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Teaching IFRS

1, 2012

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The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

IEEE transactions on electron devices, 1984-06, Vol.31 (6), p.821-828

1984

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Hahnemann's experiments with 50 millesimal potencies: A further review of his casebooks

Homeopathy : the journal of the Faculty of Homeopathy, 2006-07, Vol.95 (3), p.171-181

2006

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Accurate calculations of the forward drop and power dissipation in thyristors

IEEE transactions on electron devices, 1978-01, Vol.25 (1), p.16-22

Adler, M.S.

1978

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n-channel lateral insulated gate transistors: Part I-Steady-state characteristics

IEEE transactions on electron devices, 1986-12, Vol.33 (12), p.1956-1963

1986

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The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistors

IEEE electron device letters, 1988-09, Vol.9 (9), p.450-452

1988

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Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions

IEEE transactions on electron devices, 1975-10, Vol.22 (10), p.910-916

1975

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Investigation of the surge characteristics of power rectifiers and thyristors in large-area press packages

IEEE transactions on electron devices, 1979-07, Vol.26 (7), p.1085-1091

1979

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The insulated gate rectifier (IGR): A new power switching device

1982 International Electron Devices Meeting, 1982, p.264-267

1982

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Limitations on injection efficiency in power devices

IEEE transactions on electron devices, 1976-08, Vol.23 (8), p.858-863, Article 858

1976

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Eastern Europe Library Project

IEEE circuits and devices magazine, 1996-01, Vol.12 (1), p.36

Adler, M.S.

1996

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Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors

IEEE transactions on electron devices, 1991-02, Vol.38 (2), p.310-315

1991

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The evolution of power device technology

IEEE transactions on electron devices, 1984-11, Vol.31 (11), p.1570-1591

1984

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Achieving accuracy in transistor and thyristor modeling

1978 International Electron Devices Meeting, 1978, p.550-555

Adler, M.S.

1978

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Factors determining forward voltage drop and forward blocking in the field terminated diode (FTD)

1977 International Electron Devices Meeting, 1977, p.42-46

Adler, M.S.

1977

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A comparison between BIMOS device types

IEEE transactions on electron devices, 1986-02, Vol.33 (2), p.286-293

Adler, M.S.

1986

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A self-aligned short process for insulated-gate bipolar transistors

IEEE transactions on electron devices, 1992-06, Vol.39 (6), p.1317-1321

1992

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A reverse-channel, high-voltage lateral IGBT

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, 1994, p.57-61

1994

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An operational method to model carrier degeneracy and band gap narrowing

Solid-state electronics, 1983-01, Vol.26 (5), p.387-396

Adler, M.S.

1983

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Measurements of the p-n product in heavily doped epitaxial emitters

IEEE transactions on electron devices, 1984-01, Vol.31 (1), p.3-17

1984

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Design of current sensors in IGBTs

IEEE transactions on electron devices, 1992-11, Vol.39 (11), p.2673

1992

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VIB-5 analysis of current flow in lateral insulated gate transistors

IEEE transactions on electron devices, 1985-11, Vol.32 (11), p.2555-2555

1985

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Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shorts

IEEE electron device letters, 1990-05, Vol.11 (5), p.184-186

1990

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Details of the plasma-spreading process in thyristors

IEEE transactions on electron devices, 1980-02, Vol.27 (2), p.495-502

Adler, M.S.

1980

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Power semiconductor switching devices-A comparison based on inductive switching

IEEE transactions on electron devices, 1982-06, Vol.29 (6), p.947-952

1982

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Teaching IFRS

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

Hahnemann's experiments with 50 millesimal potencies: A further review of his casebooks

Accurate calculations of the forward drop and power dissipation in thyristors

n-channel lateral insulated gate transistors: Part I-Steady-state characteristics

The effect of substrate doping on the performance of anode-shorted n-channel lateral insulated-gate bipolar transistors

Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions

Investigation of the surge characteristics of power rectifiers and thyristors in large-area press packages

The insulated gate rectifier (IGR): A new power switching device

Limitations on injection efficiency in power devices

Eastern Europe Library Project

Interaction between monolithic, junction-isolated lateral insulated-gate bipolar transistors

The evolution of power device technology

Achieving accuracy in transistor and thyristor modeling

Factors determining forward voltage drop and forward blocking in the field terminated diode (FTD)

A comparison between BIMOS device types

A self-aligned short process for insulated-gate bipolar transistors

A reverse-channel, high-voltage lateral IGBT

An operational method to model carrier degeneracy and band gap narrowing

Measurements of the p-n product in heavily doped epitaxial emitters

Design of current sensors in IGBTs

VIB-5 analysis of current flow in lateral insulated gate transistors

Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shorts

Details of the plasma-spreading process in thyristors

Power semiconductor switching devices-A comparison based on inductive switching

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