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Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

ACS applied materials & interfaces, 2020-09, Vol.12 (39), p.43927-43932

2020

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Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

ACS applied materials & interfaces, 2017-12, Vol.9 (49), p.42912-42918

2017

Volltextzugriff (PDF)

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET

Nanotechnology, 2021-04, Vol.32 (16), p.165202-165202

2021

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Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

Nanotechnology, 2016-09, Vol.27 (38), p.385703-385703

2016

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Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires

Nanoscale, 2019-03, Vol.11 (10), p.4219-4225

2019

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Soft-type trap-induced degradation of MoS2 field effect transistors

Nanotechnology, 2018-06, Vol.29 (22), p.22LT01-22LT01

2018

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Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Microelectronic engineering, 2018-11, Vol.199, p.40-44

2018

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Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

Nanotechnology, 2018-02, Vol.29 (6), p.065703-065703

2018

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Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer

Nanotechnology, 2015-04, Vol.26 (14), p.145203-145203

2015

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A sensitive diagnostic assay of rheumatoid arthritis using three-dimensional ZnO nanorod structure

Biosensors & bioelectronics, 2011-10, Vol.28 (1), p.378-385

2011

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Impact of channel width on back biasing effect in tri-gate MOSFET

Microelectronic engineering, 2014-02, Vol.114, p.91-97

2014

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Impedance characterization of nanogap interdigitated electrode arrays fabricated by tilted angle evaporation for electrochemical biosensor applications

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-03, Vol.32 (2)

2014

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Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model

ACS applied materials & interfaces, 2011-08, Vol.3 (8), p.3097-3102

2011

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Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3 film

Nanotechnology, 2013-11, Vol.24 (45), p.455701-455701

2013

Volltextzugriff (PDF)

p–n homo-junction arrays of aligned single walled carbon nanotubes fabricated by selective patterning of polyethyleneimine film

Nanotechnology, 2011-09, Vol.22 (38), p.385302-1-6

2011

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Fabrication of a silica nanocable using hydroxyl-group core-engineered filamentous virus

Journal of nanoscience and nanotechnology, 2013-09, Vol.13 (9), p.6203

2013

Volltextzugriff (PDF)

Brush-Shaped ZnO Heteronanorods Synthesized Using Thermal-Assisted Pulsed Laser Deposition

ACS applied materials & interfaces, 2011-12, Vol.3 (12), p.4682-4688

2011

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Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils

Journal of nanomaterials, 2012-01, Vol.2012

2012

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Efficient characterization and suppression methodology of edge effects for leakage current reduction of sub-40nm DRAM device

2010 International Conference on Microelectronic Test Structures (ICMTS), 2010, p.34-37

2010

Volltextzugriff (PDF)

Fabrication of oxidation-free contacts to nanopatterned Permalloy structures

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-11, Vol.27 (6), p.2487-2489

2009

Volltextzugriff (PDF)

A skin-integrated transparent and stretchable strain sensor with interactive color-changing electrochromic displays

Nanoscale, 2017-06, Vol.9 (22), p.7631-7640

2017

Volltextzugriff (PDF)

Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure

Physica. E, Low-dimensional systems & nanostructures, 2008-04, Vol.40 (6), p.2147-2149

2008

Volltextzugriff (PDF)

Tailoring the Electrical Characteristics of MoS2 FETs through Controllable Surface Charge Transfer Doping Using Selective Inkjet Printing

ACS nano, 2022-04, Vol.16 (4), p.6215-6223

2022

Volltextzugriff (PDF)

The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing

2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013), 2013, p.384-388

2013

Volltextzugriff (PDF)

A 2D material-based floating gate device with linear synaptic weight update

Nanoscale, 2020-12, Vol.12 (48), p.2453-2459

2020

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Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET

Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires

Soft-type trap-induced degradation of MoS2 field effect transistors

Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

Fabrication of controllable and stable In2O3 nanowire transistors using an octadecylphosphonic acid self-assembled monolayer

A sensitive diagnostic assay of rheumatoid arthritis using three-dimensional ZnO nanorod structure

Impact of channel width on back biasing effect in tri-gate MOSFET

Impedance characterization of nanogap interdigitated electrode arrays fabricated by tilted angle evaporation for electrochemical biosensor applications

Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model

Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3 film

p–n homo-junction arrays of aligned single walled carbon nanotubes fabricated by selective patterning of polyethyleneimine film

Fabrication of a silica nanocable using hydroxyl-group core-engineered filamentous virus

Brush-Shaped ZnO Heteronanorods Synthesized Using Thermal-Assisted Pulsed Laser Deposition

Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils

Efficient characterization and suppression methodology of edge effects for leakage current reduction of sub-40nm DRAM device

Fabrication of oxidation-free contacts to nanopatterned Permalloy structures

A skin-integrated transparent and stretchable strain sensor with interactive color-changing electrochromic displays

Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure

Tailoring the Electrical Characteristics of MoS2 FETs through Controllable Surface Charge Transfer Doping Using Selective Inkjet Printing

The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing

A 2D material-based floating gate device with linear synaptic weight update

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