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Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

physica status solidi (b), 2002-02, Vol.229 (3), p.r1-r3

2002

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Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1)

physica status solidi (b), 2002-04, Vol.230 (2), p.R4-R6

2002

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Band Gap of Hexagonal InN and InGaN Alloys

physica status solidi (b), 2002-12, Vol.234 (3), p.787-795

2002

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Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

Applied physics letters, 2000-06, Vol.76 (26), p.3923-3925

2000

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InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Journal of crystal growth, 2001-02, Vol.222 (4), p.701-705

2001

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Terahertz Scanner for Improved Wood Sorting from Bulky Waste

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2022, p.1-2

2022

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Photoluminescence, depth profile, and lattice instability of hexagonal InN films

Applied physics letters, 2003-12, Vol.83 (26), p.5440-5442

2003

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Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys

Physica Status Solidi (b), 2003-11, Vol.240 (2), p.425-428

2003

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First AlGaN/GaN MOSFET with photoanodic gate dielectric

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.107-111

2002

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Multi-Modal Image Acquisition for AI-Based Bulky Waste Sorting (Incl. Terahertz Synthetic Aperture Radar)

2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2023, p.1-2

2023

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Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

Journal of crystal growth, 2001-09, Vol.230 (3), p.564-568

2001

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Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Journal of crystal growth, 2002-06, Vol.241 (4), p.535-542

2002

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Point defects in gamma-irradiated n-GaN

Semiconductor science and technology, 2000-01, Vol.15 (1), p.73-78

2000

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Electrical properties of photoanodically generated thin oxide films on n-GaN

Journal of crystal growth, 2001-09, Vol.230 (3), p.602-606

2001

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Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

European physical journal. Applied physics, 2004-07, Vol.27 (1-3), p.271-273

2004

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HRTEM study of AlxGa1-xN/AlN DBR mirrors

Diamond and related materials, 2003-03, Vol.12 (3-7), p.1178-1181

2003

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics letters, 2001-05, Vol.37 (11), p.715-716

2001

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Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

Journal of electronic materials, 2003-05, Vol.32 (5), p.355-363

2003

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Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

Journal of electronic materials, 2001-05, Vol.30 (5), p.L17-L20

2001

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Smooth GaN surfaces by photoinduced electro-chemical etching

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.350-354

1999

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Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.255-258

2001

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Influence of Process Technology on DC-Performance of GaN-Based HFETs

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.452-455

2002

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Structural and Optical Characterization of InGaN Layers Grown by MOMBE

MRS proceedings, 2003, Vol.798, Article Y9.2

2003

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Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.299-303

2001

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Journal of crystal growth, 2000-06, Vol.216 (1-4), p.15-20

2000

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Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1)

Band Gap of Hexagonal InN and InGaN Alloys

Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Terahertz Scanner for Improved Wood Sorting from Bulky Waste

Photoluminescence, depth profile, and lattice instability of hexagonal InN films

Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys

First AlGaN/GaN MOSFET with photoanodic gate dielectric

Multi-Modal Image Acquisition for AI-Based Bulky Waste Sorting (Incl. Terahertz Synthetic Aperture Radar)

Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Point defects in gamma-irradiated n-GaN

Electrical properties of photoanodically generated thin oxide films on n-GaN

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

HRTEM study of AlxGa1-xN/AlN DBR mirrors

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

Smooth GaN surfaces by photoinduced electro-chemical etching

Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Influence of Process Technology on DC-Performance of GaN-Based HFETs

Structural and Optical Characterization of InGaN Layers Grown by MOMBE

Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

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