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Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

International journal of hydrogen energy, 2001-05, Vol.26 (5), p.483-488

2001

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Atomic order in magnetic Mn inclusions in Si crystals: XAS and TEM studies

Journal of non-crystalline solids, 2008-10, Vol.354 (35-39), p.4189-4192

2008

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Strain and defect engineering in Si/Si3N4/Si by high temperature–pressure treatment

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124-125, p.174-178

2005

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Phase separation in SiOx films annealed under enhanced hydrostatic pressure

Physica Status Solidi (b), 2008-12, Vol.245 (12), p.2756-2760

2008

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Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.157-159

2009

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Effect of pressure annealing on structure of Si:Mn

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.270-274

2006

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Validated HPTLC Method for Simultaneous Estimation of Atenolol and Aspirin in Bulk Drug and Formulation

ISRN analytical chemistry, 2012-02, Vol.2012, p.1-5

2012

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The structures prepared by high temperature–pressure treatment of Cz-Si heavily implanted with He

Journal of alloys and compounds, 2005-09, Vol.401 (1), p.231-237

2005

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Defects in Ge-doped Cz-Si annealed under high stress

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.82-87

2006

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Thermoelectric properties of high-pressure silicon phases

JETP letters, 2004-09, Vol.80 (6), p.405-409

2004

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Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen

Physica. B, Condensed matter, 2001-12, Vol.308, p.317-320

2001

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Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions

Journal of applied physics, 2002-02, Vol.91 (3), p.1198-1203

2002

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Pressure-induced transformations of nitrogen implanted into silicon

Physica status solidi. A, Applications and materials science, 2006-03, Vol.203 (4), p.781-785

2006

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Effect of enhanced pressure during annealing on the creation of defects in electron-irradiated silicon

Vacuum, 2005-03, Vol.77 (4), p.513-517

2005

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Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

Journal of materials science. Materials in electronics, 2007-07, Vol.18 (7), p.721-728

2007

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Structural and optical properties of high temperature–high pressure treated Si:H

Journal of alloys and compounds, 2004-11, Vol.382 (1-2), p.160-164

2004

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Defect structure in self-implanted silicon annealed under enhanced hydrostatic pressure - electron microscopy study

Physica status solidi. C, 2007-07, Vol.4 (8), p.3020-3024

2007

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Microstructure of Czochralski silicon implanted with deuterium and annealed under high pressure

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.687-691

2003

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Production and evolution of defects in neutron-irradiated Si subjected to thermal pre-treatments under hydrostatic pressure

Journal of physics. Condensed matter, 2005-06, Vol.17 (22), p.S2341-S2349

2005

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Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions

Journal of alloys and compounds, 2004-01, Vol.362 (1), p.275-281

2004

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Porous-like silicon prepared from Si:H annealed at high argon pressure

Physica status solidi. A, Applied research, 2003-05, Vol.197 (1), p.236-240

2003

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Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon

Journal of applied physics, 2003-10, Vol.94 (7), p.4363-4367

2003

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Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

Physica. B, Condensed matter, 2001-12, Vol.308, p.820-822

2001

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Structure of Oxygen - Implanted Silicon Single Crystals Treated at ≥1400 K under High Argon Pressure

Crystal research and technology (1979), 2001-10, Vol.36 (8-10), p.933-941

2001

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Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons

Physica status solidi. A, Applied research, 2003-09, Vol.199 (2), p.207-213

2003

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Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

Atomic order in magnetic Mn inclusions in Si crystals: XAS and TEM studies

Strain and defect engineering in Si/Si3N4/Si by high temperature–pressure treatment

Phase separation in SiOx films annealed under enhanced hydrostatic pressure

Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

Effect of pressure annealing on structure of Si:Mn

Validated HPTLC Method for Simultaneous Estimation of Atenolol and Aspirin in Bulk Drug and Formulation

The structures prepared by high temperature–pressure treatment of Cz-Si heavily implanted with He

Defects in Ge-doped Cz-Si annealed under high stress

Thermoelectric properties of high-pressure silicon phases

Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen

Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions

Pressure-induced transformations of nitrogen implanted into silicon

Effect of enhanced pressure during annealing on the creation of defects in electron-irradiated silicon

Infrared absorption spectra of defects in carbon doped neutron-irradiated Si

Structural and optical properties of high temperature–high pressure treated Si:H

Defect structure in self-implanted silicon annealed under enhanced hydrostatic pressure - electron microscopy study

Microstructure of Czochralski silicon implanted with deuterium and annealed under high pressure

Production and evolution of defects in neutron-irradiated Si subjected to thermal pre-treatments under hydrostatic pressure

Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions

Porous-like silicon prepared from Si:H annealed at high argon pressure

Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon

Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

Structure of Oxygen - Implanted Silicon Single Crystals Treated at ≥1400 K under High Argon Pressure

Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons

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