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Low-Loss, Extreme Subdiffraction Photon Confinement via Silicon Carbide Localized Surface Phonon Polariton Resonators

Nano letters, 2013-08, Vol.13 (8), p.3690-3697

2013

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Active tuning of surface phonon polariton resonances via carrier photoinjection

Nature photonics, 2018-01, Vol.12 (1), p.50-56

2018

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Phonon-Polaritonic Bowtie Nanoantennas: Controlling Infrared Thermal Radiation at the Nanoscale

ACS photonics, 2017-07, Vol.4 (7), p.1753-1760

2017

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Hybrid longitudinal-transverse phonon polaritons

Nature communications, 2019-04, Vol.10 (1), p.1682-1682, Article 1682

2019

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Spectral Tuning of Localized Surface Phonon Polariton Resonators for Low-Loss Mid-IR Applications

ACS photonics, 2014-08, Vol.1 (8), p.718-724

2014

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Enhanced Absorption with Graphene-Coated Silicon Carbide Nanowires for Mid-Infrared Nanophotonics

Nanomaterials (Basel, Switzerland), 2021-09, Vol.11 (9), p.2339

2021

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Remarkable heat conduction mediated by non-equilibrium phonon polaritons

Nature (London), 2023-11, Vol.623 (7986), p.307-312

2023

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Launching and Manipulation of Higher‐Order In‐Plane Hyperbolic Phonon Polaritons in Low‐Dimensional Heterostructures

Advanced materials (Weinheim), 2023-06, Vol.35 (22), p.e2300301-n/a

2023

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Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide

Nano letters, 2024-01, Vol.24 (1), p.114-121

2024

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Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Advanced functional materials, 2020-03, Vol.30 (10), p.n/a

2020

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Towards low- loss on-chip nanophotonics with coupled graphene and silicon carbide: a review

JPhys materials, 2020-07, Vol.3 (3), p.32005

2020

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Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers

Journal of electronic materials, 2011-04, Vol.40 (4), p.413-418

2011

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Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes

Journal of electronic materials, 2008-05, Vol.37 (5), p.699-705

2008

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Aspect-ratio driven evolution of high-order resonant modes and near-field distributions in localized surface phonon polariton nanostructures

Scientific reports, 2016-09, Vol.6 (1), p.32959, Article 32959

2016

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Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes

Journal of electronic materials, 2007-04, Vol.36 (4), p.318-323

2007

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Theoretical analysis of graphene plasmon cavities

Applied materials today, 2018-09, Vol.12, p.283-293

2018

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Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

Materials science forum, 2009-01, Vol.600-603, p.345-348

2009

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Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Materials science forum, 2009-01, Vol.615-617, p.719-722

2009

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Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

MRS proceedings, 2010-01, Vol.1246 (1), Article 1246-B04-06

2010

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Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy

Journal of electronic materials, 2007-04, Vol.36 (4), p.297-306

2007

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Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Materials science forum, 2009, Vol.600-603, p.273-278

2009

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Dry Techniques for Epitaxial Graphene Transfer

MRS proceedings, 2010, Vol.1259 (1), Article 1259-S18-05

2010

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Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Materials science forum, 2012, Vol.717-720, p.1013-1016

2012

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Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

2007 International Semiconductor Device Research Symposium, 2007, p.1-2

2007

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IEEE_Xplore

Extended defects that affect carrier lifetime in high blocking voltage SiC epilayers

2011 International Semiconductor Device Research Symposium (ISDRS), 2011, p.1-2

2011

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IEEE_Xplore

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Low-Loss, Extreme Subdiffraction Photon Confinement via Silicon Carbide Localized Surface Phonon Polariton Resonators

Active tuning of surface phonon polariton resonances via carrier photoinjection

Phonon-Polaritonic Bowtie Nanoantennas: Controlling Infrared Thermal Radiation at the Nanoscale

Hybrid longitudinal-transverse phonon polaritons

Spectral Tuning of Localized Surface Phonon Polariton Resonators for Low-Loss Mid-IR Applications

Enhanced Absorption with Graphene-Coated Silicon Carbide Nanowires for Mid-Infrared Nanophotonics

Remarkable heat conduction mediated by non-equilibrium phonon polaritons

Launching and Manipulation of Higher‐Order In‐Plane Hyperbolic Phonon Polaritons in Low‐Dimensional Heterostructures

Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Towards low- loss on-chip nanophotonics with coupled graphene and silicon carbide: a review

Structure and Morphology of Inclusions in 4° Offcut 4H-SiC Epitaxial Layers

Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes

Aspect-ratio driven evolution of high-order resonant modes and near-field distributions in localized surface phonon polariton nanostructures

Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes

Theoretical analysis of graphene plasmon cavities

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors

Recent Developments in SiC Homoepitaxy Using Dichlorosilane for High Power Devices

Photoluminescence and Electroluminescence Imaging of Carrot Defect in 4H-SiC Epitaxy

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Dry Techniques for Epitaxial Graphene Transfer

Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors

Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs

Extended defects that affect carrier lifetime in high blocking voltage SiC epilayers

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