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Ionizing Radiation Effects in Electronics: From Memories to Imagers

1, 2018

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2020 IEEE Nuclear and Space Radiation Effects Conference Awards: Comments by the Chair

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.495-496

Bagatin, Marta

2021

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Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.464-470

2017

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Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1835-1841

2010

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Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2824-2829

2011

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Total Ionizing Dose Effects in 3-D NAND Replacement Gate Flash Memory Cells

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.412-417

2024

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Total Ionizing Dose Effects in 3D NAND Replacement Gate Flash Memory Cells

IEEE transactions on nuclear science, 2023-11, p.1-1

2023

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Total Ionizing Dose Effects in 3-D NAND Flash Memories

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.48-53

2019

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Single Event Effects in 3-D NAND Flash Memory Cells With Replacement Gate Technology

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.308-313

2023

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Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.1-1

2024

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Atmospheric-Like Neutron Attenuation During Accelerated Neutron Testing With Multiple Printed Circuit Boards

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1830-1834

2018

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A Heavy-Ion Detector Based on 3-D NAND Flash Memories

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.154-160

2020

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Impact of NBTI Aging on the Single-Event Upset of SRAM Cells

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3245-3250

2010

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Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

Electronics (Basel), 2023-02, Vol.12 (3), p.543

2023

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Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2899-2905

2015

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TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

IEEE transactions on nuclear science, 2022-07, Vol.69 (7), p.1444-1452

2022

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Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.969-974

2011

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Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2889-2895

2014

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Sensitive Volume and Extreme Shifts in Floating Gate Cells Irradiated with Heavy Ions

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2815-2821

2015

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Total Ionizing Dose Effects in Si-Based Tunnel FETs

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2874-2880

2014

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Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

IEEE transactions on nuclear science, 2016-12, Vol.63 (6), p.2950-2961

2016

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Increase in the Heavy-Ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3407-3413

2010

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Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3302-3308

2008

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Heavy-Ion Induced Threshold Voltage Shifts in Sub 70-nm Charge-Trap Memory Cells

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.827-833

2011

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Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1777-1784

2014

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Ionizing Radiation Effects in Electronics: From Memories to Imagers

2020 IEEE Nuclear and Space Radiation Effects Conference Awards: Comments by the Chair

Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence

Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells

Total Ionizing Dose Effects in 3-D NAND Replacement Gate Flash Memory Cells

Total Ionizing Dose Effects in 3D NAND Replacement Gate Flash Memory Cells

Total Ionizing Dose Effects in 3-D NAND Flash Memories

Single Event Effects in 3-D NAND Flash Memory Cells With Replacement Gate Technology

Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

Atmospheric-Like Neutron Attenuation During Accelerated Neutron Testing With Multiple Printed Circuit Boards

A Heavy-Ion Detector Based on 3-D NAND Flash Memories

Impact of NBTI Aging on the Single-Event Upset of SRAM Cells

Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose

TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells

Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories

Sensitive Volume and Extreme Shifts in Floating Gate Cells Irradiated with Heavy Ions

Total Ionizing Dose Effects in Si-Based Tunnel FETs

Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Increase in the Heavy-Ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID

Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions

Heavy-Ion Induced Threshold Voltage Shifts in Sub 70-nm Charge-Trap Memory Cells

Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation

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