UB Paderborn / Katalog / Suche / in CDI

Prediction of gypsum solubility and scaling limits in saline waters

Journal of chemical and engineering data, 1979-07, Vol.24 (3), p.187-192

1979

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On serving members in embargoed countries

IEEE spectrum, 2003-10, Vol.40 (10), p.7

Adler, Michael S

2003

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Sensitivity of Marginal Oscillator Spectrometers

Review of scientific instruments, 1971-05, Vol.42 (5), p.704-712

1971

Volltextzugriff (PDF)

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

IEEE transactions on electron devices, 1984-06, Vol.31 (6), p.821-828

1984

Volltextzugriff (PDF)

Avoiding the Perils of Imaging System Implementations

The information management journal, 2000-10, Vol.34 (4), p.4

Adler, Michael S

2000

Volltextzugriff (PDF)

Accurate calculations of the forward drop and power dissipation in thyristors

IEEE transactions on electron devices, 1978-01, Vol.25 (1), p.16-22

Adler, M.S.

1978

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Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors

IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.310-315

1991

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The evolution of power device technology

IEEE transactions on electron devices, 1984-11, Vol.31 (11), p.1570-1591

1984

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A comparison between BIMOS device types

IEEE transactions on electron devices, 1986-02, Vol.33 (2), p.286-293

Adler, M.S.

1986

Volltextzugriff (PDF)

A self-aligned short process for insulated-gate bipolar transistors

IEEE transactions on electron devices, 1992-06, Vol.39 (6), p.1317-1321

1992

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Measurements of the p-n product in heavily doped epitaxial emitters

IEEE transactions on electron devices, 1984-01, Vol.31 (1), p.3-17

1984

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n-channel lateral insulated gate transistors: Part I-Steady-state characteristics

IEEE transactions on electron devices, 1986-12, Vol.33 (12), p.1956-1963

1986

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Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shorts

IEEE electron device letters, 1990-05, Vol.11 (5), p.184-186

1990

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A method for terminating mesh lines in finite difference formulations of the semiconductor device equations

Solid-state electronics, 1980-01, Vol.23 (8), p.845-853

Adler, Michael S.

1980

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The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistors

IEEE electron device letters, 1988-09, Vol.9 (9), p.450-452

1988

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Details of the plasma-spreading process in thyristors

IEEE transactions on electron devices, 1980-02, Vol.27 (2), p.495-502

Adler, M.S.

1980

Volltextzugriff (PDF)

Power semiconductor switching devices-A comparison based on inductive switching

IEEE transactions on electron devices, 1982-06, Vol.29 (6), p.947-952

1982

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Lateral HVIC with 1200-V bipolar and field-effect devices

IEEE transactions on electron devices, 1986-12, Vol.33 (12), p.1992-2001

1986

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Theory and breakdown voltage for planar devices with a single field limiting ring

IEEE transactions on electron devices, 1977-02, Vol.24 (2), p.107-113

1977

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Measurement of heavy doping parameters in silicon by electron-beam-induced current

IEEE transactions on electron devices, 1980-05, Vol.27 (5), p.983-990

1980

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A new noncapacitive method of determining net surface charge densities using floating field ring devices

IEEE transactions on electron devices, 1978-09, Vol.25 (9), p.1166-1169

Adler, M.S.

1978

Volltextzugriff (PDF)

Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions

IEEE transactions on electron devices, 1975-10, Vol.22 (10), p.910-916

1975

Volltextzugriff (PDF)

Book review: Preserving Digital Information: A How-To-Do-It Manual

Information Management Journal, 2001, Vol.35 (3), p.52

Adler, Michael S

2001

Volltextzugriff (PDF)

Factors determining forward voltage drop in the field-terminated diode (FTD)

IEEE transactions on electron devices, 1978-05, Vol.25 (5), p.529-537

Adler, M.S.

1978

Volltextzugriff (PDF)

Details of the plasma spreading process in thyristors

1979 International Electron Devices Meeting, 1979, p.242-245

Adler, M.S.

1979

Volltextzugriff (PDF)

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Prediction of gypsum solubility and scaling limits in saline waters

On serving members in embargoed countries

Sensitivity of Marginal Oscillator Spectrometers

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

Avoiding the Perils of Imaging System Implementations

Accurate calculations of the forward drop and power dissipation in thyristors

Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors

The evolution of power device technology

A comparison between BIMOS device types

A self-aligned short process for insulated-gate bipolar transistors

Measurements of the p-n product in heavily doped epitaxial emitters

n-channel lateral insulated gate transistors: Part I-Steady-state characteristics

Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shorts

A method for terminating mesh lines in finite difference formulations of the semiconductor device equations

The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistors

Details of the plasma-spreading process in thyristors

Power semiconductor switching devices-A comparison based on inductive switching

Lateral HVIC with 1200-V bipolar and field-effect devices

Theory and breakdown voltage for planar devices with a single field limiting ring

Measurement of heavy doping parameters in silicon by electron-beam-induced current

A new noncapacitive method of determining net surface charge densities using floating field ring devices

Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions

Book review: Preserving Digital Information: A How-To-Do-It Manual

Factors determining forward voltage drop in the field-terminated diode (FTD)

Details of the plasma spreading process in thyristors

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