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Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport

Surface science, 2004-07, Vol.560 (1), p.L202-L206

2004

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Nanoscale GaN whiskers fabricated by photoelectrochemical etching

Journal of applied physics, 2004-11, Vol.96 (9), p.5185-5188

2004

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Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport

Journal of electronic materials, 2006-07, Vol.35 (7), p.1513-1517

2006

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Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN

Journal of crystal growth, 2002-12, Vol.246 (3), p.271-280

2002

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High temperature nucleation and growth of GaN crystals from the vapor phase

Journal of crystal growth, 2002-06, Vol.241 (4), p.404-415

2002

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Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

Journal of crystal growth, 2002-03, Vol.236 (4), p.529-537

2002

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Bias voltage dependent field-emission energy distribution analysis of wide band-gap field emitters

Journal of applied physics, 1997-12, Vol.82 (11), p.5763-5772

1997

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The growth and optical properties of large, high-quality AlN single crystals

Journal of applied physics, 2004-11, Vol.96 (10), p.5870-5876

2004

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Energy distribution of field emitted electrons from diamond coated molybdenum tips

Applied physics letters, 1997-03, Vol.70 (12), p.1596-1598

1997

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Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Materials science forum, 2012-05, Vol.717-720, p.1287-1290

2012

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Electron energy distribution during high-field transport in AlN

Journal of applied physics, 2003-03, Vol.93 (5), p.2765-2771

2003

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Hot electron transport in AlN

Journal of applied physics, 2000-11, Vol.88 (10), p.5865-5869

2000

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Polarity and morphology in seeded growth of bulk AlN on SiC

Physica status solidi. C, 2005-01, Vol.2 (7), p.2036-2039

2005

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Electron emission mechanism from cubic boron nitride-coated molybdenum emitters

Applied physics letters, 1998-06, Vol.72 (22), p.2909-2911

1998

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Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy

Physica status solidi. C, 2005-01, Vol.2 (7), p.2117-2120

2005

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Heteroepitaxial nucleation of diamond on nickel

Diamond and related materials, 1998-02, Vol.7 (2), p.276-282

1998

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Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules

Materials science forum, 2013-01, Vol.740-742, p.91-94

2013

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Control of diamond heteroepitaxy on nickel by optical reflectance

Applied physics letters, 1997-06, Vol.70 (22), p.2960-2962

1997

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Bulk AlN Crystal Growth on SiC Seeds and Defects Study

MRS proceedings, 2006, Vol.955, Article 0955-I03-07

2006

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Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Journal of electronic materials, 2014-04, Vol.43 (4)

2014

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Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior

Journal of applied physics, 1998-09, Vol.84 (6), p.3382-3385

1998

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Growth of High Quality AlN Single Crystals and Their Optical Properties

Physics of Semiconductors; Part A, 2005, Vol.772, p.211-212

2005

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Raman, photoluminescence and absorption studies on high quality AlN single crystals

Physica status solidi. C, 2005-05, Vol.2 (7), p.2774-2778

2005

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Surface melting in the heteroepitaxial nucleation of diamond on Ni

Journal of crystal growth, 1998-04, Vol.187 (1), p.81-88

1998

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Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere

MRS Internet journal of nitride semiconductor research, 2004-01, Vol.9, p.1-1, Article e2

2004

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Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport

Nanoscale GaN whiskers fabricated by photoelectrochemical etching

Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport

Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN

High temperature nucleation and growth of GaN crystals from the vapor phase

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

Bias voltage dependent field-emission energy distribution analysis of wide band-gap field emitters

The growth and optical properties of large, high-quality AlN single crystals

Energy distribution of field emitted electrons from diamond coated molybdenum tips

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

Electron energy distribution during high-field transport in AlN

Hot electron transport in AlN

Polarity and morphology in seeded growth of bulk AlN on SiC

Electron emission mechanism from cubic boron nitride-coated molybdenum emitters

Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy

Heteroepitaxial nucleation of diamond on nickel

Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules

Control of diamond heteroepitaxy on nickel by optical reflectance

Bulk AlN Crystal Growth on SiC Seeds and Defects Study

Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior

Growth of High Quality AlN Single Crystals and Their Optical Properties

Raman, photoluminescence and absorption studies on high quality AlN single crystals

Surface melting in the heteroepitaxial nucleation of diamond on Ni

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere

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