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Narrow-Band Organic Photodiodes for High-Resolution Imaging

ACS applied materials & interfaces, 2016-10, Vol.8 (39), p.26143-26151

2016

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Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range

Sensors (Basel, Switzerland), 2023-11, Vol.23 (22), p.9150

2023

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A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-μm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation

IEEE journal of solid-state circuits, 2021-11, Vol.56 (11), p.3209-3219

2021

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2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory

IEEE journal of solid-state circuits, 2022-04, Vol.57 (4), p.1125-1137

2022

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A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting

2011 IEEE International Solid-State Circuits Conference, 2011, p.416-418

2011

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7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation

2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, Vol.64, p.122-124

2021

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A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower

2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, p.1-3

2023

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A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10,000e- by Dual Vertical Transfer Gate Technology

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.351-352

2022

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Advanced novel optical stack technologies for high SNR in CMOS Image Sensor

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.353-354

2022

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All-Directional Dual Pixel Auto Focus Technology in CMOS Image Sensors

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology

2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, Vol.65, p.102-104

2022

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A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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7.1 A 4-tap 3.5 μm 1.2 Mpixel Indirect Time-of-Flight CMOS Image Sensor with Peak Current Mitigation and Multi-User Interference Cancellation

2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, Vol.64, p.106-108

2021

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Development of Advanced Inter-Color-Filter Grid on Sub-Micron-Pixel CMOS Image Sensor for Mobile Cameras with High Sensitivity and High Resolution

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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Session 22 overview: Image Sensors

2010 IEEE International Solid-State Circuits Conference - (ISSCC), 2010, p.392-393

2010

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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.104-106

2020

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5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020, p.102-104

2020

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SNR metric and crosstalk in color image sensor of small size pixel

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2013, p.1-2

2013

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A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.16.2.1-16.2.4

2020

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Optical design of dispersive metasurface nano-prism structure for high sensitivity CMOS image sensor

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

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A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

2021 Symposium on VLSI Circuits, 2021, p.1-2

2021

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A 140 dB Single-Exposure Dynamic-Range CMOS Image Sensor with In-Pixel DRAM Capacitor

2022 International Electron Devices Meeting (IEDM), 2022, p.37.7.1-37.7.4

2022

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7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate

2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014, p.124-125

2014

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World's first 16:4:1 triple conversion gain sensor with all-pixel AF for 82.4dB single exposure HDR

Electronic Imaging, 2022, Vol.34 (7), p.257-257-4

2022

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All-Directional Dual Pixel Auto Focus Technology in CMOS Image Sensors

2021 Symposium on VLSI Circuits, 2021, p.1-2

2021

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Narrow-Band Organic Photodiodes for High-Resolution Imaging

Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range

A 1.2-Mpixel Indirect Time-of-Flight Image Sensor With 4-Tap 3.5-μm Pixels for Peak Current Mitigation and Multi-User Interference Cancellation

2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory

A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting

7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation

A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower

A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10,000e- by Dual Vertical Transfer Gate Technology

Advanced novel optical stack technologies for high SNR in CMOS Image Sensor

All-Directional Dual Pixel Auto Focus Technology in CMOS Image Sensors

A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology

A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

7.1 A 4-tap 3.5 μm 1.2 Mpixel Indirect Time-of-Flight CMOS Image Sensor with Peak Current Mitigation and Multi-User Interference Cancellation

Development of Advanced Inter-Color-Filter Grid on Sub-Micron-Pixel CMOS Image Sensor for Mobile Cameras with High Sensitivity and High Resolution

Session 22 overview: Image Sensors

5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

SNR metric and crosstalk in color image sensor of small size pixel

A 0.8 μm Nonacell for 108 Megapixels CMOS Image Sensor with FD-Shared Dual Conversion Gain and 18,000e- Full-Well Capacitance

Optical design of dispersive metasurface nano-prism structure for high sensitivity CMOS image sensor

A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

A 140 dB Single-Exposure Dynamic-Range CMOS Image Sensor with In-Pixel DRAM Capacitor

7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate

World's first 16:4:1 triple conversion gain sensor with all-pixel AF for 82.4dB single exposure HDR

All-Directional Dual Pixel Auto Focus Technology in CMOS Image Sensors

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