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Highly Photosensitive Lead Sulfide Thin Films Grown by H2S Free MOCVD Using a Single Source Metal‐Organic Precursor

Small (Weinheim an der Bergstrasse, Germany), 2022-10, Vol.18 (40), p.n/a

2022

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Advanced materials (Weinheim), 2022-10, Vol.34 (41), p.n/a

2022

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Mesoporous Metal Fluoride Nanocomposite Films with Tunable Optical Properties Derived from Precursor Instability

Small (Weinheim an der Bergstrasse, Germany), 2023-10, Vol.19 (41), p.e2301395-e2301395

2023

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Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

Chemistry of materials, 2017-10, Vol.29 (19), p.8100-8110

2017

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Growth of p‑Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

Chemistry of materials, 2014-11, Vol.26 (21), p.6088-6091

2014

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Copper Oxide Buffer Layers by Pulsed‐Chemical Vapor Deposition for Semitransparent Perovskite Solar Cells

Advanced materials interfaces, 2021-01, Vol.8 (1), p.n/a

2021

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Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal‐Organic Chemical Vapor Deposition‐Grown GeSe2

Advanced optical materials, 2024-01, Vol.12 (2), p.n/a

2024

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Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N‑ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

ACS applied materials & interfaces, 2016-10, Vol.8 (40), p.26924-26931

2016

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Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device

Small (Weinheim an der Bergstrasse, Germany), 2017-10, Vol.13 (40), p.n/a

2017

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Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (12), p.3139-3145

2017

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Low-temperature wafer-scale synthesis of two-dimensional SnS2

Nanoscale, 2018-10, Vol.10 (37), p.17712-17721

2018

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Atomic Layer Deposition of Ru Thin Film Using a Newly Synthesized Precursor with Open‐Coordinated Ligands

Advanced materials interfaces, 2023-06, Vol.10 (17), p.n/a

2023

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Synthesis and characterization of Sn complexes containing aminoalkoxide ligands for solution process

Molecular Crystals and Liquid Crystals, 2023-07, Vol.760 (1), p.44-50

2023

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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Advanced materials (Weinheim), 2023-03, Vol.35 (13), p.n/a

2023

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Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-03, Vol.9 (11), p.382-3825

2021

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Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition

Journal of the Electrochemical Society, 2011, Vol.158 (1), p.D1

2011

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Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings (Basel), 2020-07, Vol.10 (7), p.692

2020

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Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO2‐Based Resistive Switching Device

Advanced electronic materials, 2018-12, Vol.4 (12), p.n/a

2018

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Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications

ACS applied materials & interfaces, 2024-04, Vol.16 (18), p.23606-23614

2024

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Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-12, Vol.41 (6)

2023

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High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

ACS applied materials & interfaces, 2019-04, Vol.11 (16), p.14892-14901

2019

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Highly efficient photocatalytic methylene blue degradation over Sn(O,S)/TiO2 photocatalyst fabricated via powder atomic layer deposition of SnO and subsequent sulfurization

Materials letters, 2020-08, Vol.272, p.127868, Article 127868

2020

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Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO2 detection at room temperature

Journal of materials chemistry. A, Materials for energy and sustainability, 2022-03, Vol.10 (9), p.4711-4719

2022

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Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis(N-ethoxy-2,2-dimethyl propanamido)tin precursor

Ceramics international, 2019-03, Vol.45 (4), p.5124-5132

2019

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Simultaneous etching of underlying metal oxide and sulfide thin films during Cu2S atomic layer deposition

Applied surface science, 2020-09, Vol.524, p.146452, Article 146452

2020

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Highly Photosensitive Lead Sulfide Thin Films Grown by H2S Free MOCVD Using a Single Source Metal‐Organic Precursor

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Mesoporous Metal Fluoride Nanocomposite Films with Tunable Optical Properties Derived from Precursor Instability

Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

Growth of p‑Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

Copper Oxide Buffer Layers by Pulsed‐Chemical Vapor Deposition for Semitransparent Perovskite Solar Cells

Anomalous Temperature and Polarization Dependences of Photoluminescence of Metal‐Organic Chemical Vapor Deposition‐Grown GeSe2

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N‑ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device

Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

Low-temperature wafer-scale synthesis of two-dimensional SnS2

Atomic Layer Deposition of Ru Thin Film Using a Newly Synthesized Precursor with Open‐Coordinated Ligands

Synthesis and characterization of Sn complexes containing aminoalkoxide ligands for solution process

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity

Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Optimized Method for Low‐Energy and Highly Reliable Multibit Operation in a HfO2‐Based Resistive Switching Device

Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications

Ternary Ga–Sn–O and quaternary In–Ga–Sn–O channel based thin film transistors fabricated by plasma-enhanced atomic layer deposition

High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

Highly efficient photocatalytic methylene blue degradation over Sn(O,S)/TiO2 photocatalyst fabricated via powder atomic layer deposition of SnO and subsequent sulfurization

Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO2 detection at room temperature

Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis(N-ethoxy-2,2-dimethyl propanamido)tin precursor

Simultaneous etching of underlying metal oxide and sulfide thin films during Cu2S atomic layer deposition

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