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Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.3063-3070

2006

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Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1547-1554

2013

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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4486-4491

2017

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Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Micromachines (Basel), 2021-06, Vol.12 (6), p.680

2021

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Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications

IEEE journal of the Electron Devices Society, 2017-11, Vol.5 (6), p.466-472

2017

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Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.833-839

2013

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Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3372-3378

2014

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Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment

Journal of microelectronic manufacturing, 2020-12, Vol.3 (4), p.1-8

2020

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Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs

Micromachines (Basel), 2018-12, Vol.9 (12), p.643

2018

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Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Superlattices and microstructures, 2017-11, Vol.111, p.649-655

2017

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Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.213-216

2016

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Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D 'atomistic' simulation

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012, p.109-112

2012

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Hierarchical simulation of nanosheet field effect transistor: NESS flow

Solid-state electronics, 2023-01, Vol.199, p.108489, Article 108489

2023

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Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

IEEE electron device letters, 2018-09, Vol.39 (9), p.1473-1476

2018

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Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform

Journal of computational electronics, 2020-09, Vol.19 (3), p.1031-1046

2020

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A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory

IEEE transactions on nanotechnology, 2020, Vol.19, p.704-710

2020

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Problems With the Continuous Doping TCAD Simulations of Decananometer CMOS Transistors

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2745-2751

2014

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3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4008-4013

2013

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(Invited) Modelling and Simulation of Advanced Semiconductor Devices

ECS transactions, 2017, Vol.80 (4), p.33-42

2017

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A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs

IEEE transactions on electron devices, 2015-06, Vol.62 (6), p.2056-2060

2015

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Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3884-3892

2018

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Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs

IEEE electron device letters, 2013-05, Vol.34 (5), p.686-688

2013

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Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels

IEEE transactions on nanotechnology, 2017-09, Vol.16 (5), p.727-735

2017

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The Extraction of Polyoxometalate Flash Compact Model and Corresponding Circuit Simulation

Journal of nanoelectronics and optoelectronics, 2021-06, Vol.16 (6), p.884-890

2021

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Dynamic Simulation of Write '1' Operation in the Bi-stable 1-Transistor SRAM Cell

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.237-240

2020

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Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis

Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications

Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs

Performance and Variability of Doped Multithreshold FinFETs for 10-nm CMOS

Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment

Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs

Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs

Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study

Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D 'atomistic' simulation

Hierarchical simulation of nanosheet field effect transistor: NESS flow

Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform

A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory

Problems With the Continuous Doping TCAD Simulations of Decananometer CMOS Transistors

3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET

(Invited) Modelling and Simulation of Advanced Semiconductor Devices

A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs

Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation Study

Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs

Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels

The Extraction of Polyoxometalate Flash Compact Model and Corresponding Circuit Simulation

Dynamic Simulation of Write '1' Operation in the Bi-stable 1-Transistor SRAM Cell

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