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High-power and reliable operation of vertical light-emitting diodes on bulk GaN

Applied physics letters, 2004-11, Vol.85 (18), p.3971-3973

2004

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Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

Journal of crystal growth, 2004-03, Vol.264 (1), p.172-177

2004

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Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates

Applied physics letters, 2004-05, Vol.84 (21), p.4313-4315

2004

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Growth and characterization of GaN PiN rectifiers on free-standing GaN

Applied physics letters, 2005-08, Vol.87 (5), p.053503-053503-3

2005

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Outcome implications for the timing of bilateral total knee arthroplasties

Clinical orthopaedics and related research, 1997-12, Vol.345 (345), p.99-105

1997

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Stacking-fault formation and propagation in 4H-SiC PiN diodes

Journal of electronic materials, 2002-05, Vol.31 (5), p.370-375

2002

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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

Applied physics letters, 2003-04, Vol.82 (15), p.2410-2412

2003

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Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes

Journal of crystal growth, 2007-03, Vol.300 (2), p.382-386

2007

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High quality interlayer dielectric for 4H–SiC DMOSFETs

Semiconductor science and technology, 2007-11, Vol.22 (11), p.1193-1199

2007

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Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs

Solid-state electronics, 2008, Vol.52 (1), p.164-170

2008

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Stacking-fault formation and propagation in 4H-SiC PiN diodes

Journal of electronic materials, 2002-07, Vol.31 (7), p.827-827

2002

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Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes

Journal of electronic materials, 2004-11, Vol.33 (11), p.1401-1405

2004

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Partial dislocations and stacking faults in 4H-SiC PiN diodes

Journal of electronic materials, 2004-05, Vol.33 (5), p.472-476

2004

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Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm

Journal of crystal growth, 2004-09, Vol.269 (2), p.242-248

2004

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Cathodoluminescence mapping and selective etching of defects in bulk GaN

Journal of crystal growth, 2006-05, Vol.291 (1), p.82-85

2006

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Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

Microelectronics and reliability, 2003-12, Vol.43 (12), p.1987-1991

2003

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COMPARISON OF RECOVERY FROM ANAESTHESIA INDUCED IN CHILDREN WITH EITHER PROPOFOL OR THIOPENTONE

British journal of anaesthesia : BJA, 1993-02, Vol.70 (2), p.192-195

1993

Volltextzugriff (PDF)

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

Materials science forum, 2004-01, Vol.457-460, p.537-542

2004

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Structure-property relationship in a thin film composite reverse osmosis membrane

Journal of membrane science, 1989-10, Vol.46 (2), p.243-260

Arthur, Samuel D.

1989

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Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes

Materials science forum, 2006-10, Vol.527-529, p.1541-1544

2006

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LOCAL ANAESTHETIC TECHNIQUES IN PAEDIATRIC SURGERY

British journal of anaesthesia : BJA, 1986-07, Vol.58 (7), p.760-778

1986

Volltextzugriff (PDF)

Silicon and silicon dioxide thermal bonding for silicon-on-insulator applications

Journal of applied physics, 1988-04, Vol.63 (8), p.2773-2777

1988

Volltextzugriff (PDF)

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

Materials science forum, 2007-01, Vol.556-557, p.339-342

2007

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Revision Rates after Knee Replacement in the United States

Medical care, 1998-05, Vol.36 (5), p.661-669

1998

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4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Materials science forum, 2006-10, Vol.527-529, p.1265-1268, Article 1265

2006

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High-power and reliable operation of vertical light-emitting diodes on bulk GaN

Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates

Growth and characterization of GaN PiN rectifiers on free-standing GaN

Outcome implications for the timing of bilateral total knee arthroplasties

Stacking-fault formation and propagation in 4H-SiC PiN diodes

Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

Homoepitaxial growth and electrical characterization of GaN-based Schottky and light-emitting diodes

High quality interlayer dielectric for 4H–SiC DMOSFETs

Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs

Stacking-fault formation and propagation in 4H-SiC PiN diodes

Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes

Partial dislocations and stacking faults in 4H-SiC PiN diodes

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm

Cathodoluminescence mapping and selective etching of defects in bulk GaN

Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

COMPARISON OF RECOVERY FROM ANAESTHESIA INDUCED IN CHILDREN WITH EITHER PROPOFOL OR THIOPENTONE

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

Structure-property relationship in a thin film composite reverse osmosis membrane

Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes

LOCAL ANAESTHETIC TECHNIQUES IN PAEDIATRIC SURGERY

Silicon and silicon dioxide thermal bonding for silicon-on-insulator applications

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

Revision Rates after Knee Replacement in the United States

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

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