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Study of degradation mechanism of blue light emitting diodes

Thin solid films, 2005-07, Vol.483 (1), p.378-381

2005

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Direct observation of interface effects of thin AlAs(100) layers buried in GaAs

Applied surface science, 2000-10, Vol.166 (1), p.309-312

2000

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Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering

Thin solid films, 2005-01, Vol.471 (1), p.336-341

2005

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Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Applied surface science, 2004-03, Vol.226 (4), p.331-334

2004

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Diffusion of nitrogen in gallium arsenide

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.367-370

2003

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Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Physica. B, Condensed matter, 2001-12, Vol.308-310, p.93-97

2001

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Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy

Solid-state electronics, 2003-03, Vol.47 (3), p.539-542

2003

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Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN

Superlattices and microstructures, 2012-07, Vol.52 (1), p.70-77

2012

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Nanocrystals at MBE-grown GaN/GaAs(001) interfaces

Applied surface science, 2000-10, Vol.166 (1), p.317-321

2000

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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Physical review. B, Condensed matter, 1995-09, Vol.52 (12), p.R8643-R8645

1995

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Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.685-688

1999

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Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE

Applied surface science, 2000-10, Vol.166 (1), p.423-427

2000

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Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs

Applied surface science, 2000-10, Vol.166 (1-4), p.259-262

2000

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Optical characterization of MBE-grown GaNAs

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.153-156

1997

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Properties of Si δ-layers embedded in GaAs

Physica. E, Low-dimensional systems & nanostructures, 1998-07, Vol.2 (1), p.247-251

1998

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Resonant tunneling through a pseudo-quantum well in single-barrier heterostructure

Surface science, 1996-01, Vol.361, p.213-216

1996

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On the carrier lifetime in periodically delta -doped GaAs

Semiconductor science and technology, 1994-12, Vol.9 (12), p.2190-2194

1994

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Sputter profiling of AlGaAs/GaAs superlattice structures using oxygen and argon ions

Applied surface science, 1993-01, Vol.70 (1-4), p.40-43

1993

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Correlation effects in magnetoluminescence spectra from dense quasi-2D electron gas in selectively doped InGaAs/GaAs quantum wells

Solid-state electronics, 1994-04, Vol.37 (4), p.725-728

1994

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Many-body effects in dense electron-hole plasma in InGaAs QWs with simple and complex valence band

Surface science, 1992-02, Vol.263 (1), p.457-461

1992

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Band edge offsets in strained (InGa)As-(AlGa)As heterostructures

Solid state communications, 1987-10, Vol.64 (3), p.379-382

1987

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Temperature and reconstruction dependence of the initial Al growth on GaAs(001)

Surface science, 1982-10, Vol.122 (1), p.55-68

1982

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Photoluminescence of the residual shallow acceptor in InxGa1-xAs grown on GaAs(001) by molecular beam epitaxy

Solid state communications, 1989-05, Vol.70 (5), p.505-509

1989

Volltextzugriff (PDF)

The influence of the background on the Auger signal in studies of film growth

Thin solid films, 1981-09, Vol.83 (2), p.L147-L149

Andersson, T.G.

1981

Volltextzugriff (PDF)

The initial growth of Au on GaAs(001)-c(4 × 4)

Surface science, 1981-09, Vol.110 (1), p.L583-L586

1981

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Study of degradation mechanism of blue light emitting diodes

Direct observation of interface effects of thin AlAs(100) layers buried in GaAs

Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering

Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

Diffusion of nitrogen in gallium arsenide

Characterization of AlxGa1−xN layers grown by molecular beam epitaxy

Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy

Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN

Nanocrystals at MBE-grown GaN/GaAs(001) interfaces

Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Self-diffusion on the arsenic sublattice in GaAs investigated by the broadening of buried nitrogen doping layers

Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE

Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs

Optical characterization of MBE-grown GaNAs

Properties of Si δ-layers embedded in GaAs

Resonant tunneling through a pseudo-quantum well in single-barrier heterostructure

On the carrier lifetime in periodically delta -doped GaAs

Sputter profiling of AlGaAs/GaAs superlattice structures using oxygen and argon ions

Correlation effects in magnetoluminescence spectra from dense quasi-2D electron gas in selectively doped InGaAs/GaAs quantum wells

Many-body effects in dense electron-hole plasma in InGaAs QWs with simple and complex valence band

Band edge offsets in strained (InGa)As-(AlGa)As heterostructures

Temperature and reconstruction dependence of the initial Al growth on GaAs(001)

Photoluminescence of the residual shallow acceptor in InxGa1-xAs grown on GaAs(001) by molecular beam epitaxy

The influence of the background on the Auger signal in studies of film growth

The initial growth of Au on GaAs(001)-c(4 × 4)

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