrodes on the resistive memory switching property of NiO thin films

Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

A phantom model study to identify the most effective manual aspiration thrombectomy for acute deep-vein thrombosis of the lower extremity

Fetal blood‐gas values during fetoscopic myelomeningocele repair performed under carbon dioxide insufflation

Bipolar resistance switching of NiO/indium tin oxide heterojunction

Ultrafast Brain MRI Can Be Used for Indications beyond Shunted Hydrocephalus in Pediatric Patients

Electrode dependence of resistance switching in polycrystalline NiO films

Ultrasound‐based three‐dimensional printed medical model for multispecialty team surgical rehearsal prior to fetoscopic myelomeningocele repair

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnOx/Pt and the effect of TiN layer on the improved resistance switching characteristics

Defect-induced degradation of rectification properties of aged Pt∕n-InxZn1−xOy Schottky diodes

Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels

Extension of Shelf Life by Treatment with Allyl Isothiocyanate in Combination with Acetic Acid on Cooked Rice

Determining the optimal maintenance action for a deteriorating repairable system

Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films

Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnO x/Pt and the effect of TiN layer on the improved resistance switching characteristics

A multiple replenishment contract with ARIMA demand processes

Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

The Effect of Zirconia Reinforcing Agents on the Microstructure and Mechanical Properties of Hydroxyapatite-Based Nanocomposites

Is autism due to brain desynchronization?

Hazard rate estimation of a mixture model with censored lifetimes

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

Nanostructured Biomaterials for Tissue Engineering Bone

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