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Lifetime Studies of 130 nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.1757-1766

2012

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Increasing the signal-to-noise ratio of magnetic tunnel junctions by cryogenic preamplification

Journal of applied physics, 2019-04, Vol.125 (16)

2019

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The revolution in SiGe: impact on device electronics

Applied surface science, 2004-03, Vol.224 (1), p.9-17

2004

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Low-power and low-voltage X-band silicon-germanium heterojunction bipolar transistor low-noise amplifier

IET microwaves, antennas & propagation, 2012-09, Vol.6 (12), p.1325-1331

2012

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5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

IET microwaves, antennas & propagation, 2008-02, Vol.2 (1), p.19-22

2008

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Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.1931-1937

2007

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A unified approach to RF and microwave noise parameter modeling in bipolar transistors

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2568-2574

2001

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SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

IEEE transactions on microwave theory and techniques, 1998-05, Vol.46 (5), p.572-589

Cressler, J.D.

1998

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Investigation of single-event transients in voltage-controlled oscillators

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.2081-2087

2003

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Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology

IEEE transactions on microwave theory and techniques, 2006-03, Vol.54 (3), p.1262-1268

2006

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Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

Physical review applied, 2017-08, Vol.8 (2), Article 024015

2017

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Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

IEEE transactions on microwave theory and techniques, 2005-01, Vol.53 (1), p.81-93

2005

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Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24-GeV Proton Exposure

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3889-3893

2006

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Multiple-Bit Upset in 130 nm CMOS Technology

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3259-3264

2006

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The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation

IEEE transactions on microwave theory and techniques, 2006-04, Vol.54 (4), p.1687-1697

2006

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Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3469-3476

2009

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Transistor noise in SiGe HBT RF technology

IEEE journal of solid-state circuits, 2001-09, Vol.36 (9), p.1424-1427

2001

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Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3078-3084

2009

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Nuclear microbeam studies of silicon–germanium heterojunction bipolar transistors (HBTs)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-06, Vol.268 (11), p.2092-2098

2010

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A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3393-3401

2009

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An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3166-3174

2006

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Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3298-3305

2006

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The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3256-3261

2009

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A Mechanism Versus SEU Impact Analysis of Collector Charge Collection in SiGe HBT Current Mode Logic

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3071-3077

2009

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Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3400-3407

2006

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Lifetime Studies of 130 nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments

Increasing the signal-to-noise ratio of magnetic tunnel junctions by cryogenic preamplification

The revolution in SiGe: impact on device electronics

Low-power and low-voltage X-band silicon-germanium heterojunction bipolar transistor low-noise amplifier

5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

Investigation of single-event transients in voltage-controlled oscillators

Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology

Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24-GeV Proton Exposure

Multiple-Bit Upset in 130 nm CMOS Technology

The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation

Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits

Transistor noise in SiGe HBT RF technology

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

Nuclear microbeam studies of silicon–germanium heterojunction bipolar transistors (HBTs)

A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT

An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI

A Mechanism Versus SEU Impact Analysis of Collector Charge Collection in SiGe HBT Current Mode Logic

Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits

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