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Application of impedance technique to OELD

Thin solid films, 2000-03, Vol.363 (1), p.236-239

2000

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Photothermoelectric Effects in Nanoporous Silicon

Advanced materials (Weinheim), 2016-04, Vol.28 (13), p.2644-2648

2016

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Sulphonated rice husk biochar for in-situ methanolysis of fatty acid methyl ester from H. ILLUCENS

AIP Conference Proceedings, 2018, Vol.2020 (1)

2018

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Effective dispersion of graphene nanoplatelets in epoxy grout for pipeline rehabilitation

AIP Conference Proceedings, 2018, Vol.2020 (1)

2018

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The study of the charge collection of the normal-collector configuration

Progress in photovoltaics, 2013-08, Vol.21 (5), p.986-995

2013

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An Analytical Expression for Charge Collection Probability From Within a U-Shaped Junction Well

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.3068-3073

2010

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A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem

IEEE transactions on electron devices, 2010-10, Vol.57 (10), p.2455-2461

2010

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Rational Color Tuning and Luminescent Properties of Functionalized Boron-Containing 2-Pyridyl Pyrrolide Complexes

Advanced functional materials, 2005-04, Vol.15 (4), p.567-574

2005

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Shadow-evaporated nanometre-sized gaps and their use in electrical studies of nanocrystals

Nanotechnology, 2005-06, Vol.16 (6), p.631-634

2005

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Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices

IEEE transactions on electron devices, 2006, Vol.53 (1), p.63-70

2006

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In -rich In1−xGaxN films by metalorganic vapor phase epitaxy

Applied physics letters, 2004-12, Vol.85 (25), p.6131-6133

2004

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Blue, Green and White InGaN Light-Emitting Diodes Grown on Si

Japanese Journal of Applied Physics, 2005-01, Vol.44 (1L), p.L140

2005

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Numerical Predictions of Thermal Convection in a Rectangular Enclosure with Oscillating Wall

Numerical heat transfer. Part A, Applications, 2005-11, Vol.48 (8), p.791-809

2005

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Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices

Applied physics letters, 2005-05, Vol.86 (21)

2005

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Push-pull porphyrins as nonlinear optical materials

Journal of the American Chemical Society, 1992-08, Vol.114 (17), p.6928-6930

1992

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High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method

Journal of crystal growth, 2005-04, Vol.277 (1-4), p.44-50

2005

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Highly Stereospecific Epimerization of α-Amino Acids: Conducted Tour Mechanism

Journal of organic chemistry, 2003-08, Vol.68 (17), p.6571-6575

2003

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Improved electrical and surface characteristics of metal-oxide-semiconductor device with gate hafnium oxynitride by chemical dry etching

Solid-state electronics, 2006-02, Vol.50 (2), p.103-108

2006

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Effects of denuded zone of Si(111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal-oxide-semiconductor devices

Applied physics letters, 2004-11, Vol.85 (20), p.4723-4725

2004

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PRESSURE EFFECTS ON NATURAL CONVECTION FOR NON-BOUSSINESQ FLUID IN A RECTANGULAR ENCLOSURE

Numerical heat transfer. Part A, Applications, 2002-04, Vol.41 (5), p.515-528

2002

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Comparison on the effects of defects at Si(111) and Si(100) surface on electrical characteristics of MOS devices with HfOxNy gate dielectric

Microelectronic engineering, 2005-06, Vol.80, p.214-217

2005

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High mobility InN films grown by metal-organic vapor phase epitaxy

Physica status solidi. C, 2004-09, Vol.1 (10), p.2559-2563

2004

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PHYSICAL AND RELIABILITY CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR DEVICES WITH HfOxNy GATE DIELECTRICS ON DIFFERENT SURFACE-ORIENTED SUBSTRATES

Jpn.J.Appl.Phys ,Part 2. Vol. 43, no. 5A, pp. L599-L601. 2004, 2004-05, Vol.43 (5A), p.L599-L601

2004

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Real time interferometric ellipsometry with optical heterodyne and phase lock-in techniques

Applied Optics, 1990-12, Vol.29 (34), p.5159

1990

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The Effect of Microstructure on the Fracture Resistance of Nb-Cr-Ti in Situ Composites

Scripta materialia, 1998-03, Vol.38 (7), p.1155-1161

1998

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Application of impedance technique to OELD

Photothermoelectric Effects in Nanoporous Silicon

Sulphonated rice husk biochar for in-situ methanolysis of fatty acid methyl ester from H. ILLUCENS

Effective dispersion of graphene nanoplatelets in epoxy grout for pipeline rehabilitation

The study of the charge collection of the normal-collector configuration

An Analytical Expression for Charge Collection Probability From Within a U-Shaped Junction Well

A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem

Rational Color Tuning and Luminescent Properties of Functionalized Boron-Containing 2-Pyridyl Pyrrolide Complexes

Shadow-evaporated nanometre-sized gaps and their use in electrical studies of nanocrystals

Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices

In -rich In1−xGaxN films by metalorganic vapor phase epitaxy

Blue, Green and White InGaN Light-Emitting Diodes Grown on Si

Numerical Predictions of Thermal Convection in a Rectangular Enclosure with Oscillating Wall

Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices

Push-pull porphyrins as nonlinear optical materials

High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method

Highly Stereospecific Epimerization of α-Amino Acids: Conducted Tour Mechanism

Improved electrical and surface characteristics of metal-oxide-semiconductor device with gate hafnium oxynitride by chemical dry etching

Effects of denuded zone of Si(111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal-oxide-semiconductor devices

PRESSURE EFFECTS ON NATURAL CONVECTION FOR NON-BOUSSINESQ FLUID IN A RECTANGULAR ENCLOSURE

Comparison on the effects of defects at Si(111) and Si(100) surface on electrical characteristics of MOS devices with HfOxNy gate dielectric

High mobility InN films grown by metal-organic vapor phase epitaxy

PHYSICAL AND RELIABILITY CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR DEVICES WITH HfOxNy GATE DIELECTRICS ON DIFFERENT SURFACE-ORIENTED SUBSTRATES

Real time interferometric ellipsometry with optical heterodyne and phase lock-in techniques

The Effect of Microstructure on the Fracture Resistance of Nb-Cr-Ti in Situ Composites

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