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Design and fabrication of ultrathin silicon-based strain gauges for piezoresistive pressure sensor

Current applied physics, 2025-01, Vol.69, p.28-35

2025

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Improved SOI-MESFET structures for enhanced efficiency and optimized DC/RF characteristics

International journal of electronics, 2024-12, Vol.111 (12), p.2242-2262

2024

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The Self in the Consulting Room1

Journal of analytical psychology, 2024-11, Vol.69 (5), p.855-873

Stein, Leslie

2024

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Reliability of Tunneling Regime for Silicon on Insulator-Based Neuron

IEEE transactions on electron devices, 2024-11, Vol.71 (11), p.6514-6519

2024

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Disputed Boundaries of the Self, the Group, and their Environment: What We Learn from Refugees about our Psychic Functioning1

Journal of analytical psychology, 2024-11, Vol.69 (5), p.768-787

Luci, Monica

2024

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Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology

IEEE transactions on electron devices, 2024-11, Vol.71 (11), p.7208-7212

2024

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SOI Lateral Hall Device With Deep Trench Fingers for High Sensitivity and Low Offset

IEEE electron device letters, 2024-11, Vol.45 (11), p.2166-2169

2024

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Gate-voltage control of waveguide-coupled lateral Ge-on-Si APD for 1550 nm detection

IEEE sensors journal, 2024-10, p.1-1

2024

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Single event effect mechanism study in 130nm fully depleted SOI technology devices

IEICE Electronics Express, 2024-10, Vol.21 (19), p.20240434-20240434, Article 21.20240434

2024

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Extraction of Package Related Stress Effects in 180 nm SOI Technology

2024 International Semiconductor Conference (CAS), 2024, p.115-118

2024

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Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Advanced functional materials, 2024-10, Vol.34 (41), p.n/a

2024

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Novel SOI-MESFET for High-Frequency Operations: Improving Electric Field Distribution

Brazilian journal of physics, 2024-10, Vol.54 (5), Article 194

2024

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A Second-Order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology

IEEE electron device letters, 2024-10, Vol.45 (10), p.1710-1713

2024

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A Compact 48-63 GHz 3-dB Transformer-Based Quadrature Coupler With Arbitrary Transformer Coupling Coefficient in 22-nm CMOS FDSOI

IEEE microwave and wireless technology letters (Print), 2024-10, Vol.34 (10), p.1155-1157

2024

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Uncovering personal meaning construction through occupation from a psychoanalytic perspective

Journal of occupational science, 2024-10, Vol.31 (4), p.648-657

Maersk, Jesper Larsen

2024

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High-sensitivity and wide-range refractive index sensing based on the envelope spectrum of the subwavelength grating waveguide racetrack microring resonator

Optics letters, 2024-10, Vol.49 (19), p.5603

2024

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12 GHz Stacked Power Amplifier with 22.9 dBm Psat and 44.9% PAEsat for 6G in 22nm FDSOI

2024 19th European Microwave Integrated Circuits Conference (EuMIC), 2024, p.62-65

2024

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A Tunable Optical 90° Hybrid Coupler in SOI for Wavelength-Independent Coherent Receivers

Proceedings (International Topical Meeting on Microwave Photonics. Online), 2024, p.1-4

2024

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P-type Extended Drain MOSFET integration on thin SOI

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.9-12

2024

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Low-frequency Noise Performance of pMOS SOI Transistors for Analog Applications

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.452-455

2024

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Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.165-168

2024

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Analysis of hot carrier instability in a floating body cell

Japanese Journal of Applied Physics, 2024-09, Vol.63 (9), p.94002

2024

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Investigation of recessed‐source/drain SOI feedback FET‐based integrate and fire neuron circuit with compact model of threshold switching devices

International journal of numerical modelling, 2024-09, Vol.37 (5), p.n/a

2024

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Modeling of Threshold Voltage Degradation of 22nm FD-SOI nMOSFETs Under Dynamic Voltage Scaling

IEEE transactions on device and materials reliability, 2024-09, Vol.24 (3), p.463-465

2024

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Design and fabrication of ultrathin silicon-based strain gauges for piezoresistive pressure sensor

Improved SOI-MESFET structures for enhanced efficiency and optimized DC/RF characteristics

The Self in the Consulting Room1

Reliability of Tunneling Regime for Silicon on Insulator-Based Neuron

Disputed Boundaries of the Self, the Group, and their Environment: What We Learn from Refugees about our Psychic Functioning1

Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology

SOI Lateral Hall Device With Deep Trench Fingers for High Sensitivity and Low Offset

Gate-voltage control of waveguide-coupled lateral Ge-on-Si APD for 1550 nm detection

Single event effect mechanism study in 130nm fully depleted SOI technology devices

Extraction of Package Related Stress Effects in 180 nm SOI Technology

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Novel SOI-MESFET for High-Frequency Operations: Improving Electric Field Distribution

A Second-Order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology

A Compact 48-63 GHz 3-dB Transformer-Based Quadrature Coupler With Arbitrary Transformer Coupling Coefficient in 22-nm CMOS FDSOI

Uncovering personal meaning construction through occupation from a psychoanalytic perspective

High-sensitivity and wide-range refractive index sensing based on the envelope spectrum of the subwavelength grating waveguide racetrack microring resonator

12 GHz Stacked Power Amplifier with 22.9 dBm Psat and 44.9% PAEsat for 6G in 22nm FDSOI

A Tunable Optical 90° Hybrid Coupler in SOI for Wavelength-Independent Coherent Receivers

P-type Extended Drain MOSFET integration on thin SOI

Low-frequency Noise Performance of pMOS SOI Transistors for Analog Applications

Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate

Analysis of hot carrier instability in a floating body cell

Investigation of recessed‐source/drain SOI feedback FET‐based integrate and fire neuron circuit with compact model of threshold switching devices

Modeling of Threshold Voltage Degradation of 22nm FD-SOI nMOSFETs Under Dynamic Voltage Scaling

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