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Improvement of the intrinsic time resolving power of the Cologne iron-free orange type electron spectrometers

Review of scientific instruments, 2010-11, Vol.81 (11), p.113505-113505-7

2010

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Nuclear structure analysis using the Orange Spectrometer

AIP conference proceedings, 2009, Vol.1090 (1)

2009

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Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Applied physics letters, 2024-02, Vol.124 (6)

2024

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Probing oxygen vacancy concentration and homogeneity in solid-oxide fuel-cell cathode materials on the subunit-cell level

Nature materials, 2012-10, Vol.11 (10), p.888-894

2012

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The effect of injection properties of contacts on the dynamics of unipolar space-charge limited currents

IEEE transactions on dielectrics and electrical insulation, 2016-12, Vol.23 (6), p.3712-3724

Christen, Thomas

2016

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HVDC insulation boundary conditions for modeling and simulation

IEEE transactions on dielectrics and electrical insulation, 2015-02, Vol.22 (1), p.35-44

Christen, Thomas

2015

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Correlating the Photoshunt with Charge‐Collection Losses in Organic Solar Cells

Advanced energy materials, 2024-10

2024

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Laser-assisted local metal–organic vapor phase epitaxy

Review of scientific instruments, 2022-11, Vol.93 (11)

2022

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Determination of carrier diffusion length in GaN

Journal of applied physics, 2015-01, Vol.117 (1)

2015

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Self-Healing in Metallized Film Capacitors: Theory of Breakdown Interruption

IEEE transactions on dielectrics and electrical insulation, 2024-08, Vol.31 (4), p.1676-1684

2024

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Phosphor-converted white light from blue-emitting InGaN microrod LEDs

Physica status solidi. A, Applications and materials science, 2016-06, Vol.213 (6), p.1577-1584

2016

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Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

Applied physics letters, 2015-06, Vol.106 (25)

2015

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Drug-sensing hydrogels for the inducible release of biopharmaceuticals

Nature materials, 2008-10, Vol.7 (10), p.800-804

2008

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Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires

Applied physics letters, 2020-09, Vol.117 (13)

2020

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Group III nitride core-shell nano- and microrods for optoelectronic applications

Physica status solidi. PSS-RRL. Rapid research letters, 2013-10, Vol.7 (10), p.800-814

2013

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An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Nanoscopic Insights into InGaN/GaN Core–Shell Nanorods: Structure, Composition, and Luminescence

Nano letters, 2016-09, Vol.16 (9), p.5340-5346

2016

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Phytochrome‐Based Extracellular Matrix with Reversibly Tunable Mechanical Properties

Advanced materials (Weinheim), 2019-03, Vol.31 (12), p.e1806727-n/a

2019

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Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Sputter Epitaxy of AlN and GaN on Si(111)

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Seamless integration of CMOS and microfluidics using flip chip bonding

Journal of micromechanics and microengineering, 2013-03, Vol.23 (3), p.35009-7

2013

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Nitride Semiconductors

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits

Nano letters, 2018-02, Vol.18 (2), p.1175-1179

2018

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Phase Transitions, Phase Coexistence, and Piezoelectric Switching Behavior in Highly Strained BiFeO3 Films

Advanced materials (Weinheim), 2013-10, Vol.25 (39), p.5561-5567

2013

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Demonstration of lateral epitaxial growth of AlN on Si (111) at low temperatures by pulsed reactive sputter epitaxy

Journal of crystal growth, 2021-10, Vol.571, p.126250, Article 126250

2021

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Improvement of the intrinsic time resolving power of the Cologne iron-free orange type electron spectrometers

Nuclear structure analysis using the Orange Spectrometer

Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Probing oxygen vacancy concentration and homogeneity in solid-oxide fuel-cell cathode materials on the subunit-cell level

The effect of injection properties of contacts on the dynamics of unipolar space-charge limited currents

HVDC insulation boundary conditions for modeling and simulation

Correlating the Photoshunt with Charge‐Collection Losses in Organic Solar Cells

Laser-assisted local metal–organic vapor phase epitaxy

Determination of carrier diffusion length in GaN

Self-Healing in Metallized Film Capacitors: Theory of Breakdown Interruption

Phosphor-converted white light from blue-emitting InGaN microrod LEDs

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

Drug-sensing hydrogels for the inducible release of biopharmaceuticals

Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires

Group III nitride core-shell nano- and microrods for optoelectronic applications

An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

Nanoscopic Insights into InGaN/GaN Core–Shell Nanorods: Structure, Composition, and Luminescence

Phytochrome‐Based Extracellular Matrix with Reversibly Tunable Mechanical Properties

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

Sputter Epitaxy of AlN and GaN on Si(111)

Seamless integration of CMOS and microfluidics using flip chip bonding

Nitride Semiconductors

Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits

Phase Transitions, Phase Coexistence, and Piezoelectric Switching Behavior in Highly Strained BiFeO3 Films

Demonstration of lateral epitaxial growth of AlN on Si (111) at low temperatures by pulsed reactive sputter epitaxy

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