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Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

Journal of applied physics, 2017-06, Vol.121 (22)

2017

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Normally-off HfO2-gated diamond field effect transistors

Applied physics letters, 2013-08, Vol.103 (9)

2013

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High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors

Journal of applied physics, 2016-09, Vol.120 (12)

2016

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Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond

Applied physics letters, 2012-12, Vol.101 (25)

2012

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The unbalanced rotating cylinder partially filled with fluid; multiple scales analysis of a forced Korteweg–de Vries–Burgers equation

Journal of engineering mathematics, 2023-06, Vol.140 (1), Article 1

2023

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Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors

Journal of applied physics, 2015-09, Vol.118 (11)

2015

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Annealing effects on hydrogenated diamond NOR logic circuits

Applied physics letters, 2018-04, Vol.112 (15)

2018

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Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Journal of applied physics, 2013-08, Vol.114 (8)

2013

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Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material

Journal of physics. D, Applied physics, 2014-06, Vol.47 (24)

2014

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Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

Applied physics letters, 2014-08, Vol.105 (8)

2014

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Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

Applied physics letters, 2013-01, Vol.102 (3)

2013

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Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction

Journal of applied physics, 2013-03, Vol.113 (12)

2013

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Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

Applied physics letters, 2013-10, Vol.103 (16)

2013

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Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Journal of crystal growth, 2007, Vol.298, p.349-353

2007

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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Applied physics letters, 2006-11, Vol.89 (22), p.221901-221901-2

2006

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Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector

Diamond and related materials, 2010-02, Vol.19 (2), p.205-207

2010

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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Journal of crystal growth, 2007-03, Vol.300 (1), p.141-144

2007

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Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1632-1635

2006

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Study of radiation tolerance of Cu(In,Ga)Se2 detector

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2024-10, Vol.1067, Article 169637

2024

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Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1626-1631

2006

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Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric

Applied physics letters, 2013-03, Vol.102 (11)

2013

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Microstructure in nonpolar m-plane GaN and AlGaN films

Journal of crystal growth, 2007, Vol.298, p.288-292

2007

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High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE

Journal of crystal growth, 2007, Vol.298, p.215-218

2007

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Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy

Physica status solidi. C, 2008-05, Vol.5 (6), p.1559-1561

2008

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An Efficient Photoinduced Iodoperfluoroalkylation of Carbon−Carbon Unsaturated Compounds with Perfluoroalkyl Iodides

Journal of organic chemistry, 2004-10, Vol.69 (20), p.6658-6665

2004

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Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

Normally-off HfO2-gated diamond field effect transistors

High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors

Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond

The unbalanced rotating cylinder partially filled with fluid; multiple scales analysis of a forced Korteweg–de Vries–Burgers equation

Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors

Annealing effects on hydrogenated diamond NOR logic circuits

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material

Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction

Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector

Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Study of radiation tolerance of Cu(In,Ga)Se2 detector

Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric

Microstructure in nonpolar m-plane GaN and AlGaN films

High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE

Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy

An Efficient Photoinduced Iodoperfluoroalkylation of Carbon−Carbon Unsaturated Compounds with Perfluoroalkyl Iodides

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