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InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

Electronics letters, 2004-09, Vol.40 (20), p.1304-1305

2004

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InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Journal of crystal growth, 2001-02, Vol.222 (4), p.701-705

2001

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Engineering and impact of surface states on AlGaN/GaN-based hetero field effect transistors

Semiconductor science and technology, 2005-09, Vol.20 (9), p.972-978

2005

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First AlGaN/GaN MOSFET with photoanodic gate dielectric

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.107-111

2002

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Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

Journal of crystal growth, 2001-09, Vol.230 (3), p.564-568

2001

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Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Journal of crystal growth, 2002-06, Vol.241 (4), p.535-542

2002

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Point defects in gamma-irradiated n-GaN

Semiconductor science and technology, 2000-01, Vol.15 (1), p.73-78

2000

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Electrical properties of photoanodically generated thin oxide films on n-GaN

Journal of crystal growth, 2001-09, Vol.230 (3), p.602-606

2001

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Impact of native oxides beneath the gate contact of AlGaN/GaN HFET devices

Physica status solidi. C, 2005-05, Vol.2 (7), p.2627-2630

2005

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics letters, 2001-05, Vol.37 (11), p.715-716

2001

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Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

Journal of electronic materials, 2003-05, Vol.32 (5), p.355-363

2003

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Electron Beam Pumped Nitride Vertical Cavity Surface Emitting Structures with AlGaN/AlN DBR Mirrors

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.428-432

2002

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Characteristics of InxAl1-xN-GaN high-electron mobility field-effect transistor

IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.146-150

2005

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Smooth GaN surfaces by photoinduced electro-chemical etching

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.350-354

1999

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Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.255-258

2001

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Influence of Process Technology on DC-Performance of GaN-Based HFETs

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.452-455

2002

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Journal of crystal growth, 2000-06, Vol.216 (1-4), p.15-20

2000

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Improved quality of plasma assisted MBE-grown GaN/AlGaN quantum wells revealed by two-wavelength excited photoluminescence

Physica status solidi. C, 2003-12 (7), p.2658-2661

2003

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Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

Journal of crystal growth, 2000-03, Vol.210 (1), p.273-277

2000

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Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces

ECS transactions, 2011, Vol.41 (3), p.325-334

2011

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Influence of pre-etching on specific contact parameters for metal-GaN contacts

Semiconductor science and technology, 1999-07, Vol.14 (7), p.637-641

1999

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Polarization engineering of InAlN/GaN HFET and the effect on DC and RF performance

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.1035-1038

2004

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InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Engineering and impact of surface states on AlGaN/GaN-based hetero field effect transistors

First AlGaN/GaN MOSFET with photoanodic gate dielectric

Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Point defects in gamma-irradiated n-GaN

Electrical properties of photoanodically generated thin oxide films on n-GaN

Impact of native oxides beneath the gate contact of AlGaN/GaN HFET devices

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

Electron Beam Pumped Nitride Vertical Cavity Surface Emitting Structures with AlGaN/AlN DBR Mirrors

Characteristics of InxAl1-xN-GaN high-electron mobility field-effect transistor

Smooth GaN surfaces by photoinduced electro-chemical etching

Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Influence of Process Technology on DC-Performance of GaN-Based HFETs

High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Improved quality of plasma assisted MBE-grown GaN/AlGaN quantum wells revealed by two-wavelength excited photoluminescence

Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces

Influence of pre-etching on specific contact parameters for metal-GaN contacts

Polarization engineering of InAlN/GaN HFET and the effect on DC and RF performance

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