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Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency

Journal of applied physics, 2020-08, Vol.128 (5)

2020

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Hot-electron energy relaxation time in Ga-doped ZnO films

Journal of applied physics, 2015-02, Vol.117 (6)

2015

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Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure

Applied physics letters, 2021-06, Vol.118 (25)

2021

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Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

Semiconductor science and technology, 2015-03, Vol.30 (3), p.35003

2015

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ANALYSIS OF BIOLOGICAL OBJECTS BY DIGITAL OPTICAL MICROSCOPY USING NEURAL NETWORKS

Bulletin of the Lebedev Physics Institute, 2021-10, Vol.48 (10), p.332-336

2021

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Hot LO-phonon limited electron transport in ZnO/MgZnO channels

Journal of applied physics, 2018-05, Vol.123 (17)

2018

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Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels

Semiconductor science and technology, 2015-10, Vol.30 (10), p.105016

2015

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Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Applied physics letters, 2011-07, Vol.99 (4), p.043501-043501-3

2011

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Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel

Semiconductor science and technology, 2012-12, Vol.27 (12), p.122001

2012

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Window for better reliability of nitride heterostructure field effect transistors

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2149-2152

2012

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Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

Semiconductor science and technology, 2013-05, Vol.28 (5), p.55008

2013

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Experiments on hot electron noise in semiconductor materials for high-speed devices

IEEE transactions on electron devices, 1994-11, Vol.41 (11), p.2050-2060

1994

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Hot Phonons in a Biased Two-Dimensional InGaAs Channel

Acta physica Polonica, A, 2005-02, Vol.107 (2), p.304-309

2005

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Hot-electron velocity fluctuations in two-dimensional electron gas channels

Microelectronics and reliability, 2000-11, Vol.40 (11), p.1803-1814

2000

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Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

Applied physics letters, 1999-03, Vol.74 (13), p.1895-1897

1999

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Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode

Applied physics letters, 1998-10, Vol.73 (17), p.2488-2490

1998

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Energy Relaxation Time and Microwave Noise in InAs/AlSb/GaSb/GaAs Heterostructures

Materials science forum, 2002-01, Vol.384-385, p.117-120

2002

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QW-Shape-Dependent Hot-Electron Velocity Fluctuations in InGaAs-Based Heterostructures

physica status solidi (b), 1997-11, Vol.204 (1), p.453-455

1997

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Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels

Materials science forum, 1999-01, Vol.297-298, p.155-158

1999

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Transverse tunnelling time constant estimated from hot-electron noise in GaAs-based heterostructure

Solid state communications, 1996, Vol.98 (11), p.991-995

1996

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Comparative analysis of microwave noise in GaAs and AlGaAs/GaAs channels

Solid-state electronics, 1993-09, Vol.36 (9), p.1339-1343

1993

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Hot-electron noise and diffusion in AlGaAs/GaAs

Semiconductor science and technology, 1994-05, Vol.9 (5S), p.576-579

1994

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Effect of hydrogen on hot electron noise in short samples of GaAs

Semiconductor science and technology, 1993-10, Vol.8 (10), p.1829-1833

1993

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Length dependent hot electron noise in doped GaAs

Solid-state electronics, 1989-12, Vol.32 (12), p.1647-1650

1989

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Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency

Hot-electron energy relaxation time in Ga-doped ZnO films

Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure

Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation

Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

ANALYSIS OF BIOLOGICAL OBJECTS BY DIGITAL OPTICAL MICROSCOPY USING NEURAL NETWORKS

Hot LO-phonon limited electron transport in ZnO/MgZnO channels

Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels

Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel

Window for better reliability of nitride heterostructure field effect transistors

Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

Experiments on hot electron noise in semiconductor materials for high-speed devices

Hot Phonons in a Biased Two-Dimensional InGaAs Channel

Hot-electron velocity fluctuations in two-dimensional electron gas channels

Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode

Energy Relaxation Time and Microwave Noise in InAs/AlSb/GaSb/GaAs Heterostructures

QW-Shape-Dependent Hot-Electron Velocity Fluctuations in InGaAs-Based Heterostructures

Dependence of Electron Energy Relaxation on Lattice Strain in InGaAs 2DEG Channels

Transverse tunnelling time constant estimated from hot-electron noise in GaAs-based heterostructure

Comparative analysis of microwave noise in GaAs and AlGaAs/GaAs channels

Hot-electron noise and diffusion in AlGaAs/GaAs

Effect of hydrogen on hot electron noise in short samples of GaAs

Length dependent hot electron noise in doped GaAs

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